Optoelectronic memory in 2D MoS2 field effect transistor

Kumar, Arun; Faella, Enver; Durante, O.; Giubileo, Filippo; Pelella, Aniello; Viscardi, Loredana; Intonti, Kimberly; Sleziona, Stephan; Schleberger, Marika; Bartolomeo, Antonio Di

doi:10.1016/j.jpcs.2023.111406

Cited by 22 publications

(16 citation statements)

References 51 publications

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“…The field-effect mobility of ∼3 cm 2 V –1 s –1 was extracted from the linear part of the transfer curve on the linear scale, shown in the inset of Figure b, according to the formula μ FE = normald I D normald V GS L W 1 C OX V DS where C ox = 1.15 × 10 –8 F cm –2 is the gate dielectric capacitance. The result is consistent with other works on similar devices , and is typical of several TMDs. ,, Since high biases were applied, the current through the oxide was also monitored to make sure that no gate leakage was affecting the measurements.…”

Section: Resultssupporting

confidence: 89%

“…The result is consistent with other works on similar devices 18,19 and is typical of several TMDs. 13,33,34 Since high biases were applied, the current through the oxide was also monitored to make sure that no gate leakage was affecting the measurements. To understand the mechanisms that limit the mobility in ReS 2 , we examined the temperature dependence of the electrical properties in the range 180−350 K. This range was also chosen since it is suitable to carry out a transistor analysis based on the Arrhenius model.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…In particular, two-dimensional materials, like graphene, − black phosphorus (BP), , and transition-metal dichalcogenides (TMDs), − have been widely investigated for optoelectronic applications. Most group-VI TMDs, such as molybdenum disulfide/diselenide and tungsten disulfide/diselenide, exhibit a transition from an indirect to a direct band gap, while their thickness is reduced to a monolayer, which make them suitable to be used as channel materials in field-effect transistors and photodetectors. − For instance, molybdenum disulfide (MoS 2 ) exhibits a high mobility, a high I on / I off ratio, as well as high photoresponsivity and optical memory performance. , …”

Section: Introductionmentioning

confidence: 99%

“…9−12 For instance, molybdenum disulfide (MoS 2 ) exhibits a high mobility, a high I on /I off ratio, as well as high photoresponsivity and optical memory performance. 13,14 Rhenium disulfide (ReS 2 ), together with rhenium diselenide 15 (ReSe 2 ), is one of the most recently discovered materials belonging to group-VII TMDs and exhibiting a distorted 1T highly anisotropic in-plane structure. It differs from group VI TMDs because it maintains a direct band gap of ∼1.5 eV and an almost invariant band structure irrespective of the thickness.…”

Section: ■ Introductionmentioning

confidence: 99%

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Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS₂

Intonti,

Faella,

Kumar

et al. 2023

ACS Appl. Mater. Interfaces

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The electrical behavior and the photoresponse of rhenium disulfide field-effect transistors (FETs) have been widely studied; however, only a few works have investigated the photocurrent as a function of temperature. In this paper, we perform the electrical characterization of few-layer ReS 2 -based FETs with Cr−Au contacts over a wide temperature range. We exploit the temperature-dependent transfer and output characteristics to estimate the effective Schottky barrier at the Cr−Au/ReS 2 interface and to investigate the temperature behavior of parameters, such as the threshold voltage, carrier concentration, mobility, and subthreshold swing. Through time-resolved photocurrent measurements, we show that the photocurrent increases with temperature and exhibits a linear dependence on the incident light power at both low and room temperatures and a longer rise/decay time at higher temperatures. We surmise that the photocurrent is affected by the photobolometric effect and light-induced desorption of adsorbates which are facilitated by the high temperature and the low pressure.

