Order-of-magnitude enhancement of direct-gap photoluminescence from patterned Ge epitaxial layers on Si induced by wet chemical treatment

Yako, Motoki; Ishikawa, Yasuaki

doi:10.7567/ssdm.2018.h-1-03

Cited by 1 publication

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“…In Sect. 3, the enhancement of PL peak intensity by 83 times, obtained after CH 3 COOH/HNO 3 /HF/I 2 treatment, 26) is described in detail, and the mechanism to induce such a large PL enhancement is discussed. Sect.…”

Section: Introductionmentioning

confidence: 98%

“…We have also reported a PL enhancement for Ge mesa structures selectively grown on Si after a wet chemical treatment in a CH 3 COOH/HNO 3 /HF/I 2 solution to induce a preferential etching of Ge near the defectrich Ge/Si interfaces. 26) In the present article, PL intensities around 1.55 μm due to the direct transitions in Ge epitaxial layers on Si are studied toward Ge lasers. In particular, surface/interface recombination velocities are estimated for several different Ge interfaces, and the PL enhancement after the CH 3 COOH/HNO 3 /HF/I 2 treatment 26) is described in detail.…”

Section: Introductionmentioning

confidence: 99%

“…26) In the present article, PL intensities around 1.55 μm due to the direct transitions in Ge epitaxial layers on Si are studied toward Ge lasers. In particular, surface/interface recombination velocities are estimated for several different Ge interfaces, and the PL enhancement after the CH 3 COOH/HNO 3 /HF/I 2 treatment 26) is described in detail. In Sect.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Impact of interface recombination on direct-gap photoluminescence from Ge epitaxial layers on Si

Yako

Higashitarumizu

Ishikawa

2019

Jpn. J. Appl. Phys.

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Direct-gap photoluminescence (PL) at the wavelength around 1.55 μm from Ge epitaxial layers on Si is studied toward Ge lasers in Si photonics. Comparing the PL intensities under two different wavelengths of excitation lasers, non-radiative interface recombination velocities are estimated to be as large as 105 cm s−1 at Ge/Si and Ge/air interfaces, whereas that at the Ge/GeO2 interface is estimated to be as small as 103–104 cm s−1, which is required for the threshold current density in Ge lasers as low as 10 kA cm−2. In order to remove the effect of defect-rich Ge/Si hetero-interfaces with a high recombination velocity, a wet chemical treatment in a CH3COOH/HNO3/HF/I2 solution is examined. A preferential etching of Ge at Ge/Si interfaces leads to an enhancement of the PL peak intensity by 83 times. A suppression of non-radiative recombination at the Ge/Si interface should contribute to this enhancement, and such a suppression plays a critical role for Ge lasers.

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%