Opto-Electrical Performance Improvement of Mono c-Si Solar Cells Using Dielectric–Metal–Dielectric (D-M-D) Sandwiched Structure-Based Plasmonic Anti-Reflector

Singh, Hemant Kumar; Arunachalam, Balraj; Kumbhar, Sandeep; Sharma, Pratibha; Solanki, Chetan Singh

doi:10.1007/s11468-015-0049-5

Cited by 7 publications

(4 citation statements)

References 24 publications

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“…The high reflection is attributed to non-continuum of the Ag-UTF surface (see Fig. 7c) which results in backscattering of light in this wavelength range [9,30]. If smoother surface with ultra-thin Ag film can be fabricated, this problem can be resolved to a greater extent [9].…”

Section: Discussionmentioning

confidence: 99%

“…7c) which results in backscattering of light in this wavelength range [9,30]. If smoother surface with ultra-thin Ag film can be fabricated, this problem can be resolved to a greater extent [9]. Here, the gain in current that is shown for D-M-D-based plasmonic anti-reflector is a result of improved anti-reflection effect from surface when compared to a standard 80-nm SiN x -based anti-reflector on non-textured surface.…”

Section: Discussionmentioning

confidence: 99%

“…Here, the gain in current that is shown for D-M-D-based plasmonic anti-reflector is a result of improved anti-reflection effect from surface when compared to a standard 80-nm SiN x -based anti-reflector on non-textured surface. However, the use of D-M-D structure is also expected to give improved passivation effect resulting in an enhancement in open-circuit voltage [9]. Thus, D-M-D-based plasmonic anti-reflector has an added advantage over texturing-based light DMD dielectric-metal-dielectric, V oc open-circuit voltage, J sc short-circuit current density, efficiency trapping structure, especially for thin c-Si-based solar cells, as texturing comparatively lowers the surface passivation due to increased recombination at surface [8].…”

Section: Discussionmentioning

confidence: 99%

“…The solar cell characteristics were simulated for 100-μm thin c-Si solar cell using the experimental reflectance data for standard and D-M-D anti-reflector-based solar cell equivalent geometry. The cell parameters used for simulation were for two scenarios: one which has parameters chosen similar to a typical solar cell condition where series and shunt resistance values taken as commonly observed for 180-μm wafer-based solar cell in typical experimental conditions [9]. Moderate value of minority carrier lifetime (35 μs) is chosen for this case.…”

Section: Next-generation Solar Cell and D-m-d Plasmonicmentioning

confidence: 99%

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D-M-D Plasmonic Anti-Reflector for Next-Generation Thin c-Si Solar Cell Applications

Singh¹,

Mondal²,

Arunachalam³

et al. 2017

Plasmonics

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In this paper, focus is on the light trapping surface in crystalline silicon (c-Si) solar cells where thinner c-Si wafers are expected to be used by industry to reduce the cost of cell manufacturing. Currently, 180-μm-thick wafers are being used for fabricating c-Si solar cells where textured surface coated with silicon nitride (SiN x ) anti-reflector enhances the light trapping. However, surface texturing process roughens the surface and increases the probability of more surface recombination as the wafer thickness decreases. This paper presents an analytical analysis for the development of plasmonic anti-reflector as an alternative to traditional texturization for next-generation thin c-Si solar cells. The analysis indicates that loss in current generation due to Si wafer thickness reduction up to 100 μm from currently used 180 μm would not be more than 0.5 mA/cm 2 if the light trapping structure is excellent. A 100-μm wafer thickness reduction would increase the front escape of light but not more than 1%. PC1D simulation incorporating experimental reflectance from an equivalent 100-μm thin c-Si wafer-based solar cell structure having proposed dielectric-metal-dielectric (D-M-D)-based anti-reflector indicates 1.2-1.3 mA/cm 2 current enhancement when compared with a standard SiN x anti-reflector.

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Section: Discussionmentioning

confidence: 99%