Ordering of Carbon Atoms in Free Martensite Crystals and When Enclosed in Elastic Matrix

Mirzayev, D. A.; Мирзоев, А. А.; Chirkov, P. V.

doi:10.1007/s11661-015-3258-9

Cited by 6 publications

(2 citation statements)

References 10 publications

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“…A few years later, he proposed a more fundamental approach based on static concentration waves and microscopic elastic theory [4]. These models, and others [5][6][7][8], enable us to define the critical temperature T c of carbon ordering as…”

Section: Introductionmentioning

confidence: 99%

Temperature hysteresis of the order-disorder transition in carbon-supersaturated α-Fe

et al. 2017

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Although many works have been devoted to the order-disorder transition in carbon-supersaturated α-Fe, all seem to have overlooked the temperature hysteresis phenomenon occurring around the critical temperature. It is shown, from a mean-field model based on the elasticity theory of point defects, that the origin of the temperature hysteresis is thermodynamic. As a consequence, both the critical temperature and carbon concentration for the order-disorder transition can be defined upon heating and cooling. The results obtained were successfully compared to molecular dynamics simulations, and are evidence that the transition is of first order and that linear elasticity is the predominant source of the thermodynamics of the Fe-C solid solutions.

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Section: Introductionmentioning

confidence: 99%

Temperature hysteresis of the order-disorder transition in carbon-supersaturated α-Fe

et al. 2017

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“…One of the main tendencies in modern semiconductor technology is development of growth methods to produce thin layers and heterostructures on large substrates [1,2]. Molecular-beam epitaxy is the most suitable technique to fabricate such structures [3][4][5][6]. Despite of the high quality of the structures, there are some drawbacks which make this method not suitable for mass production [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Features of Zone Thermal Recrystallization of Germaniun Layers Grown on Silicon Substrates from a Discrete Source

Chebotarev

Yatsenko

Lunin

2017

SSP

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We have proposed and investigated a new technique for growing thin uniform layers onto a large semiconductor substrates. The method uses the system of hexagonally arranged round local sources filled with liquid growth substance. The growth substance evaporates on very close substrate, which is removed from the discrete source by about 1 mm. In these conditions vapor pressure of the residual gases is reduced by two orders of magnitude. It is found that to obtain uniform thickness layers by the proposed technique it is strongly necessary that the distance between the discrete source and the substrate will be greater than the critical thickness lcr. It is shown that this parameters lcr increases with the increasing of radius of local sources and the distance between the local sources. For example, to achieve uniformity of better than 97% the critical thickness must be equal to lcr = 1.2 mm for a hexagonal arranged system of round local sources with the radius of r = 0.75 mm and the distance between the sources of h = 0.5 mm.

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Ferrite, martensite and supercritical iron: A coherent elastochemical theory of stress-induced carbon ordering in steel

Maugis

2018

Acta Materialia

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Ordering of Carbon Atoms in Free Martensite Crystals and When Enclosed in Elastic Matrix

Cited by 6 publications

References 10 publications

Temperature hysteresis of the order-disorder transition in carbon-supersaturated α-Fe

Temperature hysteresis of the order-disorder transition in carbon-supersaturated α-Fe

Features of Zone Thermal Recrystallization of Germaniun Layers Grown on Silicon Substrates from a Discrete Source

Ferrite, martensite and supercritical iron: A coherent elastochemical theory of stress-induced carbon ordering in steel

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