Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction

Yi, So Young; Kim, Joo Hyoung; Min, Jung Ki; Park, Min Ji; Yoo, Keunje; Chang, Young Wook

doi:10.1109/nano.2015.7388678

Cited by 3 publications

(6 citation statements)

References 24 publications

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“…Interestingly, the I DS as a function of back gate voltage (V BG ) show an unusual dip at the highest conductance value on top of the usual antiambipolar nature. [15][16][17][18][19][20][21] We further show that the magnitude and the position of the dip in I DS -V BG curve can be modulated by changing the incident power density of light. This unique observation can be explained by including interlayer recombination rate of charge carriers along with the individual layer response.…”

Section: Introductionmentioning

confidence: 59%

“…These TMD-based vertical heterostructures have shown potentials as p-n junction and most of these p-n junctions show antiambipolar transconductance behavior. [15][16][17][18][19][20][21] However, p-n junction made of single layer of TMDs, known as atomically thin p-n junctions, [22][23][24][25] show quite different type of charge transport mechanism compared to the conventional p-n junction. Here, transport occurs via tunneling of carriers from one layer to the other layer.…”

Section: Introductionmentioning

confidence: 99%

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Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

et al. 2017

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Fabrication of the out-of-plane atomically sharp p-n junction by stacking two dissimilar two-dimensional materials could lead to new and exciting physical phenomena. The control and tunability of the interlayer carrier transport in these p-n junctions have a potential to exhibit new kind of electronic and optoelectronic devices. In this article, we present the fabrication, electrical, and optoelectrical characterization of vertically stacked few-layers MoTe 2 (p)-single-layer MoS 2 (n) heterojunction. Over and above the antiambipolar transfer characteristics observed similar to other hetero p-n junction, our experiments reveal a unique feature as a dip in transconductance near the maximum. We further observe that the modulation of the dip in the transconductance depends on the doping concentration of the two-dimensional flakes and also on the power density of the incident light. We also demonstrate high photo-responsivity of~10 5 A/W at room temperature for a forward bias of 1.5 V. We explain these new findings based on interlayer recombination rate-dependent semi-classical transport model. We further develop first principles-based atomistic model to explore the charge carrier transport through MoTe 2 -MoS 2 heterojunction. The similar dip is also observed in the transmission spectrum when calculated using density functional theory-non-equilibrium Green's function formalism. Our findings may pave the way for better understanding of atomically thin interface physics and device applications.

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Section: Introductionmentioning

confidence: 59%

Section: Introductionmentioning

confidence: 99%

Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

et al. 2017

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“…This results from negligible hysteresis in the transfer characteristics of heterojunction device owing to the photoinduced doping treatment (Figure S3). Such a level of hysteresis minimization has been rarely achieved in previous studies 23,24,27 despite its great importance in practical applications.…”

Section: Resultsmentioning

confidence: 99%

“…Another important feature is its gate-tunable rectification characteristics, which have been widely used to develop gate-tunable rectifier circuits and photodetectors. 23,24,27,29,31,34 Despite their potential in a wide range of applications, fabrication of anti-ambipolar heterojunctions with reliable and consistent performances remains a challenging task. It requires highly precise control of the turn-on voltages (V on ) and carrier densities of both the n-type and p-type transistors in the junction.…”

mentioning

confidence: 99%

Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe₂/MoS₂ Heterotransistors

Xie

Liu

et al. 2019

ACS Nano

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van der Waals (vdW) p–n heterojunctions formed by two-dimensional nanomaterials exhibit many physical properties and deliver functionalities to enable future electronic and optoelectronic devices. In this report, we demonstrate a tunable and high-performance anti-ambipolar transistor based on MoTe2/MoS2 heterojunction through in situ photoinduced doping. The device demonstrates a high on/off ratio of 105 with a large on-state current of several micro-amps. The peak position of the drain–source current in the transfer curve can be adjusted through the doping level across a large dynamic range. In addition, we have fabricated a tunable multivalue inverter based on the heterojunction that demonstrates precise control over its output logic states and window of midlogic through source–drain bias adjustment. The heterojunction also exhibits excellent photodetection and photovoltaic performances. Dynamic and precise modulation of the anti-ambipolar transport properties may inspire functional devices and applications of two-dimensional nanomaterials and their heterostructures of various kinds.

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“…18,19 Considering the above-mentioned characteristics of 2D materials, several studies have utilized vdW p−n heterojunctions of 2D materials as active layers of photovoltaic devices. Furchi et al 5 and Yi et al 20 reported gate-tunable photovoltaic properties of WSe 2 /MoS 2 p−n heterojunctions. For MoS 2 /WSe 2 vdW structure, device physics in terms of photovoltaic cell were also studied by Furchi et al 21 and Wong et al 22 GaTe/MoS 2 and ReSe 2 /MoS 2 vdW p−n junctions were investigated by Wang et al 23 and Wang et al 24 as photodetectors and photovoltaic devices, respectively.…”

Section: ■ Introductionmentioning

confidence: 99%

Hexagonal Boron Nitride for Surface Passivation of Two-Dimensional van der Waals Heterojunction Solar Cells

Cho

Kwon

2019

ACS Appl. Mater. Interfaces

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Two-dimensional (2D) semiconductors can be promising active materials for solar cells due to their advantageous electrical and optical properties, in addition to their ability to form high-quality van der Waals (vdW) heterojunctions using a simple process. Furthermore, the atomically thin nature of these 2D materials allows them to form lightweight and transparent thin-film solar cells. However, strategies appropriate for optimizing their properties have not been extensively studied yet. In this paper, we propose a method for reducing the electrical loss of 2D vdW solar cells by introducing hexagonal boron nitride (h-BN) as a surface passivation layer. This method allowed us to enhance the photovoltaic performance of a MoS2/WSe2 solar cell. In particular, we observed ∼74% improvement of the power conversion efficiency owing to a large increase in both short-circuit current and open-circuit voltage. Such a remarkable performance enhancement was due to the reduction of the recombination rate at the junction and surface of nonoverlapped semiconductor regions, which was confirmed via a time-resolved photoluminescence analysis. Furthermore, the h-BN top layer was found to improve the long-term stability of the tested 2D solar cell under ambient conditions. We observed the evolution of our MoS2/WSe2 solar cell for a month and found that h-BN passivation effectively suppressed its degradation speed. In particular, the degradation speed of the passivated cell was twice as low as that of a nonpassivated cell. This work reveals that h-BN can successfully suppress the electrical loss and degradation of 2D vdW heterojunction solar cells under ambient conditions.

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Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction

Cited by 3 publications

References 24 publications

Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe₂/MoS₂ Heterotransistors

Hexagonal Boron Nitride for Surface Passivation of Two-Dimensional van der Waals Heterojunction Solar Cells

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Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction

Cited by 3 publications

References 24 publications

Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe2/MoS2 Heterotransistors

Hexagonal Boron Nitride for Surface Passivation of Two-Dimensional van der Waals Heterojunction Solar Cells

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Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe₂/MoS₂ Heterotransistors