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Section: Resultssupporting

confidence: 89%

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS₂

Intonti,

Faella,

Kumar

et al. 2023

ACS Appl. Mater. Interfaces

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“…Among two-dimensional (2D) layered materials, transition-metal dichalcogenides (TMDs) have exhibited remarkable optoelectronic properties, garnering significant attention due to their tunable bandgap. , The most widely used and exploited TMD is molybdenum disulfide (MoS 2 ), characterized by a direct bandgap (∼1.85 eV) in monolayer and an indirect bandgap (∼1.2 eV) in multilayer form . These features make it suitable for sensitive photodetectors, optoelectronic memories, and performant field-effect transistors (FETs). − Nevertheless, the exploration of TMDs is moving forward to other family members with very interesting properties. − Distinctively, unlike materials such as graphene, which exhibit a zero bandgap, rhenium disulfide (ReS 2 ) maintains a direct bandgap (∼1.5 eV) consistently in both bulk and monolayer forms. This remarkable property results from the electronic and vibrational decoupling of the stacked monolayers .…”

Section: Introductionmentioning

confidence: 99%

Subthreshold Current Suppression in ReS₂ Nanosheet-Based Field-Effect Transistors at High Temperatures

Durante,

Intonti,

Viscardi

et al. 2023

ACS Appl. Nano Mater.

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Two-dimensional rhenium disulfide (ReS2), a member of the transition-metal dichalcogenide family, has received significant attention due to its potential applications in field-effect transistors (FETs), photodetectors, and memories. In this work, we investigate the suppression of the subthreshold current during the forward voltage gate sweep, leading to an inversion of the hysteresis in the transfer characteristics of ReS2 nanosheet-based FETs from clockwise to anticlockwise. We explore the impact of temperature, sweeping gate voltage, and pressure on this behavior. Notably, the suppression in current within the subthreshold region coincides with a peak in gate current, which increases beyond a specific temperature but remains unaffected by pressure. We attribute both the suppression in drain current and the presence of peak in gate current to the charge/discharge process of gate oxide traps by thermal-assisted tunnelling. The suppression of the subthreshold current at high temperatures not only reduces power consumption but also extends the operational temperature range of ReS2 nanosheet-based FETs.

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Negative Photoconductivity Transistors for Visuomorphic Computing

Wang,

Liu

et al. 2024

Advanced Materials

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Visuomorphic computing aims to simulate and potentially surpass the human retina by mimicking biological visual perception with an artificial retina. Despite significant progress, challenges persist in perceiving complex interactive environments. Negative photoconductivity transistors (NPTs) mimic synaptic behavior by achieving adjustable positive photoconductivity (PPC) and negative photoconductivity (NPC), simulating “excitation” and “inhibition” akin to sensory cell signals. In complex interactive environments, NPTs are desired for visuomorphic computing that can achieve a better sense of information, lower power consumption, and reduce hardware complexity. In this review, it is started by introducing the development process of NPTs, while placing a strong emphasis on the device structures, working mechanisms, and key performance parameters. The common material systems employed in NPTs based on their functions are then summarized. Moreover, it is proceeded to summarize the noteworthy applications of NPTs in optoelectronic devices, including advanced multibit nonvolatile memory, optoelectronic logic gates, optical encryption, and visual perception. Finally, the challenges and prospects that lie ahead in the ongoing development of NPTs are addressed, offering valuable insights into their applications in optoelectronics and a comprehensive understanding of their significance.

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Optoelectronic memory in 2D MoS2 field effect transistor

Cited by 22 publications

References 51 publications

Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS₂

Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS₂

Subthreshold Current Suppression in ReS₂ Nanosheet-Based Field-Effect Transistors at High Temperatures

Negative Photoconductivity Transistors for Visuomorphic Computing

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Optoelectronic memory in 2D MoS2 field effect transistor

Cited by 22 publications

References 51 publications

Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS2

Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS2

Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures

Negative Photoconductivity Transistors for Visuomorphic Computing

Contact Info

Product

Resources

About

Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS₂

Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS₂

Subthreshold Current Suppression in ReS₂ Nanosheet-Based Field-Effect Transistors at High Temperatures