Organic Field Effect Transistor Based on Adaptive Neuro-Fuzzy Inference System

Abstract

Organic Field-Effect Transistors (OFETs) attract much interest recently and their proficiency and hence applications are being enhanced increasingly. The device simulation was performed using finite element two dimensional drift-diffusion simulations, the results obtained are compared with experiments data and a good match has been observed between them. This paper introduces a method for modeling the OFET based on Adaptive Network Fuzzy Inference System (ANFIS) approach, the required data for training of ANFIS has been obtained using Atlas 2D device simulator. Finally, we imported the ANFIS model in a circuit simulator like PSPICE, simulation results of the developed ANFIS subcircuit have indicated that the proposed fuzzy logic based approach model is suitable to be incorporated in PSPICE-like tools for OFET circuits simulation.