Optoelectronic study in porous silicon thin films

Silicon Porosification: State of the Art

“…However, conducted research has shown that in addition to the thickness, the anodization time influences the porosity of the forming layer (see Figure 57). The results obtained by Torres et al 417 during Si porosification in a mixture of hydrofluoric acid (HF) at 10% (p/v) and isopropyl alcohol (IPA) have shown that almost linear increase of the porosity is being observed as the anodization time increases. The increase of the etching time is also accompanied by the increase of the pore size.…”

Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy

“…The uniformly distributed, well-separated, square island-like or checked nanostructures are observed in the top-view, which is significantly different from micropore-network structures of as-etched Si as obtained by ECA in Ref. [17]. The size distribution of the checked nanostructures in the top-view was estimated from measurements of diameters of 510 islands as shown within the white-line-box area in Fig.…”

“…UHV/CVD is a well-developed epitaxy system, which has been widely used in SiGe single-crystal film growth on Si substrate with the precise control of film thickness and alloy composition. ECA is a promising method for preparing nanostructured materials such as nanowires or nanopillars structure [16][17][18] with an ease of processing and an ability to produce a high density of nanostructures whereas without changing crystal property of starting material. By combining the above two methods, we can obtain SiGe/Si heterogeneous nanostructures of uniform size and corresponding strong room-temperature PL.…”

Silicon Porosification: Approaches to PSi Parameters Control

“…The results obtained by Torres et al (2008) during Si porosification in a mixture of hydrofluoric acid (HF) at 10% (p/v) and isopropyl alcohol (IPA) have found that an almost linear increase of the porosity is being observed as the anodization time increases. The increase of the etching time is also accompanied by the increase of the pore size.…”