Organic light-emitting diode on indium zinc oxide film prepared by ion assisted deposition dc sputtering system

Preparation and characterization of highly conducting and transparent Al doped CdO thin films by pulsed laser deposition

“…The root mean square value of surface roughness was found to be 0.80 nm and 0.76 nm for the films grown at room temperature and 600°C, respectively. These values are superior to the commercially available indium tin oxide films ($4 nm) [26]. The peak to valley roughness for the films grown at room temperature and 600°C are 17.5 nm and 16.9 nm, respectively.…”

Effect of substrate temperature on opto-electrical properties of Nb-doped In2O3 thin films

“…The surface of the film is seen to be very smooth, which is believed to be due to the formation of a solid solution with a crystal structure. The root mean square (rms) value of surface roughness was found to be 2.07 nm, which is much superior to the commercially available indium tin oxide films ($4 nm) [22]. The peak to valley roughness is a very important parameter for optoelectronic devices [23].…”

Characteristics of Y2O3-doped indium zinc oxide films grown by radio frequency magnetron co-sputtering system

“…Moreover several other advantages of thin IZO film, i.e. good conductivity [10,11], high optical transparency [12] and low deposition temperature [13,14] have been reported. From industrial viewpoint, another attractions of amorphous IZO thin films including excellent surface smoothness [14] and relatively high etch rate have been suggested [13].…”