Optimized Annealing Temperature of Ti/4H-SiC Schottky Barrier Diode

Bok, Yun Seung; Han, Kim Jeong; Hwan, Kang Ye; Hoon, Lee Jung; Kım, Kihyun; Kim, Sung‐Su; Sik, Jung Eun; Kang, In-Ho; Kyu, Shin Hoon; Heon, Yang Chang

doi:10.1166/jnn.2017.14067

Cited by 4 publications

(2 citation statements)

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“…In the literature, thermal annealing effects on non-irradiated 4H-SiC SBDs (i.e. changes in electrical character-istics and trap signatures) are extensively analyzed [11,12,[16][17][18][19][20][21][22][23][24][25][26][27][28][29] . However, the annealing effects on gamma irradiated 4H-SiC SBD characteristics have not yet been examined.…”

Section: Introductionmentioning

confidence: 99%

Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics

Raja

Murty

2019

J. Semicond.

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Thermal annealing effects on gamma irradiated Ni/4H-SiC Schottky barrier diode (SBD) characteristics are analyzed over a wide range of temperatures (400–1100 °C). The annealing induced variations in the concentration of deep level traps in the SBDs are identified by thermally stimulated capacitance (TSCAP). A little decrease in the trap density at EC – 0.63 eV and EC – 1.13 eV is observed up to the annealing temperature of 600 °C. Whereas, a gamma induced trap at EC – 0.89 eV disappeared after annealing at 500 °C, revealing that its concentration (< 1013 cm−3) is reduced below the detection limit of the TSCAP technique. The electrical characteristics of irradiated SBDs are considerably changed at each annealing temperature. To understand the anomalous variations in the post-annealing characteristics, the interface state density distribution in the annealed SBDs is extracted. The electrical properties are improved at 400 °C due to the reduction in the interface trap density. However, from 500 °C, the electrical parameters are found to degrade with the annealing temperature because of the increase in the interface trap density. From the results, it is noted that the rectifying nature of the SBDs vanishes at or above 800 °C.

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Section: Introductionmentioning

confidence: 99%

Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics

Raja

Murty

2019

J. Semicond.

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“…[12][13][14][15][16] Traditionally, thermal annealing has been used to mitigate defects to obtain improved electrical properties of semiconductor devices. [17][18][19][20] This process involves heating a material to an elevated temperature and then cooling it down. The purpose is to increase the atomic mobility within the material, which can help eliminate defects such as dislocations, vacancies, or impurities.…”

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confidence: 99%

Rejuvenation of degraded Zener diodes with the electron wind force

Rahman,

Al-Mamun,

Glavin

et al. 2024

Appl. Phys. Express

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In this study, we explore the rejuvenation of a Zener diode degraded by high electrical stress, leading to a leftward shift, and broadening of the Zener breakdown voltage knee, alongside a 57% reduction in forward current. We employed a non-thermal annealing method involving high-density electric pulses with short pulse width and low frequency. The annealing process took < 30 seconds at near-ambient temperature. Raman spectroscopy supports the electrical characterization, showing enhancement in crystallinity to explain the restoration of the breakdown knee followed by improvement in forward current by ~ 85%.

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Thermal annealing studies in epitaxial 4H-SiC Schottky barrier diodes over wide temperature range

Raja

Murty

2018

Microelectronics Reliability

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Optimized Annealing Temperature of Ti/4H-SiC Schottky Barrier Diode

Cited by 4 publications

References 0 publications

Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics

Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics

Rejuvenation of degraded Zener diodes with the electron wind force

Thermal annealing studies in epitaxial 4H-SiC Schottky barrier diodes over wide temperature range

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