Organic acid-based wet etching behaviors of Ga-doped ZnO films sputter-deposited at different substrate temperatures

Lee, Dong-Kyoon; Bang, Jungsik; Park, Mungi; Lee, Jae-Ho; Yang, Heesun

doi:10.1016/j.tsf.2010.01.063

Cited by 11 publications

(3 citation statements)

References 22 publications

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“…Among them, Ga has recognized as the most promising candidate due to its chemical stability and strong resistant to oxidation as well as matched ionic size and covalent radii of 0.62 Å and 1.26 Å with Zn (0.60 Å, 1.25 Å), which ensure the smaller lattice distortion [7][8][9] and it has been demonstrated that a low resistivity of $10 À4 O cm can be realized from the Ga-doped ZnO films, which is comparable with that of ITO [10,11]. While, TCO materials with a wider band-gap for application in optoelectronic devices operating in the ultra violet (UV) regime are strongly required, as an operating regime of optoelectronic device shifts to shorter wavelength recently [12,13] and thus, band-gap widening of the ZnO film is key issue, which should be resolved for employment of ZnO-based TCO in UV range optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Comparative study of group-II alloying effects on physical property of ZnGaO transparent conductive films prepared by RF magnetron sputtering

Lee

Cuong

Jeong

et al. 2015

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Comparative study of group-II alloying effects on physical property of ZnGaO transparent conductive films prepared by RF magnetron sputtering

Lee

Cuong

Jeong

et al. 2015

Journal of Alloys and Compounds

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“…The well-known properties, such as the wide direct band-gap (3.3 eV), large exciton binding energy (60 meV), low cost, environmental friendly and abundance, make it a very interesting material. For different applications, ZnO can be used in various forms and morphologies [7][8][9][10][11][12][13]. Syntheses of powdered form ZnO using wet chemistry methods have already been widely reported [14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Structural study and phase transition investigation in a simple synthesis of porous architected-ZnO nanopowder

Shang

Barnabé

2013

Materials Characterization

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In this work, zinc oxide powder with a rectangular-shaped porous architecture, made of numerous spherical nanometric particles, was obtained. A simple precipitation/decomposition procedure was used comprising a zinc oxalate intermediate, obtained from zinc sulfate and oxalic acid without any additives. Detailed studies on zinc oxalate dehydration, decomposition and zinc oxide formation, were carried out using in-situ temperature X-ray diffraction and thermogravimetric analysis. During the investigation, the temperature dependence of particle sizes, lattice parameters and crystal structures of ZnC 2 O 4 •2H 2 O, ZnC 2 O 4 and ZnO nanopowders were analyzed from room temperature to 450°C. Structural transitions were also discussed. The structure and morphology of the as-prepared ZnO nanopowder were investigated by electron microscopy and compared to the crystalline rectangular shape of ZnC 2 O 4 •2H 2 O. The calcination temperature, counter ion and precipitate agent were found to be related to the product's shape and diameter. Spherical ZnO nanoparticles with diameters of less than 20 nm and a maximum specific surface of 53 m 2 /g were obtained using this method.

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“…The incompletely deprotonated citric acid species that entered the pores would produce additional hydronium ions, causing a rapid lateral etching reaction and consequently widening the pores aggressively. [23][24][25] The transmittance of the modulated surface of the ZnO layers etched with oxalic, formic, and citric acid over 1-5 min is shown in Fig. 3.…”

mentioning

confidence: 99%

Morphology Effect of the ZnO Surface via Organic Etchants for Photon Extraction in III-Nitride Emitters

Kim

Shin

et al. 2016

ECS J. Solid State Sci. Technol.

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We demonstrate that the morphology effect on the ZnO surface using organic acids significantly improves the photon extraction efficiency of III-nitride emitters. Oxalic (C 2 H 2 O 4 ), citric (C 6 H 8 O 7 ), and formic (CH 2 O 2 ) acids were used for modulating the nanostructured surface of the ZnO layer with various shapes, including random nanoblocks, nanoholes, and nanorods. The transmittance of the nanostructured ZnO layer fabricated with formic acid for 3 min was 91% at 450 nm wavelength. The optical output power intensities of the emitters with the nanostructured ZnO surface layer were enhanced by 22.14%, 30.58%, and 22.46% with oxalic, formic, and citric acid, respectively, compared with the emitter with the flat ZnO layer.

show abstract

Organic acid-based wet etching behaviors of Ga-doped ZnO films sputter-deposited at different substrate temperatures

Cited by 11 publications

References 22 publications

Comparative study of group-II alloying effects on physical property of ZnGaO transparent conductive films prepared by RF magnetron sputtering

Comparative study of group-II alloying effects on physical property of ZnGaO transparent conductive films prepared by RF magnetron sputtering

Structural study and phase transition investigation in a simple synthesis of porous architected-ZnO nanopowder

Morphology Effect of the ZnO Surface via Organic Etchants for Photon Extraction in III-Nitride Emitters

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