Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation

Yu, Jen‐te; Liang, Lingyan; Hu, Lili; Duan, Hongxiao; Wu, Wenqiang; Zhang, Hailang; Gao, Jianfeng; Zhuge, Fei; Chang, Ting Chang; Cao, Hongtao

doi:10.1016/j.nanoen.2019.06.007

Cited by 111 publications

(105 citation statements)

References 58 publications

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“…Plethora of reports emphasized the V O ionization occurs merely via light‐directly‐excited transition, where PPC phenomenon could not be explained/justified theoretically when the incident light energy is lower than the energy gap ( ϵ ) between the ground and excitation state of V O . For example, the V O ϵ is about 2.3 eV for IGZO, indicating that the IGZO synapses cannot response to the light with the wavelength longer than 539 nm, which is not in agreement with the previous reports . Recently, we also reported optoelectronic synaptic devices based on IGZO TFTs which can effectively respond to the 650 nm light, and proposed that both the light‐directly‐excited and hole‐mediated transitions can happen to the V O in amorphous oxides .…”

contrasting

confidence: 65%

“…reported optoelectronic synapses based on indium–gallium–zinc oxide (IGZO) thin‐film transistors (TFTs) triggered by the UV and visible‐light stimulation (385–630 nm). Likewise, we also have reported a hybrid IGZO synaptic device responding to light spikes from 350 to 650 nm …”

mentioning

confidence: 54%

“…For example, the V O ϵ is about 2.3 eV for IGZO, indicating that the IGZO synapses cannot response to the light with the wavelength longer than 539 nm, which is not in agreement with the previous reports . Recently, we also reported optoelectronic synaptic devices based on IGZO TFTs which can effectively respond to the 650 nm light, and proposed that both the light‐directly‐excited and hole‐mediated transitions can happen to the V O in amorphous oxides . In this work, we fabricated TFT synapses based on sputtered InGaCdO (IGCO) thin films which showed a field‐effect mobility as high as 106 cm 2 V −1 s −1 and a relatively high photoresponse in the visible region.…”

mentioning

confidence: 61%

“…In this scenario, optical stimulation has been recently proposed to significantly ease up these issues due to the ultrafast signal transmission and high bandwidth of optical signals . In addition to that, we have already demonstrated that optoelectronic synapses have natural advantages in ocular simulation . Therefore, it is highly desirable to explore broadband optoelectronic synaptic devices to couple the optical and electrical stimuli together.…”

mentioning

confidence: 99%

“…It is generally believed that the inherent persistent photoconductivity (PPC) characteristic of oxide materials determines the optical synaptic functions of oxide devices, whereas the ionization and neutralization of oxygen vacancy ( V O ) have a significant influence on the PPC behaviors and the consequent synaptic performance . So far, there is a debate on the ionization mechanism of V O , including the light‐directly‐excited transition and the hole‐mediated transition . Plethora of reports emphasized the V O ionization occurs merely via light‐directly‐excited transition, where PPC phenomenon could not be explained/justified theoretically when the incident light energy is lower than the energy gap ( ϵ ) between the ground and excitation state of V O .…”

mentioning

confidence: 99%

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Broadband Optoelectronic Synaptic Thin‐Film Transistors Based on Oxide Semiconductors

Duan

Javaid

Liang

et al. 2020

Physica Rapid Research Ltrs

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Optoelectronic synapse, well coupling the optical and electrical signals in one device, is an important building block in neuromorphic hardware library. Herein, optoelectronic synaptic devices are demonstrated based on a unique amorphous oxide semiconductor (InGaCdO [IGCO]) that can be spiked by broadband light signals from ultraviolet to near‐infrared region, approaching the wavelength of 1000 nm. These optically stimulated synaptic devices are based on the conventional bottom‐gate thin‐film transistor (TFT) configuration, providing the beneficial process/structural compatibility with the flat‐panel display industry. The IGCO TFTs, showing an ultrahigh field‐effect mobility up to 106 cm2 V−1 s−1, can well simulate a series of basic synaptic functionalities via changing the pulse intensity, number, and frequency. The device plasticity originates from the dynamic ionization and neutralization of oxygen vacancy‐related defects. Also, the mechanism underlying this dynamic process is discussed in detail, verifying that oxygen vacancy can turn to its ionized state by directly absorbing a photon having enough energy or with the aid of holes. The relatively higher carrier mobility, smaller bandgap, and larger activation energy of oxygen vacancy for the IGCO together facilitate the achievement of broadband optoelectronic synaptic devices.

