Orange light generation from a PPKTP waveguide end pumped by a cw quantum-dot tunable laser diode

Fedorova, Ksenia A.; Cataluna, Maria Ana; Battle, Philip; Kaleva, Christopher M.; Krestnikov, I. L.; Livshits, D.A.; Rafailov, Edik U.

doi:10.1007/s00340-010-4317-y

Cited by 25 publications

(25 citation statements)

References 6 publications

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“…This second−harmonic generated radiation was deemed suitable for an Yb optical atomic clock, where the narrow clock transition lies at 578 nm, with the added benefits of reduction in size and cost through use of a laser diode. A higher efficiency of 10.5% was later demonstrated by using a waveguided periodically−poled KTP crystal, end−pumped by a tunable QD laser (150 nm tunability around 1213 nm) [13], resulting in frequency doubling into the orange spectral range (612.9 nm), with a temperature−controlled tunability of 3.4 nm [13]. The use of a waveguided periodically−poled LiNbO 3 crystal was also used to significantly boost the efficiency of 578 nm yellow light generation with a QD tunable laser without an enhancement cavity, resulting in yellow light with an output power slightly over 10 mW and a conversion efficiency of around 30% [70].…”

Section: Applicationsmentioning

confidence: 99%

“…This review will focus on the achievements in the development of broadly−tunable edge−emitting QD lasers in this spectral region, based on InAs/GaAs materials. Such broadly−tunable lasers have a wide range of applications including spectroscopy [12], frequency doubling [13] and biomedical imaging modalities such as optical coherence tomography [14], as the wavelength range between 1-1.3 μm overlaps with regions of deep tissue penetration with minimal scattering. For this reason, QD lasers are also extremely promising laser sources for multiphoton microscopy, as recently demonstrated [15].…”

Section: Introductionmentioning

confidence: 99%

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Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

White

Cataluna

2015

Photonics

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Wavelength−tunable semiconductor quantum−dot lasers have achieved impressive performance in terms of high−power, broad tunability, low threshold current, as well as broadly tunable generation of ultrashort pulses. InAs/GaAs quantum−dot−based lasers in particular have demonstrated significant versatility and promise for a range of applications in many areas such as biological imaging, optical fiber communications, spectroscopy, THz radiation generation and frequency doubling into the visible region. In this review, we cover the progress made towards the development of broadly−tunable quantum−dot edge−emitting lasers, particularly in the spectral region between 1.0-1.3 µm. This review discusses the strategies developed towards achieving lower threshold current, extending the tunability range and scaling the output power, covering achievements in both continuous wave and mode−locked InAs/GaAs quantum−dot lasers. We also highlight a number of applications which have benefitted from these advances, as well as emerging new directions for further development of broadly−tunable quantum−dot lasers.

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Section: Applicationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

White

Cataluna

2015

Photonics

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“…These power levels meet the requirements for direct applications of lasers in treatment of vascular diseases and for pumping of Ti:sapphire lasers [31], where multi-Watt-level powers are necessary. Frequency doubled diode lasers have also been demonstrated in the yellow-orange spectral range although at significantly lower output power [32]- [34]. The achieved power levels are mainly limited by the available output power from the tapered diode lasers.…”

Section: Introductionmentioning

confidence: 99%

Power Scaling of Nonlinear Frequency Converted Tapered Diode Lasers for Biophotonics

Jensen

Hansen

Müller

et al. 2014

IEEE J. Select. Topics Quantum Electron.

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“…The barrier structure was followed by a p-doped (Al 0. 8 ) GaAs contact layer was deposited on top. InGaAlP regions were grown at ~750°C, and GaAs regions at ~700°C.…”

Section: Growth and Structural Characterizationmentioning

confidence: 99%

“…Commercially available lasers of this spectral range are mostly based on frequency doubling of the laser light from an infrared laser diode by means of a nonlinear crystal [7]. The devices are complex and bulky and the wavelength adjustment is limited to only a few selected wavelengths [8,9]. InGaAlP-based laser diodes were considered as promising candidates [10][11][12][13] for providing emission in bright-red to yellow-orange spectral range.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates

Ledentsov¹,

Shchukin²,

Shernyakov³

et al. 2018

Opt. Express

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Abstract:We report room temperature injection lasing in the yellow-orange spectral range (599-605 nm) in (Al x Ga 1-x ) 0.5 In 0.5 P-GaAs diodes with 4 layers of tensilestrained In y Ga 1-y P quantum dot-like insertions. The wafers were grown by metal-organic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the <111> direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier insertions were applied to suppress leakage of non-equilibrium electrons from the gain medium. Laser diodes having a threshold current densities of ~7-10 kA/cm 2 at room temperature were realized for both (211) and (322) surface orientations at cavity lengths of ~1mm. Emission wavelength at room temperature ~600 nm is shorter by ~8 nm than previously reported. As an opposite example, the devices grown on (811) GaAs substrates did not show lasing at room temperature. Feb. 5 (2018Feb. 5 ( ), https://www.theverge.com/2018 G. Craford, "Short-wavelength ( ≤ 6400 Å) room temperature continuous operation of p-n In 0.5 (Al x Ga 1−x ) 0.5 P quantum well lasers," Appl. Phys. Lett. 53(19), 1826-1828 (1988 In 1−x′ Ga x′ P 1−z′ As z′ /In 1−x Ga x P 1−z As z /In 1− x′ Ga x′ P 1−z′ As z′ yellow double-heterojunction laser diodes (J<10 4 A/cm 2 , λ~5850 Å, 77°K)," Appl. Phys. Lett. 27(4), 245-247 (1975) Appl. Phys. 59(3), 985-986 (1986 and reverse bias on photocurrent spectrum and supra-bandgap spectral response of monolithic GaInP/GaAs double-junction solar cell," Front. Optoelectron. 9(2), 306-311 (2016).

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Orange light generation from a PPKTP waveguide end pumped by a cw quantum-dot tunable laser diode

Cited by 25 publications

References 6 publications

Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

Power Scaling of Nonlinear Frequency Converted Tapered Diode Lasers for Biophotonics

Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates

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