Opto-electronic properties of bismuth oxide films presenting different crystallographic phases

Gómez, Consuelo; Depablos-Rivera, Osmary; Silva-Bermúdez, Phaedra; Mühl, S.; Zeinert, A.; Lejeune, M.; Charvet, S.; Barroy, Pierre; Camps, E.; Rodil, S.E.

doi:10.1016/j.tsf.2015.02.020

Cited by 40 publications

(9 citation statements)

References 45 publications

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“…Thus, as in the case of thermal oxidation in air, bismuth presents a complicated composition and structure of intermediate oxides and some of the polymorphs of the stoichiometric bismuth trioxide. Even though the structure is rather complicated, the films present remarkable properties and are suitable for specific applications, therefore justifying their study [14,15,[38][39][40][41][45][46][47].…”

Section: Resultsmentioning

confidence: 99%

“…Such properties, i.e. large energy band gap, refractive index, dielectric permittivity as well as remarkable photoconductivity and photoluminescence [15,[38][39][40][41], make bismuth oxide an interesting candidate for applications in the fields such as optoelectronics, optical coatings, gas sensors, Schottky barrier solar cells, metal-insulator-semiconductor (MIS) capacitors, microwave integrated circuits, etc. Even so, their real use is less extensive since for such nanostructures one major issue is to obtain a single stable phase needed in the technological applications.…”

Section: Introductionmentioning

confidence: 99%

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Effect of substrate temperature on bismuth oxide thin films grown by pulsed laser deposition

Condurache-Bota¹,

Tigau²,

Constantinescu³

2020

SN Appl. Sci.

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We present and discuss on bismuth oxide films grown on cost-efficient BK7 glass slides by pulsed laser deposition using a metallic target. Our choice is of particular interest due to the high number of intermediate bismuth oxides that can form during the oxidation process, along with the polymorphs of the stoichiometric oxide, i.e. bismuth trioxide (Bi 2 O 3). We show that the oxidation degree of bismuth increases with substrate temperature, t S (300-600 °C), when grown in 100 sccm flow at 6 × 10 −1 mbar O 2 partial pressure. Thin film crystallinity is also increased with t S , as expected. Instead, the refractive index (n) of the films decreases in the visible range, as t S is increased. Furthermore, the transmittance of the films increases with t S to over 60%, especially in the red and near-infrared region (above 600 nm). As a final point, the results are discussed and compared to literature.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of substrate temperature on bismuth oxide thin films grown by pulsed laser deposition

Condurache-Bota¹,

Tigau²,

Constantinescu³

2020

SN Appl. Sci.

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“…Bi2O3 exists as five different phases, namely α, β, γ, δ and ω with different crystal structure and physico-chemical properties (12). Interestingly, these Bi2O3 polymorphs exhibit visible light responses with bandgap values between 2.1 and 2.85 eV (13)(14)(15), attracting a considerable attention as semiconductors for photovoltaics, photocatalysis and optoelectronics (9)(10)(11). Further, BiOX (X = Cl, Br, I) and Bi2XO6 (X = W, Mo) families exhibit [Bi2O2] 2+ layers (Figure 1), which are believed to be the responsible for photocatalytic activity, owing to their efficient charge separation properties.…”

Section: Introductionmentioning

confidence: 99%

A Semiconducting Bi₂O₂(C₄O₄) Coordination Polymer Showing a Photoelectric Response

et al. 2020

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Owing to their efficient photoinduced electron/hole separation, inorganic semiconductors have been extensively considered as some of the most promising materials to convert solar light into electricity or chemical energy. Therefore, there is much interest on developing stable and photoactive materials. Bismuth oxides and, in particular, those built up of [Bi2O2] 2+ layers show an efficient charge separation and, thus, high photocatalytic activities. To explore possible synergetic effect of Bi metallic nodes and the electron-rich linker squarate, the Bi2O2(C4O4) or IEF-3 (IMDEA Energy Framework) was hydrothermally prepared and fully characterized. As determined from X-ray structure, [Bi2O2] 2+ layers are interconnected by squarate ligand, having the Bi local environment a pronounced effect of 6s 2 lone pair. IEF-3 shows a high thermal and chemical robustness under relevant industrial aggressive media. A large panel of physicochemical methods were applied to recognize IEF-3 as an UV-absorbing n-type semiconductor, showing a photocurrent response similar to α-Bi2O3, but offering further possibilities of tuning of to electrochemical properties by modification of the ligand. In such a manner, the well-known compositional and structural versatility of MOFs may be applied in a future for a fine tuning of covalently bonded semiconductor systems.

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“…Bi 2 O 3 has several polymorphs (α, β, δ, γ e ε), being the α an β phase those with greater photocatalytic efficiency, with a direct energy gap in the range of 2.7-3.4 eV [21]. However, certain authors have reported mixed indirect/direct band-gaps in the range of 1.6-2.7 eV for polycrystalline Bi 2 O 3 films comprising the latter polymorphs [22][23][24][25][26]. A high specific surface area is developed in this material 2 of 11 when produced in the form of nanocones [24], which promotes the photocatalytic ability when generating more adsorption sites for pollutants.…”

Section: Introductionmentioning

confidence: 99%

Photocatalytic Bi2O3/TiO2:N Thin Films with Enhanced Surface Area and Visible Light Activity

et al. 2020

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Bi2O3 nanocone films functionalized with an overlayer of TiO2 were deposited by d.c. reactive magnetron sputtering. The aforementioned nanocone structures were formed via a vapour-liquid-solid (VLS) growth, starting from a catalytic bismuth seed layer. The resultant nanocones exhibit an improved surface area, measured by atomic force microscopy, when compared to non-VLS deposition of the same metal oxide. X-ray diffraction texture analysis enabled the determination of the crystallographic β-phase of Bi2O3. A very thin TiO2 overlayer (6 nm thick), undoped and doped with nitrogen, was deposited onto the nanocones template, in order to functionalize these structures with a photocatalytic, self-cleaning, cap material. N-doped TiO2 overlayers increased the selective absorption of visible light due to nitrogen doping in the anatase cell, thus, resulting in a concomitant increase in the overall photocatalytic efficiency.

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Opto-electronic properties of bismuth oxide films presenting different crystallographic phases

Cited by 40 publications

References 45 publications

Effect of substrate temperature on bismuth oxide thin films grown by pulsed laser deposition

Effect of substrate temperature on bismuth oxide thin films grown by pulsed laser deposition

A Semiconducting Bi₂O₂(C₄O₄) Coordination Polymer Showing a Photoelectric Response

Photocatalytic Bi2O3/TiO2:N Thin Films with Enhanced Surface Area and Visible Light Activity

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Opto-electronic properties of bismuth oxide films presenting different crystallographic phases

Cited by 40 publications

References 45 publications

Effect of substrate temperature on bismuth oxide thin films grown by pulsed laser deposition

Effect of substrate temperature on bismuth oxide thin films grown by pulsed laser deposition

A Semiconducting Bi2O2(C4O4) Coordination Polymer Showing a Photoelectric Response

Photocatalytic Bi2O3/TiO2:N Thin Films with Enhanced Surface Area and Visible Light Activity

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A Semiconducting Bi₂O₂(C₄O₄) Coordination Polymer Showing a Photoelectric Response