Optoelectronics properties of TiO2:Cu thin films obtained by sol gel method

Essalhi, Zineb; Hartiti, Bouchaíb; Lfakir, A.; Marı́, B.; Thévenin, Philippe

doi:10.1007/s11082-017-1142-0

Cited by 28 publications

(11 citation statements)

References 18 publications

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“…Figure b offers a comparative analysis of crystallite size and resistivity with reference to various TiO 2 thin-film literature data. − Our findings reveal a clear trend where the resistivity of TiO 2 decreases as the grain size increases.…”

Section: Resultsmentioning

confidence: 76%

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O₃-Annealing Effect on the Etching Resilience of a TiO₂/Al₂O₃ filter Prepared by Atomic Layer Deposition

Vazquez,

López,

Bohórquez

et al. 2023

ACS Appl. Mater. Interfaces

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This research investigates the improvements of ozone (O 3 ) annealing on the optical and etching characteristics of TiO 2 /Al 2 O 3 multilayer band-pass filters designed for potential optoelectronic applications. The band-pass filters were fabricated using atomic layer deposition (ALD), and their performance was systematically analyzed after the addition of O 3 annealing at moderate temperatures (up to 300 °C). Results reveal that O 3 annealing improves the optical transmittance of the multilayers by approximately 40% without significant spectral changes (∼6 nm). The observed enhancement in the transmittance is attributed to the improved stoichiometry of TiO 2 . By filling in the oxygen vacancies created during the fabrication process, it reduces its extinction coefficient. Furthermore, the O 3 annealing enhances the stability of TiO 2 against wet etching, improving the uniformity of etched surfaces. Etching on the ozoneannealed multilayer was up to 8 times more homogeneous, as observed in the roughness. The relatively short duration of the O 3 annealing process, approximately 1.6 h, makes it a cost-effective alternative compared to using ozone in the ALD process, which can last several hours for thick optical coatings.

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Section: Resultsmentioning

confidence: 76%

“…(a) I – V curves of the TiO 2 /A l2 O 3 multilayers showing the effect of the O 3 annealing and a schematic of the four-probe measurements. (b) Comparison of crystallite size and resistivity for different TiO 2 thin-film literature data. − …”

Section: Resultsmentioning

confidence: 99%

O₃-Annealing Effect on the Etching Resilience of a TiO₂/Al₂O₃ filter Prepared by Atomic Layer Deposition

Vazquez,

López,

Bohórquez

et al. 2023

ACS Appl. Mater. Interfaces

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“…E U represents the strain, dislocations, dynamic phonon disorder, and static structural disorder in the form of lattice point defects of these electrodes. [43,44] An exponential part is present in the energy spectrum of the absorption coefficient curve near the optical band edge of the material, identified as the Urbach tail. It represents the tail of the localized states in the optical bandgap.…”

Section: Uv-visible Absorption Spectroscopymentioning

confidence: 99%

Metal and Nonmetal Ion Doping Effect on the Dielectric Relaxation of TiO₂ Electrodes

Vishwakarma

Bag

Jain

2023

Physica Status Solidi (a)

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Titanium dioxide (TiO2) is a highly stable, photosensitive, and nontoxic metal oxide. The physical and chemical properties of TiO2 electrodes have been explored extensively for the last few decades. However, a detailed and comparative study of the dielectric relaxation and carrier kinetics with the dopants is still lacking. Herein, the crystallinity of TiO2 electrodes decreased with the dopants is reported. The doping of copper (Cu) in TiO2 reduces its bandgap to 2.98 eV from 3.22 eV. The improved charge carrier conduction at high frequencies (ω = 103–106 radians s−1) with the doping is noticed. The charge transfer resistance (R ct) for the electrons is minimum for Cu–TiO2 (R ct = 34.11 Ω) and Cu, Zn, and N–TiO2 (R ct = 27.44 Ω) compared to pristine and Cu and Zn–TiO2. Further, the high electrical permittivity is associated with the polar nature of electrodes. The correlation analysis of impedance and modulus spectroscopy data provides a prodigious picture of the charge carrier relaxation and conduction mechanism. A shift in the dielectric relaxation process from Debye type to non‐Debye type is observed after doping due to defect‐mediated fast relaxation of polarization.

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“…The instrument measures the Rs square resistance. The calculation of electrical resistivity was performed via the formula shown below [30]:…”

Section: Electrical Properties and Figure Of Meritmentioning

confidence: 99%

Experimental and numerical simulation studies of CuO thin films based solar cells

Benaissa,

Garmim,

El Boughdadi

et al. 2023

Eng. Res. Express

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In this work, CuO thin films that were elaborated via spray pyrolysis have been examined in terms of how the film thickness affects the structural, optical, and electrical aspects of the films. The CuO films are polycrystalline with a monoclinic structure according to X-ray diffraction. Moreover, the band gap energy was discovered to be between 1.14eV, 1.53 eV and 1.61. Using the four-point probe, the electrical resistivity was computed and the high conductivity found corresponds to the sample generated with a film thickness of t=292 nm, is 7.52 (×10-3 Ω.cm)-1. Besides that, using SCAPS-1D software, a numerical calculation of the performance of the CuO-based solar cells was made Based on the experimental finding. So when absorber layer thickness is 292 nm, and the band gap value is 1.53 eV, the optimized CuO/TiO2/FTO solar cell structure demonstrated a potential efficiency of 13,38%. The impact of the absorber layer thickness and temperature on solar cell performance have been thoroughly explored. Moreover, the CuO/TiO2/FTO solar cells curves of external quantum efficiency (EQE) for various CuO layer thicknesses were determined. 

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Optoelectronics properties of TiO2:Cu thin films obtained by sol gel method

Cited by 28 publications

References 18 publications

O₃-Annealing Effect on the Etching Resilience of a TiO₂/Al₂O₃ filter Prepared by Atomic Layer Deposition

O₃-Annealing Effect on the Etching Resilience of a TiO₂/Al₂O₃ filter Prepared by Atomic Layer Deposition

Metal and Nonmetal Ion Doping Effect on the Dielectric Relaxation of TiO₂ Electrodes

Experimental and numerical simulation studies of CuO thin films based solar cells

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Optoelectronics properties of TiO2:Cu thin films obtained by sol gel method

Cited by 28 publications

References 18 publications

O3-Annealing Effect on the Etching Resilience of a TiO2/Al2O3 filter Prepared by Atomic Layer Deposition

O3-Annealing Effect on the Etching Resilience of a TiO2/Al2O3 filter Prepared by Atomic Layer Deposition

Metal and Nonmetal Ion Doping Effect on the Dielectric Relaxation of TiO2 Electrodes

Experimental and numerical simulation studies of CuO thin films based solar cells

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Product

Resources

About

O₃-Annealing Effect on the Etching Resilience of a TiO₂/Al₂O₃ filter Prepared by Atomic Layer Deposition

O₃-Annealing Effect on the Etching Resilience of a TiO₂/Al₂O₃ filter Prepared by Atomic Layer Deposition

Metal and Nonmetal Ion Doping Effect on the Dielectric Relaxation of TiO₂ Electrodes