Optimizing n-ZnO/p-Si heterojunctions for photodiode applications

Hydrothermal growth of ZnO nanostructures

“…To maintain a stable structure, the polar surfaces generally have facets or exhibit massive surface reconstructions, but ZnO ± (0001) surfaces are exceptions: they are atomically flat, stable and exhibit no reconstruction [1,2]. Efforts to understand the superior stability of the ZnO ± (0001) polar surfaces are at the forefront of research in today's surface physics [3][4][5][6]. The other two most commonly observed facets for ZnO are {2110} and {0110}, which are non-polar and have lower energy than the {0001} facets.…”

“…ZnO is transparent to visible light and its conductivity can be increased through doping. ZnO nanostructures have a wide range of high technology applications like surface acoustic wave filters [1], photonic crystals [2], photodetectors [3], light emitting diodes [4], photodiodes [5], gas sensors [6], optical modulator waveguides [7], solar cells [8,9] and varistors [10]. ZnO is also receiving a lot of attention because of its antibacterial property and its bactericidal efficacy has been reported to increase as the particle size decreases [11].…”

The influence of resistance and carrier concentration on the output voltage of a ZnO nanogenerator

“…The research has led to the development of numerous ZnO thin film and nanowire based devices ranging from surface acoustic wave filters [1], photonic crystals [2], light emitting diodes [3], photodetectros [4], photodiodes [5], gas sensors [6] and solar cells [7], to name a few. This is due to the unique properties of ZnO including a wide bandgap (3.37 eV) as well as specific electrical and optoelectrical properties of the II-VI semiconductor group [2][3][4].…”

Effect of Heat Treatment Method on Properties of ZnO Thin Films Deposited by RF Magnetron Sputtering

“…ZnO, II-VI Type compound semiconductor, is a direct band gap semiconductor that has the crystal structure of wurzite, a hexagonal form, like GaN, and possesses a wide band gap of 3.37 eV at room temperature. Since it has structural and optical properties similar with GaN, which is currently the most used semiconductor in LED and LD of short wave-length region, numerous researches are being carried out on the development of more stable and economic ZnO based LED [1][2][3]. Generally, ZnO takes the form of nonstoichiometry compound with the occurrences of defects such as interstitial Zn ion (Zn i…”