Optimizing the gas sensing characteristics of Co-doped SnO2 thin film based hydrogen sensor

Zhang, Zili; Yin, Chenbo; Yang, Lijun; Jiang, Jin; Guo, Yu‐Guo

doi:10.1016/j.jallcom.2019.01.244

Cited by 65 publications

(24 citation statements)

References 39 publications

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“…164 The process of preparing semiconductor MOx films by sol-gel method is relatively simple. 165 Due to the three-dimensional grid structure generated during the aging process, the prepared film with a high specific surface area is obtained, 166,76 which promotes the efficient and sensitive detection of sensing materials for H 2 .…”

Section: Synthesis Strategymentioning

confidence: 99%

Advanced development of metal oxide nanomaterials for H₂gas sensing applications

Shi

Liu

et al. 2021

Mater. Adv.

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Section: Synthesis Strategymentioning

confidence: 99%

Advanced development of metal oxide nanomaterials for H₂gas sensing applications

Shi

Liu

et al. 2021

Mater. Adv.

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“…For example, the development of materials as thin films on different substrates led to a revolution in several fields, such as catalysts [ 53 ], optical layers [ 54 ], conductive layers [ 55 ], biomedical applications [ 56 ], sensors [ 22 ], and protective layers [ 57 ]. There are many methods that can be used to deposit thin films, including spin coating [ 58 , 59 ], pulsed laser deposition [ 60 , 61 ], dip-coating [ 62 , 63 ], chemical vapor deposition [ 64 , 65 ], evaporation [ 66 , 67 ], and Radio Frequency (RF) magnetron sputtering [ 68 , 69 ].…”

Section: Sensitive Materials Used In Gas Detectionmentioning

confidence: 99%

ZnO Metal Oxide Semiconductor in Surface Acoustic Wave Sensors: A Review

Constantinoiu

Viespe

2020

Sensors

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Surface acoustic wave (SAW) gas sensors are of continuous development interest to researchers due to their sensitivity, short detection time, and reliability. Among the most used materials to achieve the sensitive film of SAW sensors are metal oxide semiconductors, which are highlighted by thermal and chemical stability, by the presence on their surface of free electrons and also by the possibility of being used in different morphologies. For different types of gases, certain metal oxide semiconductors are used, and ZnO is an important representative for this category of materials in the field of sensors. Having a great potential for the development of SAW sensors, the discussion related to the development of the sensitivity of metal oxide semiconductors, especially ZnO, by the synthesis method or by obtaining new materials, is suitable and necessary to have an overview of the latest results in this domain.

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“…Zhang et al [90] reported Co-doped SnO 2 thin films and explored their hydrogen gas sensing properties. The results indicate that the best performance was obtained for a 1 mol% Co-doped SnO 2 thin film at 225°C with a response time of 7 s at 2000 ppm H 2 gas pressure.…”

Section: Oxide Semiconductor-based Thin-film Electronic Devicesmentioning

confidence: 99%

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Al-Ahmadi

2020

Mater. Res. Express

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Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky diode structures because of the presence of the oxide layer. This layer increases Schottky barrier heights and reduced leakage currents. It also compared the MOS and metal-semiconductor structures. Recent advances in the development of MOS Schottky diodes are then discussed, with a focus on aspects such as insulating materials development, doping effects, and manufacturing technologies, along with potential device applications ranging from hydrogen gas sensors to photodetectors. Device structures, including oxide semiconductor thin film-based devices, p-type and n-type oxide semiconductor materials, and the optical and electrical properties of these materials are then discussed with a view toward optoelectronic applications. Finally, potential future development directions are outlined, including the use of thinfilm nanostructures and high-k dielectric materials, and the application of graphene as a Schottky barrier material.Low contact resistance is required for good ohmic contact and high-speed semiconductor devices. In contrast, an ideal Schottky junction acts like an ideal diode, where high current only flows in the forward-biased direction and offers infinite resistance in the opposite direction [11]. The type of junction can be changed by varying different metals and the doping level of the semiconductor [12]. The core focus of this study is on the Schottky diode for its use in the switching devices, which reduces the current leakage and power consumption [13].This review is categorized into fives sections. Following the introductory section, the comparison of MS and MOS devices is provided in the second section, while important equations related to MOS Schottky Diode are described for carrier transport mechanism in the third section. The fourth section highlights the recent progress of MOS devices and their applications in the fourth section. Lastly, section five briefly sums up the reviewed findings and indicates the future direction of the work. ReviewGenerally, the metal oxide/insulator semiconductor (MOS/MIS) structure is obtained by inserting an insulator layer between a metal and a semiconductor [14]. In the MOS structure, an oxide layer separates the metal and semiconductor from each other. For instance, at the metal/insulator interfaces, there is a continuous distribution of surface states with energies located in the bandgap of the semiconductor [15]. The intermediate oxide layer helps prevent the diffusion of the metal into the semiconductor but also alleviates the electric field reduction in MIS Schottky diodes. The interfacial layer helps determine the device characteristics, performance, and stability [16]. Karabulut et al [17] explains that the MOS or MIS capacitor is the most effective device for semiconductor surfaces based on their practical...

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Optimizing the gas sensing characteristics of Co-doped SnO2 thin film based hydrogen sensor

Cited by 65 publications

References 39 publications

Advanced development of metal oxide nanomaterials for H₂gas sensing applications

Advanced development of metal oxide nanomaterials for H₂gas sensing applications

ZnO Metal Oxide Semiconductor in Surface Acoustic Wave Sensors: A Review

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

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Optimizing the gas sensing characteristics of Co-doped SnO2 thin film based hydrogen sensor

Cited by 65 publications

References 39 publications

Advanced development of metal oxide nanomaterials for H2gas sensing applications

Advanced development of metal oxide nanomaterials for H2gas sensing applications

ZnO Metal Oxide Semiconductor in Surface Acoustic Wave Sensors: A Review

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

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Product

Resources

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Advanced development of metal oxide nanomaterials for H₂gas sensing applications

Advanced development of metal oxide nanomaterials for H₂gas sensing applications