Orders of magnitude reduction in the thermal conductivity of polycrystalline diamond through carbon, nitrogen, and oxygen ion implantation

Scott, Ethan A.; Hattar, Khalid Mikhiel; Braun, Jeffrey L.; Rost, Christina M.; Gaskins, John T.; Bai, Tingyu; Wang, Yekan; Ganski, Claire; Goorsky, Mark S.; Hopkins, Patrick E.

doi:10.1016/j.carbon.2019.09.076

Cited by 32 publications

(13 citation statements)

References 57 publications

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“…Thus, all of the implant-induced strain is removed from the samples annealed at 800 °C in N 2 . This is similar to what has been observed in other implanted materials, 27,28 particularly those used for exfoliation. 30,31 The fringe period also corresponds to ∼140 nm in agreement with the TEM analysis.…”

Section: ■ Introductionsupporting

confidence: 89%

“…The measured thermal conductivity of the monocrystalline ( 2 01) β-Ga 2 O 3 thin films (2.9 W/m·K) is more than 4 times lower than the bulk counterpart (13.3 W/m·K) . The significant reduction in thermal conductivity is due to the film boundary scattering and the implantation-induced strain in the thin films, which will be discussed in detail later . The thermal conductivity of the β-Ga 2 O 3 thin films increases more than twice after annealing in N 2 at 800 °C.…”

Section: Resultsmentioning

confidence: 93%

“…26 The significant reduction in thermal conductivity is due to the film boundary scattering and the implantation-induced strain in the thin films, which will be discussed in detail later. 27 The thermal conductivity of the β-Ga 2 O 3 thin films increases more than twice after annealing in N 2 at 800 °C. Annealing reduces the implantation-induced strain in the thin films.…”

Section: ■ Introductionmentioning

confidence: 99%

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Thermal Transport across Ion-Cut Monocrystalline β-Ga₂O₃ Thin Films and Bonded β-Ga₂O₃–SiC Interfaces

Cheng

You

et al. 2020

ACS Appl. Mater. Interfaces

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The ultrawide band gap, high breakdown electric field, and large-area affordable substrates make β-Ga 2 O 3 promising for applications of next-generation power electronics, while its thermal conductivity is at least 1 order of magnitude lower than other wide/ultrawide band gap semiconductors. To avoid the degradation of device performance and reliability induced by the localized Joule-heating, proper thermal management strategies are essential, especially for high-power high-frequency applications. This work reports a scalable thermal management strategy to heterogeneously integrate wafer-scale monocrystalline β-Ga 2 O 3 thin films on high thermal conductivity SiC substrates by the ion-cutting technique and room-temperature surface-activated bonding technique. The thermal boundary conductance (TBC) of the β-Ga 2 O 3 −SiC interfaces and thermal conductivity of the β-Ga 2 O 3 thin films were measured by time-domain thermoreflectance to evaluate the effects of interlayer thickness and thermal annealing. Materials characterizations were performed to understand the mechanisms of thermal transport in these structures. The results show that the β-Ga 2 O 3 −SiC TBC values are reasonably high and increase with decreasing interlayer thickness. The β-Ga 2 O 3 thermal conductivity increases more than twice after annealing at 800 °C because of the removal of implantation-induced strain in the films. A Callaway model is built to understand the measured thermal conductivity. Small spot-to-spot variations of both TBC and Ga 2 O 3 thermal conductivity confirm the uniformity and high quality of the bonding and exfoliation. Our work paves the way for thermal management of power electronics and provides a platform for β-Ga 2 O 3 -related semiconductor devices with excellent thermal dissipation.

