Optoelectronic Properties of Amorphous Silicon the Role of Hydrogen: from Experiment to Modeling

Compensation Effect in the Amorphous Hydrogenated Silicon from Point of View of the Barrier-Cluster Model

“…It expresses the dependence of the coefficient of the optical absorption α on the photon energy hf and the temperature T. It can be expressed mathematically by the relation (20,21) but the real temperature T has to be replaced by a constant parameter T * . This point was not explained satisfactorily up to now [5,18,23].…”

“…The Urbach's rule is an empirical rule, describing the absorption of light in exponential tails of optical absorption spectra [5][6][7]23]. It expresses the dependence of the coefficient of the optical absorption α on the photon energy hf and the temperature T. It can be expressed mathematically by the relation (20,21) but the real temperature T has to be replaced by a constant parameter T * .…”

“…Amorphous silicon, and its more useful alloy form, hydrogenated amorphous silicon (a-Si:H), has been the subject of investigation for over 30 years [1][2][3]. Research into a-Si began in England [4], but the major development, the demonstration of doping and the subsequent implementation of devices was made in Scotland by Spear and LeComber [4][5][6][7].…”

Gap tuning and effective electron correlation energy in amorphous silicon: A first principles density functional theory-based molecular dynamics study

“…The electrical conductivity and photoconductivity of such semiconductors are in turn affected by the presence of the inherent structural defects [67][68][69]. The problem of how the disorder in amorphous semiconductors affects the band structure and consequently the electronic properties is of salient aspects.…”

Optical characteristics of a-Si:H layers deposited by PACVD at various temperatures

“…A special advantage of a-Si:H is its ability to cover large areas and that they can be deposited on flexible substrates [1]. The a-Si:H layers are semiconductors with a simple optical gap and though it is relatively wide (about 1.8-2.0 eV) they absorb big part of sun radiation [2][3][4][5]. The absorption by a-Si:H layers is better than the absorption by crystalline silicon (c-Si) with narrow but oblique optical gap [6,7] and therefore they are successfully used instead of crystalline silicon in various large area devices.…”