Optimized Aluminum Reflector for Enhancement of UVC Cathodoluminescence Based-AlGaN Materials with Carbon Nanotube Field Emitters

Abstract

The far ultraviolet C (UVC) light sources based on carbon nanotube (CNT) field emitters as excitation sources have become promising light sources for sterilization, disinfection, and water purification. However, the low light extraction efficiency of UVC–CNT light sources still hinders the practical application of these structures. Herein, we report an optimized aluminum (Al) reflector to enhance the light extraction efficiency of UVC–CNT light sources. Optical analysis of UVC-CNT light sources covered by the Al reflectors with various thicknesses ranging from 30 to 150 nm was performed to realize the optimized reflector. The UVC-CNT light sources exhibit the highest light extraction efficiency when the Al reflector layer has an optimized thickness of 100 nm. For comparison, the cathodoluminescence (CL) spectra were recorded for UVC–CNT light sources with and without the optimized Al reflector. The measured light output power and the estimated power efficiency of the UVC–CNT light-source-tube with Al reflector were enhanced by about 27 times over the reference. This enhancement is mainly attributed to the outstanding reflection effect of the Al reflector.

Modeling specific capacitance of carbon nanotube-based supercapacitor electrodes by machine learning algorithms

“…Ongoing research efforts continue to explore the optimization of CNT synthesis, electrode fabrication techniques, and device engineering to unlock the full potential of CNTs in SC applications. Overall, the use of CNT-based electrodes in SCs opens the door to high-performance energy storage systems with increased efficiency and stability, paving the way for developments in a number of industries, including portable electronics, electric cars, and renewable energy storage [11][12][13][14]. We use machine learning (ML) algorithms to optimize the influencing parameters and forecast the electrochemical capacitance, taking into account the multitude of factors that affect the performance of CNT-based electrodes.…”

The Mechanisms of AlGaN Device Buffer Layer Growth and Crystalline Quality Improvement: Restraint of Gallium Residues, Mismatch Stress Relief, and Control of Aluminum Atom Migration Length

“…AlGaN materials have wide-ranging applications in the ultraviolet (UV) optoelectronic field, such as UV laser diodes (UV LDs) and UV light emission diodes (UV LEDs) [1][2][3][4][5][6][7][8]. Cathodoluminescence-based AlGaN materials with carbon nanotube field emitters are also promising light sources for sterilization, disinfection, and water purification [9]. For UV LDs, when the emission wavelength is below 360 nm, a high-quality AlGaN buffer layer with Al composition higher than 15% will be needed in many nitride device applications [10][11][12][13][14][15].…”