Optoelectronic techniques for ultrafast device network analysis to 700 GHz

Frankel, M.Y.

doi:10.1007/bf00820149

Cited by 18 publications

(5 citation statements)

References 55 publications

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“…For these reasons, several non-invasive methods for testing of MMIC are emerging, such as modified-scanning-force microprobes [32], antenna couplers [33] and EOS measurement technology [34,35]. Based on the ultrafast optoelectronic technology, the EOS method which measures the electric field generated above an MMIC is promising as it has a bandwidth in excess of 100 GHz [36,37]. In this section, we will summarize two examples for measurements of MMIC based on the EOS optoelectronic measurement system.…”

Section: Test Of Monolithic Microwave Integrated Circuitsmentioning

confidence: 99%

Ultrafast optoelectronic technology for radio metrology applications

Ma²,

Gong³

et al. 2010

J. of Syst. Eng. Electron.

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Ultrafast optoelectronic technology has been widely used in terahertz time domain spectrum, terahertz imaging technology, terahertz communication and so on, and great progress has been achieved in the past two decade. Recently, this innovative technology has been applied in radio metrology and supplied a potential and hopeful method to solve the existent challenges of calibration devices and equipments with bandwidth up to 100 GHz. This paper generally summarizes the emerging applications of the ultrafast optoelectronic technology in radio metrology. The main applications of this technology in calibrating broadband sampling oscilloscopes, the high-speed photodiodes and calibrating the electrical pulse generators are emphasized, and the testing of monolithic microwave integrated circuits is also presented.

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Section: Test Of Monolithic Microwave Integrated Circuitsmentioning

confidence: 99%

Ultrafast optoelectronic technology for radio metrology applications

Ma²,

Gong³

et al. 2010

J. of Syst. Eng. Electron.

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“…An ultrafast pulse laser can be used as an optical probe source to sample the wave form and perform the s-parameter measurement. 5 For the cw type, a real-time probing method was demonstrated capable of performing wave form measurement. 6 However, the EO coefficients of an EO crystal are only on the order of 10 pm/V.…”

Section: Introductionmentioning

confidence: 99%

A Fabry–Pérot electro-optic sensing system using a drive-current-tuned wavelength laser diode

Kuo

Lee

2010

Review of Scientific Instruments

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A Fabry-Pérot enhanced electro-optic sensing system that utilizes a drive-current-tuned wavelength laser diode is presented. An electro-optic prober made of LiNbO(3) crystal with an asymmetric Fabry-Pérot cavity is used in this system. To lock the wavelength of the laser diode at resonant condition, a closed-loop power control scheme is proposed. Experiment results show that the system can keep the electro-optic prober at high sensitivity for a long working time when the closed-loop control function is on. If this function is off, the sensitivity may be fluctuated and only one-third of the best level in the worst case.

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“…Ultrafast photodetectors have very high bandwidth and low responsivity and have many applications such as ultrafast device network analysis [1]. The underlying physics of submicron semiconductor electron devices with response times of less than a picosecond, whose measurement is beyond the capabilities of conventional electronics, can be probed by photonic sampling techniques based on femtosecond lasers and ultrafast photodetectors.…”

Section: Introductionmentioning

confidence: 99%

“…This is the first time to the authors' knowledge that diffraction has been studied for MSM photodetectors. The need for this study is motivated by the common use of interdigitated structures with a submicron finger spacing [1,8,9]. Such small finger spacings have the advantage of shortening the carrier transit time and hence reducing the response pulse width [8].…”

Section: Introductionmentioning

confidence: 99%

One- and two-dimensional models of the transient response of metal - semiconductor - metal photodetectors including diffraction

Wilson

Walker

1997

Semicond. Sci. Technol.

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The response of metal-semiconductor-metal photodetectors to pulsed illumination was simulated for GaAs and low temperature grown LT-GaAs detectors, using a drift-diffusion model in one and two spatial dimensions. We found that the response predicted by the one-dimensional model could be made to agree closely with that of the two-dimensional model by using a single adjustable parameter representing the distance a carrier must travel in a nonilluminated region. In the two-dimensional model, diffraction of the light around the contacts has been shown to be important for a contact separation of one micron and to reduce the photocurrent significantly. LT-GaAs was modelled with the same two-dimensional model as for GaAs, but with a recombination lifetime of 5 ps and lower carrier mobilities. Our results show that the photocurrent decreases to zero in 40 ps, whereas in bulk GaAs, with a recombination lifetime of 1 ns, there is a long lived tail in the photocurrent after 100 ps. Diffraction was shown to have similar effects for LT-GaAs as for GaAs.

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Optoelectronic techniques for ultrafast device network analysis to 700 GHz

Cited by 18 publications

References 55 publications

Ultrafast optoelectronic technology for radio metrology applications

Ultrafast optoelectronic technology for radio metrology applications

A Fabry–Pérot electro-optic sensing system using a drive-current-tuned wavelength laser diode

One- and two-dimensional models of the transient response of metal - semiconductor - metal photodetectors including diffraction

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