Optimum design and its experimental approach of a-Si/ /poly-Si tandem solar cell

Ma, Wen; Horiuchi, T.; Lim, C.C.; Okamoto, H.; Hamakawa, Yoshihiro

doi:10.1016/0927-0248(94)90099-x

Cited by 8 publications

(2 citation statements)

References 5 publications

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“…The combination of these two materials with distinctly different bandgaps (1Á75 and 1Á1 eV) in tandem cell structures provides for a wide range of spectral response, and hence optimal exploitation of the AM1Á5 conversion efficiency. 96 This is the basis of the 'micromorph' solar cell introduced by IMT Neuchatel. 73 Micromorph cells have at present attained, in the laboratory, slightly over 11% stabilized efficiency and are now being further optimized by an increasing number of research groups.…”

Section: Discussionmentioning

confidence: 99%

Thin‐film silicon solar cell technology

Shah

Schade

Vaněček

et al. 2004

Progress in Photovoltaics

684

350

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This paper describes the use, within p–i–n‐ and n–i–p‐type solar cells, of hydrogenated amorphous silicon (a‐Si:H) and hydrogenated microcrystalline silicon (μc‐Si:H) thin films (layers), both deposited at low temperatures (200°C) by plasma‐assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i‐layers are described. These properties are linked to the microstructure and hence to the i‐layer deposition rate, that in turn, affects throughput in production. The importance of contact and reflection layers in achieving low electrical and optical losses is explained, particularly for the superstrate case. Especially the required properties for the transparent conductive oxide (TCO) need to be well balanced in order to provide, at the same time, for high electrical conductivity (preferably by high electron mobility), low optical absorption and surface texture (for low optical losses and pronounced light trapping). Single‐junction amorphous and microcrystalline p–i–n‐type solar cells, as fabricated so far, are compared in their key parameters (Jsc, FF, Voc) with the [theoretical] limiting values. Tandem and multijunction cells are introduced; the μc‐Si: H/a‐Si: H or [micromorph] tandem solar cell concept is explained in detail, and recent results obtained here are listed and commented. Factors governing the mass‐production of thin‐film silicon modules are determined both by inherent technical reasons, described in detail, and by economic considerations. The cumulative effect of these factors results in distinct efficiency reductions from values of record laboratory cells to statistical averages of production modules. Finally, applications of thin‐film silicon PV modules, especially in building‐integrated PV (BIPV) are shown. In this context, the energy yields of thin‐film silicon modules emerge as a valuable gauge for module performance, and compare very favourably with those of other PV technologies. Copyright © 2004 John Wiley & Sons, Ltd.

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Section: Discussionmentioning

confidence: 99%

Thin‐film silicon solar cell technology

Shah

Schade

Vaněček

et al. 2004

Progress in Photovoltaics

684

350

View full text Add to dashboard Cite

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“…There are two ways to produce Si solar cells with a larger bandgap than crystalline Si. The first possibility is to use hydrogenated amorphous Si (a-Si:H) [3]. This material is already widely used in Si tandem photovoltaics [4,5] but suffers from lightinduced degradation [1,6].…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of silicon nanocrystals embedded in silicon carbide: Comparison of single layers and multilayer structures

Weiss

Schnabel

Reichert

et al. 2015

Applied Surface Science

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The outstanding demonstration of quantum confinement in Si nanocrystals (Si NC) in a SiC matrix requires the fabrication of Si NC with a narrow size distribution. It is understood without controversy that this fabrication is a difficult exercise and that a multilayer (ML) structure is suitable for such fabrication only in a narrow parameter range. This parameter range is sought by varying both the stoichiometric SiC barrier thickness and the Si-rich SiC well thickness between 3 and 9 nm and comparing them to single layers (SL). The samples processed for this investigation were deposited by plasma-enhanced chemical vapor deposition (PECVD) and subsequently subjected to thermal annealing at 1000-1100 degrees C for crystal formation. Bulk information about the entire sample area and depth were obtained by structural and optical characterization methods: information about the mean Si NC size was determined from grazing incidence X-ray diffraction (GIXRD) measurements. Fourier-transform infrared spectroscopy (FTIR) was applied to gain insight into the structure of the Si-C network, and spectrophotometry measurements were performed to investigate the absorption coefficient and to estimate the bandgap E-04. All measurements showed that the influence of the ML structure on the Si NC size, on the Si-C network and on the absorption properties is subordinate to the influence of the overall Si content in the samples, which we identified as the key parameter for the structural and optical properties. We attribute this behavior to interdiffusion of the barrier and well layers. Because the produced Si NC are within the target size range of 2-4 nm for all layer thickness variations, we propose to use the Si content to adjust the Si NC size in future experiments

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Study of large area hydrogenated microcrystalline silicon p-layers for back surface field in crystalline silicon solar cells

Ban

Hanker

Borchert

et al. 2010

Sci. China Technol. Sci.

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A series of hydrogenated microcrystalline silicon (c-Si:H) p-layers for back surface field in crystalline silicon solar cells were deposited on glass substrates by the developed large area (45 cm×45 cm) plasma enhanced chemical vapour deposition processor operating at 13.56 MHz and various values of source gas trimethylboron (TMB) to H2 flowratio. The influence of deposition parameters on the large area p-layer performance was intensively studied, as well as the thin film uniformity, optical, electrical and structural performances by Raman, FTIR, Ellipsometry, etc. Arrhenius and Tauc plots were used to discuss the c-Si:H thin film's activation energy and the defects state distribution. When amorphous-microcrystalline transition state was obtained, the deposited p-doped c-Si:H layers showed specific resistance of 38.3 -1cm-1 at the flowratio of 0.66% and high crystallinity of 45%-50% with no further treatment. The effect of source gas flowratio, deposition rate, and sour ce gas partial pressure on c-Si:H thin film's performance was also investigated

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Optimum design and its experimental approach of a-Si/ /poly-Si tandem solar cell

Cited by 8 publications

References 5 publications

Thin‐film silicon solar cell technology

Thin‐film silicon solar cell technology

Structural and optical properties of silicon nanocrystals embedded in silicon carbide: Comparison of single layers and multilayer structures

Study of large area hydrogenated microcrystalline silicon p-layers for back surface field in crystalline silicon solar cells

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