Optimized carrier confinement in deep-ultraviolet light-emitting diodes with AlInGaN/AlInN superlattice electron blocking layer

Jamil, Tariq; Usman, Muhammad

doi:10.1016/j.mseb.2022.115638

Cited by 10 publications

(3 citation statements)

References 28 publications

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“…The turn‐on voltage is reduced mainly due to the improved carrier injection, especially the hole injection into the active region. [ 37 ] As well, the forward voltage decrease is mainly attributed to the fact that the average Al component of the multigradient EBL is lower than that of the monolayer EBL.…”

Section: Resultsmentioning

confidence: 99%

Performance Improvement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Multigradient Electron Blocking Layer and Triangular Last Quantum Barrier

Cao

et al. 2023

Physica Status Solidi (a)

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The performance improvements of AlGaN‐based deep ultraviolet light‐emitting diodes (DUV‐LEDs) with multigradient electron blocking layer (EBL) and triangular last quantum barrier (LQB) are investigated. The results show that the maximum internal quantum efficiency (IQE) is improved by 44.9% and light output power (LOP) is improved by 58.1% at 200 A cm−2, exhibiting a tremendous improvement compared to the conventional structure. These improvements are mainly attributed to the fact that both multigradient EBL and triangular LQB can generate negative polarization charges in the graded composition layer, which leads to a significant increase in hole concentration compared to the conventional EBL and LQB structures. Meanwhile, the multigradient EBL can transform the conventional triangular barrier into an arc‐shaped barrier, increasing the electron potential barrier height and decreasing the hole potential barrier height. This unique design suppresses electron leakage and enhances hole injection, leading to a significant enhancement of the IQE and alleviation of the efficiency droop.

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Section: Resultsmentioning

confidence: 99%

Performance Improvement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Multigradient Electron Blocking Layer and Triangular Last Quantum Barrier

Cao

et al. 2023

Physica Status Solidi (a)

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“…19 An EBL with a graded composition EBL and hole blocking layer (HBL) to improve electron confinement and hole injection capabilities has also been reported. 20 Similarly, the quaternary AlInGaN last quantum barrier (LQB), 21 AlInGaN short-period supper lattice EBL, 22 and AlInGaN superlattice EBL 23 have been reported in the literature. Thin AlInGaN have been reported to successfully suppress the carrier escape.…”

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confidence: 87%

Thin Quaternary Layer and Staggered Electron Blocking Layers for Improved Ultraviolet Light-Emitting Diodes

Rasheed

Usman

Mustafa

et al. 2023

ECS J. Solid State Sci. Technol.

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We have carried out numerical investigations of AlGaN-based ultraviolet light-emitting diodes (UV LEDs). We have shown that the unequal carrier distribution, which is typical in III-N LEDs, is mitigated in the active region. To improve the performance, we have used a thin AlInGaN quaternary layer (QL) between the final quantum barrier (FQB) and the electron blocking layer (EBL). We have also compared the results with a staggered or step-graded electron blocking layer (EBL) which is known to shown enhanced device output. The hole insertion has been found to greatly improve in all the multiquantum wells (MQWs) of our numerically designed LEDs. The radiative recombination rate has been found to be enhanced by ~82% in comparison to reference LED.

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“…Moreover, the carrier injection is improved due to the higher conduction band offset compared to AlGaN [10] . The use of thin layers based on AlInN has been studied pointing out that thinner layers assisted not only the blocking of electrons but also enhanced the hole injection through tunneling [15,16] .…”

Section: Introductionmentioning

confidence: 99%

Metal-modulated epitaxy of Mg-doped Al_0.80In_0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

Solís-Cisneros,

Hernández-Gutiérrez,

Campos-González

et al. 2024

J. Semicond.

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This work reports the growth and characterization of p-AlInN layers doped with Mg by plasma-assisted molecular beam epitaxy (PAMBE). AlInN was grown with an Al molar fraction of 0.80 by metal-modulated epitaxy (MME) with a thickness of 180 nm on Si(111) substrates using AlN as buffer layers. Low substrate temperatures were used to enhance the incorporation of indium atoms into the alloy without clustering, as confirmed by X-ray diffraction (XRD). Cathodoluminescence measurements revealed ultraviolet (UV) range emissions. Meanwhile, Hall effect measurements indicated a maximum hole mobility of 146 cm2/(V∙s), corresponding to a free hole concentration of 1.23 × 1019 cm−3. The samples were analyzed by X-ray photoelectron spectroscopy (XPS) estimating the alloy composition and extracting the Fermi level by valence band analysis. Mg-doped AlInN layers were studied for use as the electron-blocking layer (EBL) in LED structures. We varied the Al composition in the EBL from 0.84 to 0.96 molar fraction to assess its theoretical effects on electroluminescence, carrier concentration, and electric field, using SILVACO Atlas. The results from this study highlight the importance and capability of producing high-quality Mg-doped p-AlInN layers through PAMBE. Our simulations suggest that an Al content of 0.86 is optimal for achieving desired outcomes in electroluminescence, carrier concentration, and electric field.

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Optimized carrier confinement in deep-ultraviolet light-emitting diodes with AlInGaN/AlInN superlattice electron blocking layer

Cited by 10 publications

References 28 publications

Performance Improvement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Multigradient Electron Blocking Layer and Triangular Last Quantum Barrier

Performance Improvement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Multigradient Electron Blocking Layer and Triangular Last Quantum Barrier

Thin Quaternary Layer and Staggered Electron Blocking Layers for Improved Ultraviolet Light-Emitting Diodes

Metal-modulated epitaxy of Mg-doped Al_0.80In_0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

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Optimized carrier confinement in deep-ultraviolet light-emitting diodes with AlInGaN/AlInN superlattice electron blocking layer

Cited by 10 publications

References 28 publications

Performance Improvement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Multigradient Electron Blocking Layer and Triangular Last Quantum Barrier

Performance Improvement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Multigradient Electron Blocking Layer and Triangular Last Quantum Barrier

Thin Quaternary Layer and Staggered Electron Blocking Layers for Improved Ultraviolet Light-Emitting Diodes

Metal-modulated epitaxy of Mg-doped Al0.80In0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

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Metal-modulated epitaxy of Mg-doped Al_0.80In_0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes