Optoelectronic surface emitters of terahertz radiation from copper chalcogenides

Adomavičius, R.; Krotkus, A.; Šustavičiūtė, R.; Molis, G.; Kois, J.; Bereznev, Sergei; Mellikov, E.; Gashin, P.

doi:10.1049/el:20072035

Cited by 9 publications

(3 citation statements)

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“…In other works [12,14] the observation of the efficient THz radiation from the surface of chalcopyrite I-III-VI 2 compounds excited by femtosecond laser pulses has been reported. It has been found that terahertz radiation efficiency is critically dependent on the stoichiometry of CuInSe 2 layers [12].…”

Section: Resultsmentioning

confidence: 96%

The terahertz emission and photoelectron spectroscopy study of CuInS2 thin films

Balakauskas¹,

Koroliov²,

Grebinskij³

et al. 2012

Lith. J. Phys.

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CuInS 2 thin films were produced by a two-stage process by means of the sulfurisation of magnetron-sputtered metallic precursor layers on molybdenum-covered soda-lime glass substrates. Terahertz pulse generation from the surface of CuInS 2 thin films excited by femtosecond laser pulses was studied. Terahertz radiation efficiency is dependent on the stoichiometry of the films obtained. The interface formation between vacuumevaporated CdS and CuInS 2 thin films was studied by photoelectron spectroscopy using synchrotron radiation. The valence band offset of 0.7 ± 0.1 eV was determined for the CdS/CuInS 2 heterojunction.

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Section: Resultsmentioning

confidence: 96%

The terahertz emission and photoelectron spectroscopy study of CuInS2 thin films

Balakauskas¹,

Koroliov²,

Grebinskij³

et al. 2012

Lith. J. Phys.

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“…THz radiation from the surface of CIS exited by laser pulses of 150 fs duration and the average power of 220 mW was studied using the experimental set-up described in [12,14].…”

Section: Methodsmentioning

confidence: 99%

The terahertz emission and photoelectron spectroscopy study of CuInS2 thin films

Balakauskas¹,

Koroliov²,

Grebinskij³

et al. 2012

Lith. J. Phys.

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“…Among the I–III–VI 2 compounds, CuInSe 2 is widely used due to its superior electrical properties and important applications in photovoltaic devices . CuInSe 2 is a promising solar cell photovoltaic application material, which is inseparable from its excellent properties: high light absorption coefficient (10 –5 cm –1 ); forming a structurally stable heterojunction with CdS to achieve high conversion efficiency; suitable band gap; low-cost production; low toxicity; intrinsic self-doping to adjust band gap and semiconductor conductivity types; no photoinduced attenuation effect; and good resistance to high-frequency radiation. , In recent years, in order to develop a variety of methods for synthesizing CuInSe 2 and to better understand the electrical properties and optical properties under ambient pressure, a large number of theoretical and experimental studies have been carried out. − These findings have important guiding significance for further development of the potential physical and chemical properties of CuInSe 2 .…”

Section: Introductionmentioning

confidence: 99%

Electrical Transport Properties and Band Structure of CuInSe₂ under High Pressure

Tang

et al. 2019

J. Phys. Chem. C

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Chalcopyrite-structured semiconductor CuInSe2 has received considerable attention owing to its promising electrical and optical properties for nonlinear optical instruments and photovoltaic solar cells. In view of these interesting properties of CuInSe2, it is thought to be worthwhile to study the high-pressure electrical transport behavior of this compound. Herein, we use in situ Hall-effect measurements, temperature-dependent electrical resistivity measurements, and first-principles calculations to conduct a comprehensive study on the carrier behavior and the band structure of CuInSe2 under high pressure. The resistivity shows an obvious increase with pressure and reaches the maximum value at 7.2 GPa, indicating that pressure enlarges the band gap which has been confirmed by the result of the subsequent band structure calculations. Dramatic changes in electrical transport parameters, such as Hall coefficient, Hall mobility, carrier concentration, and electrical resistivity, are detected at 7.2 GPa, which are attributed to the structural phase transition from the chalcopyrite to the NaCl-type structure. In addition, a semiconductor-to-semiconductor transition is also observed to be associated with the structure transformation, which is different from the previous theoretical prediction. The result of the band structure calculations illustrates that CuInSe2 reaches the maximum band gap of 1.201 eV at 7.0 GPa. However, the pressure coefficient of the band gap dE i/dP is lower than that of similar binary compounds which can be explained by the combination of structural distortion effect and a p–d hybridization effect under pressure. These results provide a certain guiding role for the practical applications of the materials.

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Optoelectronic surface emitters of terahertz radiation from copper chalcogenides

Cited by 9 publications

References 1 publication

The terahertz emission and photoelectron spectroscopy study of CuInS<sub>2</sub> thin films

The terahertz emission and photoelectron spectroscopy study of CuInS<sub>2</sub> thin films

The terahertz emission and photoelectron spectroscopy study of CuInS<sub>2</sub> thin films

Electrical Transport Properties and Band Structure of CuInSe₂ under High Pressure

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Optoelectronic surface emitters of terahertz radiation from copper chalcogenides

Cited by 9 publications

References 1 publication

The terahertz emission and photoelectron spectroscopy study of CuInS<sub>2</sub> thin films

The terahertz emission and photoelectron spectroscopy study of CuInS<sub>2</sub> thin films

The terahertz emission and photoelectron spectroscopy study of CuInS<sub>2</sub> thin films

Electrical Transport Properties and Band Structure of CuInSe2 under High Pressure

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Electrical Transport Properties and Band Structure of CuInSe₂ under High Pressure