Optimized circuit design for flexible 8-bit RFID transponders with active layer of ink-jet printed small molecule semiconductors

Kjellander, Bkc Charlotte; Smaal, Wiljan T. T.; Myny, Kris; Genoe, Jan; Dehaene, Wim; Heremans, Paul; Gelinck, Gerwin

doi:10.1016/j.orgel.2012.12.027

Cited by 71 publications

(47 citation statements)

References 26 publications

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“…[26] The P(NDI2OD-T2) n-type showed ambipolar behaviour clearly seen in the eleveated off-currents in the saturation regime (Fig. 5b), which has been observed by other authors.…”

Section: 1supporting

confidence: 84%

Bottom-Gate Complementary Inverters on Plastic With Gravure-Printed Dielectric and Semiconductors

Vaklev

Yang

Muir

et al. 2015

IEEE Trans. Electron Devices

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“…[26] The P(NDI2OD-T2) n-type showed ambipolar behaviour clearly seen in the eleveated off-currents in the saturation regime (Fig. 5b), which has been observed by other authors.…”

Section: 1supporting

confidence: 84%

Bottom-Gate Complementary Inverters on Plastic With Gravure-Printed Dielectric and Semiconductors

Vaklev

Yang

Muir

et al. 2015

IEEE Trans. Electron Devices

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“…[1][2][3][4][5][6][7] Such progress coupled with the high compatibility of solution-processable organic semiconductors with plastic or metal foil substrates makes them ideal candidates for cost-effective, mechanically flexible electronic devices for various applications, such as printed radio frequency identification tags for item-level tagging, drivers for flexible displays, wearable electronics, distributed sensors, and integrated, nonvolatile memory devices. [8][9][10][11][12][13][14][15][16][17][18][19][20] [21][22][23][24][25] Such remarkable p-channel mobilities, obtained in devices with fairly promising shelf-life and operational stabilities, have been demonstrated with conjugated polymers based on new building units, such as diketopyrrolopyrrole, [24,26,27] isoindigo, [28,29] and indacenodithiophene. [30] Similar efforts have been devoted to improving n-channel polymer semiconductors, with the performances of n-type devices still lagging behind their p-channel counterparts.…”

Section: Introductionmentioning

confidence: 99%

High‐Mobility Naphthalene Diimide and Selenophene‐Vinylene‐Selenophene‐Based Conjugated Polymer: n‐Channel Organic Field‐Effect Transistors and Structure–Property Relationship

Sung

Luzio

Park

et al. 2016

Adv Funct Materials

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Interdependence of chemical structure, thin-film morphology, and transport properties is a key, yet often elusive aspect characterizing the design and development of high-mobility, solution-processed polymers for large-area and flexible electronics applications. There is a specific need to achieve >1 cm 2 V −1 s −1 field-effect mobilities (μ) at low processing temperatures in combination with environmental stability, especially in the case of electron-transporting polymers, which are still lagging behind hole transporting materials. Here, the synthesis of a naphthalene-diimide based donor-acceptor copolymer characterized by a selenophene vinylene selenophene donor moiety is reported. Optimized field-effect transistors show maximum μ of 2.4 cm 2 V −1 s −1 and promising ambient stability. A very marked film structural evolution is revealed with increasing annealing temperature, with evidence of a remarkable 3D crystallinity above 180 °C. Conversely, transport properties are found to be substantially optimized at 150 °C, with limited gain at higher temperature. This discrepancy is rationalized by the presence of a surface-segregated prevalently edge-on packed polymer phase, dominating the device accumulated channel. This study therefore serves the purpose of presenting a promising, high-electron-mobility copolymer that is processable at relatively low temperatures, and of clearly highlighting the necessity of specifically investigating channel morphology in assessing the structure-property nexus in semiconducting polymer thin films.

