2021
DOI: 10.1039/d1ta01273h
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Orbital chemistry of high valence band convergence and low-dimensional topology in PbTe

Abstract: The tight-binding method provides insight into the orbital interactions that lead to the exceptional thermoelectric performance of PbTe. Using this framework, we can predict strategies to achieve enhanced thermoelectric performance in new alloys.

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Cited by 16 publications
(24 citation statements)
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“…The thermoelectric performance of Tl-doped PbTe alloyed with PbSe or PbS was investigated by Jaworski et al The ZT parameters estimated for the alloys were somewhat lower compared to the only Tl-doped PbTe in ref and in this work. The last property can be well explained using the recently proposed by Brod and Snyder paradigm . As the s–p splitting energy decreases from S to Se and from Se to Te, tellurium is a better choice for high thermoelectric performance than Se or S at T < 700 K (in the case when the L band is higher than the ∑ band) in p -type PbTe due to higher band degeneracy.…”
Section: Resultsmentioning
confidence: 95%
“…The thermoelectric performance of Tl-doped PbTe alloyed with PbSe or PbS was investigated by Jaworski et al The ZT parameters estimated for the alloys were somewhat lower compared to the only Tl-doped PbTe in ref and in this work. The last property can be well explained using the recently proposed by Brod and Snyder paradigm . As the s–p splitting energy decreases from S to Se and from Se to Te, tellurium is a better choice for high thermoelectric performance than Se or S at T < 700 K (in the case when the L band is higher than the ∑ band) in p -type PbTe due to higher band degeneracy.…”
Section: Resultsmentioning
confidence: 95%
“…There is a flat band between CBM-X 3 (contributed by the d orbital of the Y atom) and Γ point (Δ E = 0.03 eV), with the CBM-X 2 (contributed by the d orbital of the X atom) close in energy (Δ E = 0.25 eV), which should have a complex Fermi surface with a high band degeneracy. 42,43 The orbital diversity of conduction band edges indicates that larger degeneracy can be achieved by engineering the energy offset.…”
Section: Resultsmentioning
confidence: 99%
“…The TB solution for the energy levels in a diatomic molecule can be a useful tool for understanding complex electronic structures. [ 69 ] Consider the interaction between two orbitals (1 and 2) that are members of the same symmetry representation. The expressions for the resulting bonding (ε − ) and anti‐bonding (ε + ) energy levels are given in Equation ().…”
Section: Avoided Crossings In the Hh Electronic Structurementioning
confidence: 99%
“…In order to extend this simple diatomic molecule model to complex crystal structures, we can adjust the on‐site energies and hopping (interaction) parameters so that they are effective on‐site energies ((E1(k) and (E2(k)) and interaction parameters (V(k)), which are a function of the k ‐vector. [ 69 ] That is, we can write Equation () as a function of k , as shown in Equation (), in order to describe more complex electronic dispersions with a simple diatomic molecule TB model: ε±=12(E1+E2)±12(E1E2)2+4V2 ε±(k)=12(E1(k)+E2(k))±12(E1(k)E2(k))2+4V2(k) …”
Section: Avoided Crossings In the Hh Electronic Structurementioning
confidence: 99%