Organic field-effect transistor circuits using atomic layer deposited gate dielectrics patterned by reverse stamping

Choi, Seong Hee; Fuentes-Hernández, Canek; Yun, Mi Jin; Dindar, Amir; Khan, Talha M.; Wang, Chengyin; Kippelen, Bernard

doi:10.1016/j.orgel.2014.10.022

Organic Electronics

2014

DOI: 10.1016/j.orgel.2014.10.022

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Organic field-effect transistor circuits using atomic layer deposited gate dielectrics patterned by reverse stamping

Seong Hee Choi¹,

Canek Fuentes-Hernández²,

Mi Jin Yun³

et al.

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Cited by 5 publications

(9 citation statements)

References 34 publications

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“…The TIPS-pentacene and PTAA blend was dissolved in 1, 2, 3, 4-Tetrahydronaphthalene anhydrous, 99%, (Sigma-Aldrich) at a concentration of 30 mg/mL. A 70 nm-thick layer of TIPS-pentacene and PTAA was spin-coated onto source and drain electrodes at 500 rpm for 10 s (acceleration of 500 rpm/s) and ramped to 2000 rpm for 20 s (acceleration of 1000 rpm/s) . Spin-coated films were then annealed at 100 °C for 15 min on a hot plate in a N 2 -filled glovebox.…”

supporting

confidence: 64%

“…We note that refractive index values of materials and layer-thicknesses in the OFETs were extracted from modeling of spectroscopic ellipsometry data acquired using a J.A. Woollam M-2000UI ellipsometer as described in ref .…”

mentioning

confidence: 99%

“…However, OFETs with a top-gate geometry have been shown to display improved environmental stability over bottom-gate OFETs even in the absence of encapsulation layers because the top-gate gate dielectric also acts as an environmental barrier. Indeed, we and others have demonstrated that properly engineered gate dielectric layers can yield n- or p-channel top-gate OFETs, , OFET-based sensors, and circuits with unprecedented long-term operational and environmental stability; even under immersion over extended periods of time in aqueous environments. The bilayer gate dielectric in such OFETs is comprised of an amorphous fluoro-polymer layer (CYTOP) and a layer of Al 2 O 3 grown by atomic layer deposition (ALD).…”

mentioning

confidence: 99%

“…A layer of CYTOP was spin-coated on top of the organic semiconducting layer at 3000 rpm for 60 s (acceleration of 10 000 rpm/s) to yield a c.a. 35 nm-thick layer . Samples were then annealed at 100 °C for 10 min on a hot plate in a N 2 -filled glovebox.…”

mentioning

confidence: 99%

“…100 nm-thick Ag or Au gate electrodes were then deposited through a shadow mask in a Kurt J. Lesker SPECTROS thermal evaporator with initial pressures below 1.0 × 10 –6 Torr and at an average deposition rate of 1.0 Å/s. Reference OFETs with CYTOP/Al 2 O 3 bilayer gate dielectric were also fabricated as previously reported . We note that refractive index values of materials and layer-thicknesses in the OFETs were extracted from modeling of spectroscopic ellipsometry data acquired using a J.A.…”

mentioning

confidence: 99%

See 4 more Smart Citations

Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition

Wang

Fuentes-Hernández

Yun

et al. 2016

ACS Appl. Mater. Interfaces

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We report on top-gate OFETs with a bilayer gate dielectric comprising an AlO /HfO nanolaminate layer grown by atomic layer deposition and an amorphous fluoro-polymer layer (CYTOP). Top-gate OFETs display average carrier mobility values of 0.9 ± 0.2 cm/(V s) and threshold voltage values of -1.9 ± 0.5 V and high operational and environmental stability under different environmental conditions such as damp air at 50 °C (80% relative humidity) and prolonged immersion in water at a temperature up to 95 °C.

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supporting

confidence: 64%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition

Wang

Fuentes-Hernández

Yun

et al. 2016

ACS Appl. Mater. Interfaces

Self Cite

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Recent Progress on High‐Capacitance Polymer Gate Dielectrics for Flexible Low‐Voltage Transistors

Nketia‐Yawson

Noh

2018

Adv Funct Materials

156

114

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The gate dielectric layer is an essential element of field‐effect transistors (FETs), large area integrated circuits, and various application electronics. Beyond basic insulation between the semiconductor layer and gate electrode, FET performance largely depends on the capacitance of the chosen insulator layer properties. Recent functional devices developments require new functionalities, such as high mechanical flexibility and stretchability in addition to basic insulating and physical properties. This review focuses on recent developments of high‐capacitance polymer gate dielectric materials and their application for low‐voltage flexible FETs. The fundamental principles and components of transistors are discussed briefly, then the underlying concepts for gate dielectrics and the mechanisms for polymer dielectric properties, such as capacitance control, leakage current formation in dielectric polymer films, and patternability, are described. Strategic approaches to achieve high capacitance based on low‐k dielectric materials, and the development and use of high‐capacitance polymers and hybrid polymer gate dielectrics in the context of emerging transistors on flexible substrates are also discussed.

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Recent Progress in Fluorinated Dielectric‐Based Organic Field‐Effect Transistors and Applications

Geng

Lei

et al. 2023

Advanced Sensor Research

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Fluorinated dielectric‐based organic field effect transistors (OFETs) have garnered lots of attention due to some visible superiorities of the incorporation of fluorine functional groups into dielectrics, such as the hydrophobicity, chemical inertness, and low polarizability of the C─F bond for effectively impeding the charge‐trapping process and improving carrier mobility. With the efforts of material design and device optimization, high‐performance multifunctional devices using fluorinated dielectrics have been rapidly developed with the mobility exceeding 8 cm2 V−1 s−1 and the operating voltage lower than −4 V, which provides a promising opportunity for applications in memory devices, wearable electronics, and flexible sensors. On this basis, this review summarizes the recent development of fluorinated dielectric‐based OFETs and OFETs‐based organic optoelectronic devices. In addition, a brief perspective of fluorinated dielectric‐based OFETs and their future challenges is also presented.

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Organic field-effect transistor circuits using atomic layer deposited gate dielectrics patterned by reverse stamping

Cited by 5 publications

References 34 publications

Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition

Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition

Recent Progress on High‐Capacitance Polymer Gate Dielectrics for Flexible Low‐Voltage Transistors

Recent Progress in Fluorinated Dielectric‐Based Organic Field‐Effect Transistors and Applications

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