Optoelectronic sensors on GaSb- and InAs-based heterostructures for ecological monitoring and medical diagnostics

Mikhaĭlova, M. P.; Stoyanov, N. D.; Андреев, И. А.; Zhurtanov, B. E.; Kizhaev, S. S.; Kunitsyna, E. V.; Salikhov, Khafiz M.; Yakovlev, Yury P.

doi:10.1117/12.723507

Cited by 34 publications

(10 citation statements)

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“…With the help of nanophotonics technology, many medical problems that were previously unsolvable can now be solved [59]. Cell tracer technology, modified some markers in the specific cell-cell tracer, can get on two dimensions of space and time in real-time with relevant information; these cells in the body, distribution of survival, differentiation, migration, and outcome of dynamic monitoring, and at the cellular level reveal many important mechanism related to the origin of life [60]. As an important technical tool, cell tracer technology has been widely used in modern biomedical basic research and clinical applications [61].…”

Section: Novel Engineering Techniquesmentioning

confidence: 99%

Application of Nanooptics in Photographic Imagery and Medical Imaging

Liu

Pang²,

Cai

et al. 2021

Journal of Chemistry

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Background. At present, with the continuous development of nanotechnology, great changes have taken place in people’s lives in medical treatment, production, daily leisure, and so on. Nanooptical technology is entirely based on nanotechnology that laser and visible light are limited to submicron structures (nanopores, nanoslits, and nanoneedles). Due to the great development potential of nanooptical technology in nanoscale sensors, TOF camera applications, THz imaging technology, and other imaging equipment materials and applications, people have been interested in it, recently. Scope and Approach. In this review, the importance of good practices for nanooptical technology used in equipment as both nanometer scale sensors and optical auxiliary equipment is described. Based on recent reports, this work discussed the development of nanooptical technology in daily photography and medical imaging from both the positive and the negative sides and compared the engineering techniques. Key Findings and Conclusions. As a kind of new optical technology, nanooptical technology can produce the plasmonic effect under the intense collision of atoms and electrons in nanostructures. It has significant effects in superresolution nanolithography, high-density data storage, near-field optics, and other fields. Although the current nanooptic technology is not extremely mature, the results obtained from current works are pointing out that nanooptical technology is the future of daily imaging and medical imaging, and it also will play a positive role in the improvement of people’s health and ecological environment quality. As a trend, nanooptical technology is developing in the direction of energy-saving, portability, high efficiency, and low pollution, and in the upsurge of environmental protection in the world, nanooptical technology will surely achieve amazing development in the field of daily photography and medical imaging. Under the huge market demand and innovation power, nanophotonics technology will cover all emerging technologies that share the same research field with it and take advantage of each technology (terahertz, cell and molecular microscopy, and nanoscale probes) to develop an unprecedented new century in nanoscience. The future trends of research contain finding new imaging equipment with nanostructure, designing nanooptical products, and improving engineering techniques.

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Section: Novel Engineering Techniquesmentioning

confidence: 99%

Application of Nanooptics in Photographic Imagery and Medical Imaging

Liu

Pang²,

Cai

et al. 2021

Journal of Chemistry

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“…Due to its moderate bandgap of ~0.36 eV, InAs has applications in infrared detectors, meta-materials, and quantum dots. [1][2][3][4][5] The need to improve device performance, speed, and commercialization typically leads to component miniaturization. This requires strong control over the atomic structure of the material.…”

Section: Introductionmentioning

confidence: 99%

Effects of dopants on electronic surface states in InAs

2019

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The effects of several adatom dopants (H, Be, C, N, Si, and Zn) on the electronic structure of low-energy surface reconstructions of 110, 111, and 112) low-index planes-were investigated using ab initio DFT calculations. It was observed that the local electronic structure can be controlled in such materials, either reducing or enhancing surface-states depending on the dopant and the unique surface-reconstruction. The local bonding environment, in particular whether the bonding has an aromatic character, was found to influence both surfacereconstruction and a dopant's affinity for a surface. Beryllium and Zinc were often found to reduce the surface-states around the band gap, which could improve the charge-carrier mobility in various electronic components. However, these dopants can also cause further surface-reconstruction/reconfiguration inducing new surface-states.

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“…В последнее десятилетие повышенное внимание ис-следователей привлекают новые типы фотодетекторов для ближней и средней инфракрасной (ИК) области спектра, в том числе на основе наногетероструктур с глубокими квантовыми ямами (КЯ) и сверхрешетка-ми [1][2][3][4][5][6]. Такие приборы находят широкое применение в спектроскопии, волоконно-оптических линиях связи, си-стемах экологического мониторинга, газового анализа и медицинской диагностики [2].…”

Section: Introductionunclassified

“…Такие приборы находят широкое применение в спектроскопии, волоконно-оптических линиях связи, си-стемах экологического мониторинга, газового анализа и медицинской диагностики [2]. При этом актуальной оста-ется задача повышения фоточувствительности и кванто-вой эффективности фотодиодов на основе узкозонных полупроводников, работающих в ближнем и среднем ИК диапазоне.…”

Section: Introductionunclassified

Эффект увеличения фотопроводимости в гетероструктуре II типа n-GaSb/InAs/p-GaSb с одиночной квантовой ямой

Михайлова¹,

Андреев²,

Данилов³

et al. 2018

Физика И Техника Полупроводников

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Significant photocurrent/photoconductivity amplification is observed at low reverse biases in a type-II n -GaSb/InAs/ p -GaSb heterostructure with a single quantum well (QW), grown by metal-organic vapor phase epitaxy. A sharp increase in the photocurrent by more than two orders of magnitude occurs under exposure of the heterostructure to monochromatic light with a wavelength of 1.2–1.6 μm (at 77 K) and the application of a reverse bias in the range 5–200 mV. The optical gain depends on the applied voltage and increases to 2.5 × 10^2 at a reverse bias of 800 mV. Theoretical analysis demonstrated that the main role in the phenomenon is played by the screening of the external electric field by electrons accumulated in the deep InAs QW and by the mechanism of the tunneling transport of carriers with a small effective mass. It is shown that the effect under study is common to both isotype and anisotype type-II heterojunctions, including structures with QWs and superlattices.

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Optoelectronic sensors on GaSb- and InAs-based heterostructures for ecological monitoring and medical diagnostics

Cited by 34 publications

References 0 publications

Application of Nanooptics in Photographic Imagery and Medical Imaging

Application of Nanooptics in Photographic Imagery and Medical Imaging

Effects of dopants on electronic surface states in InAs

Эффект увеличения фотопроводимости в гетероструктуре II типа n-GaSb/InAs/p-GaSb с одиночной квантовой ямой

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