Optimizing the thermoelectric performance of InGaZnO thin films depending on crystallinity via hydrogen incorporation

Felizco, Jenichi Clairvaux; Uenuma, Mutsunori; Ishikawa, Yasuaki; Uraoka, Yukiharu

doi:10.1016/j.apsusc.2020.146791

Cited by 12 publications

(10 citation statements)

References 36 publications

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“…This suggests that c-axis i.e. (002) aligned HZO leads to improved electrical conductivity, probably owing to the shorter electron path length along the c-plane, as well as diminished grain boundary scattering between grains similarly aligned along the c-axis, as previously reported for c-axis aligned ZnO thin films [39,[41][42][43][44]. Also, this could have arisen from free electron generation caused by substitution of Hf 4+ onto Zn 2+ sites.…”

Section: Effect Of Nominal Percentage Of Dopant Concentrationsupporting

confidence: 69%

“…The MO II peak represents the O 2ions in the oxygen-deficient regions, which can be related to oxygen vacancies. Finally, the surface adsorbed oxygen such as hydroxyl (OH) and carbonyl (COOH) are characterized by the MO III peak [10,[37][38][39]. Prior to the thermal cycle, ZnO showed the highest MO I among the samples (Fig 4a), which is expected as ZnO bonding requires the least amount of energy to form compared to TiO and HfO [36].…”

Section: Effect Of Doping Element On the Thermoelectric Performancementioning

confidence: 99%

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Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO₂/ZnO and TiO₂/ZnO-Sandwiched Multilayer Thin Films

Felizco

Juntunen

Uenuma

et al. 2020

ACS Appl. Mater. Interfaces

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Herein, enhancements in thermoelectric performance, both power factor and thermal stability, are exhibited by sandwiching HfO 2 and TiO 2 layers onto atomic layer deposited ZnO thin films. High temperature thermoelectric measurements from 300 to 450 K revealed an almost two-fold improvement in electrical conductivity for TiO 2 /ZnO (TZO) samples, primarily owing to increase in carrier concentration by Ti doping. On the other hand, HfO 2 /ZnO (HZO) achieved the highest power factor values owing to maintaining Seebeck coefficients comparable to pure ZnO. HZO also exhibited excellent stability after multiple thermal cycles, which has not been previously observed for pure or doped ZnO thin films. Such improvement in both thermoelectric properties and thermal stability of HZO can be attributed to a shift in crystalline orientation from a-axis to c-axis, as well as the high bond dissociation energy of HfO, stabilizing the ZnO structure. These unique properties exhibited by ALD HZO and TZO thin films pave the way for next generation transparent thermoelectric devices.

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Section: Effect Of Nominal Percentage Of Dopant Concentrationsupporting

confidence: 69%

Section: Effect Of Doping Element On the Thermoelectric Performancementioning

confidence: 99%

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO₂/ZnO and TiO₂/ZnO-Sandwiched Multilayer Thin Films

Felizco

Juntunen

Uenuma

et al. 2020

ACS Appl. Mater. Interfaces

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“…Here, is the proportionality constant between the carrier mobility and the conductivity in a high conductivity regime, is the electronic charge and is the carrier density. In high conductivity polaronic systems, this reduced Seebeck slope becomes , and has been observed in several multifunctional conductive oxide-based semiconductors, as well as more recently, in Diketopyrrolopyrrole based conductive polymers 51 – 54 .…”

Section: Resultsmentioning

confidence: 72%

Dynamic self-stabilization in the electronic and nanomechanical properties of an organic polymer semiconductor

et al. 2022

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The field of organic electronics has profited from the discovery of new conjugated semiconducting polymers that have molecular backbones which exhibit resilience to conformational fluctuations, accompanied by charge carrier mobilities that routinely cross the 1 cm2/Vs benchmark. One such polymer is indacenodithiophene-co-benzothiadiazole. Previously understood to be lacking in microstructural order, we show here direct evidence of nanosized domains of high order in its thin films. We also demonstrate that its device-based high-performance electrical and thermoelectric properties are not intrinsic but undergo rapid stabilization following a burst of ambient air exposure. The polymer’s nanomechanical properties equilibrate on longer timescales owing to an orthogonal mechanism; the gradual sweating-out of residual low molecular weight solvent molecules from its surface. We snapshot the quasistatic temporal evolution of the electrical, thermoelectric and nanomechanical properties of this prototypical organic semiconductor and investigate the subtleties which play on competing timescales. Our study documents the untold and often overlooked story of a polymer device’s dynamic evolution toward stability.

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“…40 The O C peak located at 531.9 eV is ascribed to some chemisorbed oxygen components in the form of H 2 O, -CO 3 and OH À groups. 41 Notice that the O 1s spectrum of the NR@NP core-shell film also shifted towards higher binding energies owing to the emergence of a hydrated layer on the ZnO surface. On the other hand, the incorporation of Mg dopant into the ZnO lattice shifted the O 1s spectrum by around 0.5 eV to lower binding energies and apparently caused it to become broader.…”

Section: Resultsmentioning

confidence: 99%

Hierarchical core–shell heterostructure of H₂O-oxidized ZnO nanorod@Mg-doped ZnO nanoparticle for solar cell applications

et al. 2020

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Optimizing the thermoelectric performance of InGaZnO thin films depending on crystallinity via hydrogen incorporation

Cited by 12 publications

References 36 publications

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO₂/ZnO and TiO₂/ZnO-Sandwiched Multilayer Thin Films

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO₂/ZnO and TiO₂/ZnO-Sandwiched Multilayer Thin Films

Dynamic self-stabilization in the electronic and nanomechanical properties of an organic polymer semiconductor

Hierarchical core–shell heterostructure of H₂O-oxidized ZnO nanorod@Mg-doped ZnO nanoparticle for solar cell applications

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Optimizing the thermoelectric performance of InGaZnO thin films depending on crystallinity via hydrogen incorporation

Cited by 12 publications

References 36 publications

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO2/ZnO and TiO2/ZnO-Sandwiched Multilayer Thin Films

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO2/ZnO and TiO2/ZnO-Sandwiched Multilayer Thin Films

Dynamic self-stabilization in the electronic and nanomechanical properties of an organic polymer semiconductor

Hierarchical core–shell heterostructure of H2O-oxidized ZnO nanorod@Mg-doped ZnO nanoparticle for solar cell applications

Contact Info

Product

Resources

About

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO₂/ZnO and TiO₂/ZnO-Sandwiched Multilayer Thin Films

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO₂/ZnO and TiO₂/ZnO-Sandwiched Multilayer Thin Films

Hierarchical core–shell heterostructure of H₂O-oxidized ZnO nanorod@Mg-doped ZnO nanoparticle for solar cell applications