Optimized energy storage performance by a depolarization field in BaMn_0.01Ti_0.99O₃/Na_0.5Bi_0.5TiO₃ multilayer thin films

Abstract

Ferroelectric thin film capacitors have attracted more and more attention because of their excellent energy storage performance and ability suffice to miniaturize and lighten electronic equipment need. In this study,...

Enhanced Energy Storage Performance in Na0.5Bi0.5TiO3-Sr0.7Bi0.2TiO3 Relaxor Ferroelectric Thin Films by Entropy Design

“…Figure 4c shows the summarized energy storage properties of some representative NBT-based or SBT-based thin films reported in recent years. 3,9,11,15,27,28,34,36 By contrast, the NBT-SBT thin films in this work have relatively high energy storage performance.…”

“…(a) Schematic diagram to roughly illustrate the variation of relaxor behavior, the grain sizes, and the P – E hysteresis loops with the increased entropy as the SBT content increases. (b) Correlation between W rec and S config ( R ) in the NBT-SBT and other previous thin films. ,,, (c) Comparison of the W rec and η of the 0.4NBT-0.6SBT thin film with those of the other reported lead-free thin films. ,,,,,,, …”

“…Two dielectric anomalies, a low-temperature T s (regarded as a relaxor characteristic 31 )and a high-temperature T m (corresponding to the maximum ε r ), can be found in the thin films of 11,27,34,35 (c) Comparison of the W rec and η of the 0.4NBT-0.6SBT thin film with those of the other reported lead-free thin films. 3,9,11,15,27,28,34,36 ACS Applied Electronic Materials x = 0.15, 0.3, 0.45, and 0.6. But, T s disappears and only one anomaly T m can be observed when x ≥ 0.75.…”

“…For instance, Sun et al reported that Sm doping in BaZr 0.2 Ti 0.8 O 3 relaxor ferroelectric thin films can achieve an enhanced W rec (40.42 J/cm 2 ) and η (85.03%) due to the increased dipole variety and the enhanced polarization . A high energy storage density of 47.6 J/cm 3 and an efficiency of 65.6% are achieved in the Mn doped BiFeO 3 -Sr 0.7 Bi 0.2 TiO 3 relaxor ferroelectric thin films . Besides, Pan et al obtained an ultrahigh energy storage density of 112 J/cm 3 in the BiFeO 3 -BaTiO 3 -SrTiO 3 relaxor ferroelectric thin films by constructing the coexistence of nanodomains with multiple morphologies .…”

“…14 A high energy storage density of 47.6 J/cm 3 and an efficiency of 65.6% are achieved in the Mn doped BiFeO 3 -Sr 0.7 Bi 0.2 TiO 3 relaxor ferroelectric thin films. 15 Besides, Pan et al obtained an ultrahigh energy storage density of 112 J/cm 3 in the BiFeO 3 -BaTiO 3 -SrTiO 3 relaxor ferroelectric thin films by constructing the coexistence of nanodomains with multiple morphologies. 1 From a microscopic viewpoint, the main difference between the ferroelectrics and relaxor ferroelectrics relies on the distinctively different domain structures and that the long-range ferroelectric orders are broken in relaxor ferroelectrics, which has been mentioned in many papers and confirmed by advanced transmission analysis.…”