Optimized Reading Window for Crossbar Arrays Thanks to Ge-Se-Sb-N-based OTS Selectors

Verdy, Anthonin; Bernard, M.; Garrione, J.; Bourgeois, G.; Cyrille, Marie-Claire; Nolot, Emmanuel; Castellani, N.; Noé, Pierre; Socquet-Clerc, C.; Magis, T.; Sassine, Gilbert; Molas, G.; Navarro, G.; Nowak, E.

doi:10.1109/iedm.2018.8614686

Cited by 20 publications

(19 citation statements)

References 9 publications

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“…This is also very instructive regarding the forming step issue in OTS devices. It is usually observed in selector devices that, after the first OTS cycle, the electronic properties of the OTS evolve with, for instance, a decrease in V th , requiring a so-called forming or firing step before OTS device operation (23,24). The atomistic view of OTS given here by simulation shows that such an effect could be reasonably attributed to the result of a structural relaxation of the glass induced by the electronic excitation.…”

Section: Ots Modelmentioning

confidence: 74%

“…The latter enabled the advent of high-density 3D nonvolatile resistive memories because of the association of a PCM element and an OTS selector, both based on chalcogenide materials (4,5,13). In that context, we have shown that tailoring the amorphous structure of GS-based thin films by N and Sb incorporation produces highly performant OTS materials, as demonstrated in selector devices (16)(17)(18)24). Because of the investigation of amorphous structure of prototypical chalcogenide thin films coupled with analysis of their electronic properties and their OTS behavior upon electric field application, we made it possible to draw design rules to optimize further the OTS properties of amorphous chalcogenides.…”

Section: Resultsmentioning

confidence: 99%

“…Among all compounds measured here, GSSN exhibits outstanding OTS performances featuring all properties required for selector applications (16)(17)(18)24) while being fully compatible with standard CMOS (complementary metal-oxide semiconductor) fabrication processes. Among these properties, the endurance of GSSN has been shown to be excellent, as the OTS behavior is maintained over at least up to 10 9 cycles (17,18).…”

Section: Electrical Propertiesmentioning

confidence: 99%

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Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

et al. 2020

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Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently the source of a real technological breakthrough in the field of data storage memories. This breakthrough was achieved because of the successful 3D integration of so-called OTS selector devices with innovative phase-change memories, both based on chalcogenide materials. This paves the way for storage class memories as well as neuromorphic circuits. We elucidate the mechanism behind OTS switching by new state-of-the-art materials using electrical, optical, and x-ray absorption experiments, as well as ab initio molecular dynamics simulations. The model explaining the switching mechanism occurring in amorphous OTS materials under electric field involves the metastable formation of newly introduced metavalent bonds. This model opens the way for design of improved OTS materials and for future types of applications such as brain-inspired computing.

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Section: Ots Modelmentioning

confidence: 74%

Section: Resultsmentioning

confidence: 99%

Section: Electrical Propertiesmentioning

confidence: 99%

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Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

et al. 2020

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“…We have already demonstrated that diffusion issues in rellurium-based thin layer excludes tantalum from the list of suitable candidates, 16 when amorphous carbon features, by contrast, more appropriate characteristics. 17 Here, we used PP-TOFMS to investigate the impact of a Ge-based capping layer on the stoichiometry of GeSbTe material after thermal annealing. incorporation of PCM in more confined structure, thereby enhancing the sensitivity of the final device to surface effects.…”

Section: Methodsmentioning

confidence: 99%

Accelerating the development of phase‐change random access memory with in‐fab plasma profiling time‐of‐flight mass spectrometry

Nolot

Mazel

Barnes

et al. 2020

Surface & Interface Analysis

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We demonstrate the potential of using plasma profiling time-of-flight mass spectrometry (PP-TOFMS) to accelerate process developments for phase-change random access memory (PCRAM) applications, which require advanced materials with composition-driven properties. We assess the performances of PP-TOFMS for the chemical depth-profiling of GeSbTe phase change materials, first after deposition steps to investigate the top surface layer and the incorporation of silicon into the amorphous matrix, then after the thermal annealing step to refine in situ capping strategies, and finally in close loop with etching process steps. Comparison of reference-free semiquantitative PP-TOFMS analysis based on ion beam ratio with Rutherford backscattering spectrometry shows remarkable agreement (10% relative). PP-TOFMS proves to be a fast screening tool, which allows process monitoring and selection of samples that indeed need more complex analysis. K E Y W O R D S chemical depth profile, metrology, phase change memory, plasma profiling time-of-flight mass spectrometry

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“…A transistor is used as current limiter. Magnetron sputtered Ge-Se-Sb-N (GSSN) alloy is used as OTS, sandwiched between two Carbon electrodes to improve endurance [6]. 5nm-thick ALD HfO 2 is integrated with a 5nm PVD Ti scavenging layer for the OxRAM device [7].…”

Section: Technological Detailsmentioning

confidence: 99%

Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization

Lopez

Hudeley

Grenouillet

et al. 2021

2021 IEEE International Reliability Physics Symposium (IRPS)

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1S1R operation behavior and read margin variability are elucidated for the first time to our knowledge. To this aim, an extensive experimental study is performed on HfO2 OxRAM technology co-integrated with GSSN-based Ovonic Threshold Selector (OTS) in 4kb memory arrays, supported by deep theoretical analysis. A semi-analytical dynamic model is developed for selector operation, describing OTS switching variability. The voltage repartition in the 1S1R stack during the switching operation is clarified. The 1S1R read voltage margin is quantified statistically, based on OTS switching voltage dispersion, OxRAM variability and margin degradation during endurance. Based on this theoretical and experimental study, 1S1R figures of merit (overall functionality, reliability, and maximum bank size) are optimized based on OTS and OxRAM devices' features and programming conditions.

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Optimized Reading Window for Crossbar Arrays Thanks to Ge-Se-Sb-N-based OTS Selectors

Cited by 20 publications

References 9 publications

Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

Accelerating the development of phase‐change random access memory with in‐fab plasma profiling time‐of‐flight mass spectrometry

Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization

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