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“…Table 1 provides examples of values reported during the last 12 years for a range of technologies and materials. [ 4,5,[12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31] From this list, only six reports [ 18,22,[26][27][28]31 ] appear to meet the above benchmark and in two of these cases [ 18,22 ] the high frequency/short stage delay criterion was only achieved with supply voltages ≥50 V.…”

Section: Introductionmentioning

confidence: 99%

“…[13][14][15] This refl ects the generally higher mobilities of vacuum-evaporated small-molecules [ 12 ] compared with solutionprocessed small-molecules. [ 16,17 ] Other performance-degrading features of solution R2R-processes include a relatively thick dielectric layer and relatively poor resolution. The former leads to high operating voltages.…”

mentioning

confidence: 99%

Organic Ring Oscillators with Sub‐200 ns Stage Delay Based on a Solution‐Processed p‐type Semiconductor Blend

Watson

Brown

Carter

et al. 2016

Adv Elect Materials

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the manufacturing processes divide naturally into two general approaches i.e., solution-processing and vacuum processing. In the former approach some or all transistor and circuit elements are deposited from solution and holds out the promise of low-cost, high-volume roll-to-roll (R2R) manufacture of circuits using, for example, inkjet [ 7 ] or gravure printing. [ 8 ] On the other hand, processes requiring vacuum evaporation of one or more component, or photolithography and dry-etching are more suited to batch-processing.Progress has been, and continues to be made, in applying mass-printing R2R processes [ 9 ] with a range of logic circuits being demonstrated [ 10 ] albeit based on singlewalled carbon nanotubes as the active material. High-speed metal patterning and barrier layer deposition are commercially used processes. R2R circuit fabrication based entirely on vacuum evaporation is, therefore, feasible. [ 11 ] For example, saturated-load unipolar ring oscillators (ROs) were produced in a R2R-compatible environment. [ 12 ] Although a stage delay of 46 µs was achieved at a high supply voltage, circuit performance was compromised by a nonoptimal design purposely limited to the resolution and registration capability of a high-speed metal printing process. Nevertheless, the stage delay achieved was much shorter than previously reported for ROs produced using all-solution mass-printing processes ( Table 1 ) . [13][14][15] This refl ects the generally higher mobilities of vacuum-evaporated small-molecules [ 12 ] compared with solutionprocessed small-molecules. [ 16,17 ] Other performance-degrading features of solution R2R-processes include a relatively thick dielectric layer and relatively poor resolution. The former leads to high operating voltages. The latter reduces operating speed by restricting the source-drain gap, i.e., the channel length, L , of the OTFTs to a minimum of about 30-40 µm. Achieving a resolution below ≈10 µm to improve device speed poses a signifi cant near-term challenge for mass-printing processes. Relatively poor registration between different patterned layers is a further problem leading to undesirable parasitic effects. [ 12 ] It is not surprising, therefore, that the signifi cant improvements in organic circuit performances have been demonstrated using the higher resolution approaches derived from silicon technology. At the most basic level, this is confi ned to patterning source-drain electrodes by photolithography to achieve channel lengths of 5 µm High-frequency ring oscillators with sub-microsecond stage delay fabricated from spin-coated fi lms of a specially formulated small-molecule/host-polymer blend are reported. Contacts and interconnects are patterned by photolithography with plasma etching used for creating vias and removing excess material to reduce parasitic effects. The characteristics of transistors with 4.6 µm channel length scale linearly with channel width over the range 60-2160 µm. Model device parameters extracted using Silvaco's Universal Organic Thin Film Transistor...

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Optimized circuit design for flexible 8-bit RFID transponders with active layer of ink-jet printed small molecule semiconductors

Cited by 71 publications

References 26 publications

Bottom-Gate Complementary Inverters on Plastic With Gravure-Printed Dielectric and Semiconductors

Bottom-Gate Complementary Inverters on Plastic With Gravure-Printed Dielectric and Semiconductors

High‐Mobility Naphthalene Diimide and Selenophene‐Vinylene‐Selenophene‐Based Conjugated Polymer: n‐Channel Organic Field‐Effect Transistors and Structure–Property Relationship

Organic Ring Oscillators with Sub‐200 ns Stage Delay Based on a Solution‐Processed p‐type Semiconductor Blend

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