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confidence: 65%

mentioning

confidence: 54%

mentioning

confidence: 61%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Broadband Optoelectronic Synaptic Thin‐Film Transistors Based on Oxide Semiconductors

Duan

Javaid

Liang

et al. 2020

Physica Rapid Research Ltrs

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Sub‐Femtojoule‐Energy‐Consumption Conformable Synaptic Transistors Based on Organic Single‐Crystalline Nanoribbons

Zhang

Wang

Zhao

et al. 2020

Adv Funct Materials

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Inspired from powerful functionalities of human brain, artificial synapses are innovated continuously for the construction of brain‐like neuromorphic electronics. The quest to rival the ultralow energy consumption of biological synapses has become highly compelling, but remains extremely difficult due to the lack of appropriate materials and device construction. In this study, organic single‐crystalline nanoribbon active layer and elastic embedded photolithographic electrodes are first designed in synaptic transistors to reduce energy consumption of single device. The minimum energy consumption (0.29 fJ) of one synaptic event is far lower than that of biological synapse (10 fJ). Notably, sub‐femtojoule‐energy‐consumption synaptic transistors can simulate various biological plastic behaviors even under different tensile and compressive strains, offering a new guidance for the construction of ultralow‐energy‐consuming neuromorphic electronic devices and the development of flexible artificial intelligence electronics in the future.

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Artificial Optoelectronic Synapses Based on TiN_xO_2–_x/MoS₂ Heterojunction for Neuromorphic Computing and Visual System

Wang

Gao

Yang

et al. 2021

Adv Funct Materials

102

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Being capable of dealing with both electrical signals and light, artificial optoelectronic synapses are of great importance for neuromorphic computing and are receiving a burgeoning amount of interest in visual information processing. In this work, an artificial optoelectronic synapse composed of Al/TiNxO2–x/MoS2/ITO (H‐OSD) is proposed and experimentally realized. The H‐OSD can enable basic electrical voltage‐induced synaptic functions such as the long/short‐term plasticity and moreover the synaptic plasticity can be electrically adjusted. In response to the light stimuli, versatile advanced synaptic functions including long/short‐term memory, and learning‐forgetting‐relearning are successfully demonstrated, which could enhance the information processing capability for neuromorphic computing. Most importantly, based on these light‐induced salient features, a 4 × 4 synapse array is developed to show the potential application of the proposed H‐OSD in constructing artificial visual system. It is shown that the perceiving and memorizing of the light information that are respectively relevant to the visual perception and visual memory functions, can be readily attained through tuning of the light intensity and the number of illuminations. As such, the proposed optoelectronic synapse shows great potentials in both neuromorphic computing and visual information processing and will facilitate the applications such as electronic eyes and light‐driven neurorobotics.

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Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation

Cited by 111 publications

References 58 publications

Broadband Optoelectronic Synaptic Thin‐Film Transistors Based on Oxide Semiconductors

Broadband Optoelectronic Synaptic Thin‐Film Transistors Based on Oxide Semiconductors

Sub‐Femtojoule‐Energy‐Consumption Conformable Synaptic Transistors Based on Organic Single‐Crystalline Nanoribbons

Artificial Optoelectronic Synapses Based on TiN_xO_2–_x/MoS₂ Heterojunction for Neuromorphic Computing and Visual System

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Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation

Cited by 111 publications

References 58 publications

Broadband Optoelectronic Synaptic Thin‐Film Transistors Based on Oxide Semiconductors

Broadband Optoelectronic Synaptic Thin‐Film Transistors Based on Oxide Semiconductors

Sub‐Femtojoule‐Energy‐Consumption Conformable Synaptic Transistors Based on Organic Single‐Crystalline Nanoribbons

Artificial Optoelectronic Synapses Based on TiNxO2–x/MoS2 Heterojunction for Neuromorphic Computing and Visual System

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Product

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Artificial Optoelectronic Synapses Based on TiN_xO_2–_x/MoS₂ Heterojunction for Neuromorphic Computing and Visual System