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Section: ■ Introductionsupporting

confidence: 89%

Section: Resultsmentioning

confidence: 93%

Section: ■ Introductionmentioning

confidence: 99%

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Thermal Transport across Ion-Cut Monocrystalline β-Ga₂O₃ Thin Films and Bonded β-Ga₂O₃–SiC Interfaces

Cheng

You

et al. 2020

ACS Appl. Mater. Interfaces

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“…The simplest form for the thermal wave penetration for the TDTR geometry is given as 𝐿 KL = H𝐷/(𝜋𝑓) , where D is the diffusivity of the substrate and f is the pump modulation frequency [406,569]. TDTR has been used to study a variety of ion irradiated materials including nuclear fuel [570], nuclear fuel cladding [571], silicon carbide [572] metallic multi-layers [571], silicon [571,573], sapphire [574], and diamond [575] across orders of magnitude in thermal conductivity. MTR, also referred to as spatial domain or beam-offset thermoreflectance [576,577,578,579,580,581], has been used in the majority of studies of ion irradiated actinide oxides and their surrogates.…”

Section: Experimental Measurement Of Thermal Conductivitymentioning

confidence: 99%

Thermal Energy Transport in Oxide Nuclear Fuel

et al. 2021

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To efficiently capture the energy of the nuclear bond, advanced nuclear reactor concepts seek solid fuels that must withstand unprecedented temperature and radiation extremes. In these advanced fuels, thermal energy transport under irradiation is directly related to reactor performance as well as reactor safety. The science of thermal transport in nuclear fuel is a grand challenge due to both computational and experimental complexities. Here, we provide a comprehensive review of thermal transport research on two actinide oxides: one currently in use in commercial nuclear reactors, uranium dioxide (UO2), and one advanced fuel candidate material, thorium dioxide (ThO2). In both materials, 5Concluding Remarks .

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“…Irradiation of diamond with ions of C 3+ , N 3+ , and O 3+ has been demonstrated to yield orders-of-magnitude reductions in thermal conductivity, even with mass impurity concentrations much lower than 1%. 18,19 In contrast to pure crystalline carbon, hydrogenated amorphous carbon is unique in that exposure to irradiation can yield enhanced electrical and mechanical properties. 20−22 The resultant reduction in hydrogen content reduces the degree of hydrogen-terminated bonds.…”

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confidence: 99%

Thermal Conductivity Enhancement in Ion-Irradiated Hydrogenated Amorphous Carbon Films

et al. 2021

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Amorphous solids are traditionally assumed to set the lower bound to the vibrational thermal conductivity of a material due to the high degree of structural disorder. Here, were demonstrate the ability to increase the thermal conductivity of amorphous solids through ion irradiation, in turn, altering the bonding network configuration. We report on the thermal conductivity of hydrogenated amorphous carbon implanted with C+ ions spanning fluences of 3 × 1014–8.6 × 1014 cm–2 and energies of 10–20 keV. Time-domain thermoreflectance measurements of the films’ thermal conductivities reveal significant enhancement, up to a factor of 3, depending upon the preirradiation composition. Films with higher initial hydrogen content provide the greatest increase, which is complemented by an increased stiffening and densification from the irradiation process. This enhancement in vibrational transport is unique when contrasted to crystalline materials, for which ion implantation is known to produce structural degradation and significantly reduced thermal conductivities.

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Orders of magnitude reduction in the thermal conductivity of polycrystalline diamond through carbon, nitrogen, and oxygen ion implantation

Cited by 32 publications

References 57 publications

Thermal Transport across Ion-Cut Monocrystalline β-Ga₂O₃ Thin Films and Bonded β-Ga₂O₃–SiC Interfaces

Thermal Transport across Ion-Cut Monocrystalline β-Ga₂O₃ Thin Films and Bonded β-Ga₂O₃–SiC Interfaces

Thermal Energy Transport in Oxide Nuclear Fuel

Thermal Conductivity Enhancement in Ion-Irradiated Hydrogenated Amorphous Carbon Films

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Orders of magnitude reduction in the thermal conductivity of polycrystalline diamond through carbon, nitrogen, and oxygen ion implantation

Cited by 32 publications

References 57 publications

Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3–SiC Interfaces

Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3–SiC Interfaces

Thermal Energy Transport in Oxide Nuclear Fuel

Thermal Conductivity Enhancement in Ion-Irradiated Hydrogenated Amorphous Carbon Films

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Product

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Thermal Transport across Ion-Cut Monocrystalline β-Ga₂O₃ Thin Films and Bonded β-Ga₂O₃–SiC Interfaces

Thermal Transport across Ion-Cut Monocrystalline β-Ga₂O₃ Thin Films and Bonded β-Ga₂O₃–SiC Interfaces