Optoelectronic synaptic plasticity mimicked in ZnO-based artificial synapse for neuromorphic image sensing application

Subin, P. S.; Midhun, P S; Antony, Aldrin; Saji, K. J.; Jayaraj, M. K.

doi:10.1016/j.mtcomm.2022.104232

Cited by 13 publications

(12 citation statements)

References 45 publications

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“…3d) indicates the exponential decay of the PPF index from the highest 138% at 5 s to 115% at 110 s showing an inverse relationship with the time difference, corroborating with the biological synaptic behaviour. A two-phase exponential decay function is used to simulate the experimental data using the equation 42 ,…”

Section: Resultsmentioning

confidence: 99%

All oxide based flexible multi-folded invisible synapse as vision photo-receptor

Chen

Panda

Tseng

2023

Sci Rep

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All oxide-based transparent flexible memristor is prioritized for the potential application in artificially simulated biological optoelectronic synaptic devices. SnOx memristor with HfOx layer is found to enable a significant effect on synaptic properties. The memristor exhibits good reliability with long retention, 104 s, and high endurance, 104 cycles. The optimized 6 nm thick HfOx layer in SnOx-based memristor possesses the excellent synaptic properties of stable 350 epochs training, multi-level conductance (MLC) behaviour, and the nonlinearity of 1.53 and 1.46 for long-term potentiation and depression, respectively, and faster image recognition accuracy of 100% after 23 iterations. The maximum weight changes of -73.12 and 79.91% for the potentiation and depression of the synaptic device, respectively, are observed from the spike-timing-dependent plasticity (STDP) characteristics making it suitable for biological applications. The flexibility of the device on the PEN substrate is confirmed by the acceptable change of nonlinearities up to 4 mm bending. Such a synaptic device is expected to be used as a vision photo-receptor.

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Section: Resultsmentioning

confidence: 99%

All oxide based flexible multi-folded invisible synapse as vision photo-receptor

Chen

Panda

Tseng

2023

Sci Rep

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“…S4 (ESI †), the InZnO nanowires exhibit large optical absorbance when the wavelength of the driven light is less than 400 nm. 35 The optical bandgap of the InZnO nanowires implemented in this study has been calculated to be 3.27 eV (379 nm), as shown in the inset of Fig. S4 (ESI †).…”

Section: Materials Characterization and Device Fabricationmentioning

confidence: 95%

Ultraviolet-driven metal oxide semiconductor synapses with improved long-term potentiation

et al. 2023

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“…from HP Labs proposed a simple physical model of memristor based on oxygen vacancy migration. [ 9,10,28,70,71 ] The memristor consists of metal electrode/semiconductor thin film/metal electrode. Semiconductor thin film is divided into high doping concentration area and low doping concentration area.…”

Section: Categories Of Ld Optoelectronic Neuromorphic Devicesmentioning

confidence: 99%

“…Strukov et al from HP Labs proposed a simple physical model of memristor based on oxygen vacancy migration. [9,10,28,70,71] The Reproduced with permission. [45] Copyright 2021, American Chemical Society.…”

Section: Vacancy Migrationmentioning

confidence: 99%

Advanced Optoelectronic Devices for Neuromorphic Analog Based on Low‐Dimensional Semiconductors

Wang

Zong²,

Liu

et al. 2023

Adv Funct Materials

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Neuromorphic systems can parallelize the perception and computation of information, making it possible to break through the von Neumann bottleneck. Neuromorphic engineering has been developed over a long period of time based on Hebbian learning rules. The optoelectronic neuromorphic analog device combines the advantages of electricity and optics, and can simulate the biological visual system, which has a very strong development potential. Low‐dimensional materials play a very important role in the field of optoelectronic neuromorphic devices due to their flexible bandgap tuning mechanism and strong light‐matter coupling efficiency. This review introduces the basic synaptic plasticity of neuromorphic devices. According to the different number of terminals, two‐terminal neuromorphic memristors, three‐terminal neuromorphic transistors and artificial visual system are introduced from the aspects of the action mechanism and device structure. Finally, the development prospect of optoelectronic neuromorphic analog devices based on low‐dimensional materials is prospected.

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Optoelectronic synaptic plasticity mimicked in ZnO-based artificial synapse for neuromorphic image sensing application

Cited by 13 publications

References 45 publications

All oxide based flexible multi-folded invisible synapse as vision photo-receptor

All oxide based flexible multi-folded invisible synapse as vision photo-receptor

Ultraviolet-driven metal oxide semiconductor synapses with improved long-term potentiation

Advanced Optoelectronic Devices for Neuromorphic Analog Based on Low‐Dimensional Semiconductors

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