Optimized performance III-nitride-perovskite-based heterojunction photodetector via asymmetric electrode configuration

Abstract

Enhanced perovskite/GaN-based broad-band photodetector is demonstrated by optimizing electrode configurations. The detection capability of the optimized perovskite/GaN structure was extended to UV range with fast response and high responsivity.

The influence of Fermi level position at the GaN surface on carrier transfer across the MAPbI3/GaN interface

“…28, 29 and comparable with ref. 27 Significantly longer fall time observed for 405 nm illumination may be ascribed to anomalous-like transient photocurrent behavior detected at below-GaN illumination regime. Such a shape of photocurrent has been already observed for organic part-containing semiconductors.…”

“…6(c) and (d), respectively. The rise time ( t on – counted from 10% to 90% of the maximum current) and fall time ( t off – from 90% to 10% of the maximum current) 27 are calculated for each illumination wavelength and depicted in the figures. Obtained rise times are 72 ms and 63 ms, while fall times are 62 ms and 110 ms for 325 nm and 405 nm, respectively.…”

Broadband Photodetector for Ultraviolet to Visible Wavelengths Based on the BA2PbI4/GaN Heterostructure

“…5 Mitra et al reported on a heterojunction structure of a CH 3 NPbI 3 MAPI/p-type GaN PD, which displayed a broadband spectrum by introducing wide-band-gap semiconductors. 11 A high-stability self-powered perovskite photodetector based on a CH 3 NH 3 PbI 3 /GaN heterojunction was fabricated, expanding the response wavelength of a perovskite PD to the UV region owing to the wide band gap of GaN. 32 In this work, we report on a BA 2 PbI 4 /GaN heterojunction PD, which exhibits a broadband photoresponse from the UV to visible range and is capable of good rectifying behavior in dark conditions.…”

“…8−10 Recently, OIPs have shown great application potential in broadband photoresponse detection. 11,12 However, stability issues in the OIP materials, particularly in the 3D structure, can block their applications in the development of devices. 13−15 In order to reduce the adverse effect of instability on the device performance, it has been shown that reducing the dimensionality can improve material stability as well as creating new functionalities in these materials.…”

“…Up to now, photodetectors (PDs) have been given tremendous attention owing to their applications in flame detection, intelligent infrared imaging, and satellite positioning. − Organic–inorganic hybrid perovskites (OIPs) that include 3D or layered 2D structures have been regarded as promising candidates for photoelectric materials owing to their excellent photoelectric properties, such as high light absorption coefficients (10 4 –10 5 cm –1 ), high carrier mobility (exceeding 10 cm 2 V –1 s –1 ), long carrier diffusion lengths (1 μm and greater), low trap densities (lower than 10 16 cm –3 ), and tunable direct band gaps (1.5–3.1 eV) . Particularly, the response wavelength range of PDs is directly associated with the band gap of semiconductors and the band gap of OIPs can be adjusted by composition variation, so organic–inorganic hybrid perovskites are a very suitable material for the preparation of PDs. − Recently, OIPs have shown great application potential in broadband photoresponse detection. , However, stability issues in the OIP materials, particularly in the 3D structure, can block their applications in the development of devices. − In order to reduce the adverse effect of instability on the device performance, it has been shown that reducing the dimensionality can improve material stability as well as creating new functionalities in these materials. , Two-dimensional OIPs have been regarded as promising photodetection-active semiconductor materials as a result of their excellent photoelectric properties and remarkable environmental stability due to the protection offered by organic ligands . Two-dimensional perovskites have the general formula of (BA) 2 (MA) n −1 Pb n I 3 n +1 (BA = C 4 H 9 NH 3 and MA = CH 3 NH 3 ), where n is the number of layers.…”