Orbital Freezing and Orbital Glass State in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">F</mml:mi><mml:mi mathvariant="normal">e</mml:mi><mml:msub><mml:mrow><mml:mi mathvariant="normal">C</mml:mi><mml:mi mathvariant="normal">r</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">S</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:math>

Fichtl, R.; Tsurkan, V.; Lunkenheimer, P.; Hemberger, J.; Fritsch, V.; Nidda, H.-A. Krug von; Scheidt, E.‐W.; Loidl, A.

doi:10.1103/physrevlett.94.027601

Cited by 124 publications

(80 citation statements)

References 28 publications

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“…The fact that in these systems, either by frustration or by disorder, orbital order can indeed be easily suppressed, has been documented in Ref. 9, where a low-temperature orbital glass state has been identified. In FeSc 2 S 4 orbital and spin order are suppressed almost down to zero temperature and hence, it represents one of the rare examples of a spin-orbital liquid (SOL).…”

Section: Introductionmentioning

confidence: 95%

Spin-orbiton and quantum criticality inFeSc2S4

et al. 2015

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In FeSc 2 S 4 spin-orbital exchange competes with strong spin-orbit coupling, suppressing long-range spin and orbital order and, hence, this material represents one of the rare examples of a spin-orbital liquid ground state. Moreover, it is close to a quantum-critical point separating the ordered and disordered regimes. Using THz and FIR spectroscopy we study low-lying excitations in FeSc 2 S 4 and provide clear evidence for a spin-orbiton, an excitation of strongly entangled spins and orbitals. It becomes particularly well pronounced upon cooling, when advancing deep into the quantum-critical regime. Moreover, indications of an underlying structureless excitation continuum are found, a possible signature of quantum criticality.

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Section: Introductionmentioning

confidence: 95%

Spin-orbiton and quantum criticality inFeSc2S4

et al. 2015

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“…We speculate that the tunnelling effect between FMM domains in phase-separated PCSMO film is also responsible for the dielectric relaxation processes especially at low temperature region. For the tunnelling process, the time constant τ T is nearly temperature independent at low temperatures 28 . A fit to the data, combining a thermal-activated model and a tunnelling contribution by τ − 1 = τ T − 1 + τ 0 − 1 exp( − E a /k B T), has been added to the inset of Fig.…”

Section: Discussionmentioning

confidence: 99%

Dynamics of multiple phases in a colossal-magnetoresistive manganite as revealed by dielectric spectroscopy

et al. 2012

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Electronic phase separation is one of the key features in correlated electron oxides. The coexistence and competition of multiple phases give rise to gigantic responses to tiny stimuli producing dramatic changes in magnetic, transport and other properties of these compounds. To probe the physical properties of each phase separately is crucial for a comprehensive understanding of phase separation phenomena and for designing their device functions. Here we unravel, using a unique p-n junction configuration, dynamic properties of multiple phases in manganite thin films. The multiple dielectric relaxations have been detected and their corresponding multiple phases have been identified, while the activation energies of dielectric responses from different phases were extracted separately. Their phase evolutions with changing both temperature and applied magnetic field have been demonstrated by dielectric response. These results provide a guideline for exploring the electronic phase separation phenomena in correlated electron oxides.

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“…At some temperatures the coupling might be related to ordered and disordered magnetic sublattices, while at higher temperatures only disordered moments can enforce remnant bulk magnetization. Coupling of molecular or cluster orbital moments to the lattice of localized spins of transition metal ions might be appropriate for glass states in antiferromagnetic semiconductors 17,18,19 . Another direction for the GL framework development are amorphous polymers 10,13 with itinerant electrons and anomalous negative magnetization.…”

Section: Antiferromagnetic Systems and Magnetic Multicouplingmentioning

confidence: 99%

Low-field memory and negative magnetization in semiconductors and polymers

Bulyzhenkov

Lamarche

2005

Phys. Rev. B

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Ginzburg-Landau bulk magnetization of itinerant electrons can provide a negative effective field in the Weiss model by coupling to localized magnetic moments. The coupling enforces remnant magnetization, which can be negative or positive depending on the sample magnetic history. Stable magnetic susceptibility of coupled nonequilibrium subsystems with magnetization reversal is always positive. Gauss-scale fields could be expected for switching between negative and positive remnant moments in semiconductors with coupling at ambient temperatures. Negative magnetization in ultra-high conducting polymers is also discussed within the developed framework.

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Orbital Freezing and Orbital Glass State inFeCr2S4

Cited by 124 publications

References 28 publications

Spin-orbiton and quantum criticality inFeSc2S4

Spin-orbiton and quantum criticality inFeSc2S4

Dynamics of multiple phases in a colossal-magnetoresistive manganite as revealed by dielectric spectroscopy

Low-field memory and negative magnetization in semiconductors and polymers

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