Optimized Al-doped TiO₂ gate insulator for a metal-oxide-semiconductor capacitor on a Ge substrate

Abstract

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulators (GIs) were examined for the Ge-based metal-oxide-semiconductor field effective transistor (MOSFET) application.

Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2 Ferroelectric Film

“…[ 10–13 ] Furthermore, it was recently elucidated that the interfacial SiO 2 could be unnecessary even in high‐performance CMOS devices when the high‐ k layer was optimized. [ 14 ] Therefore, it is anticipated that implementing MFSFET with the doped‐HfO 2 FE layer, which may not invoke the problems mentioned above of MFISFET devices, can be possible without sacrificing the FET performance, i.e., no increase in D it .…”

Mesh Bias Controlled Synthesis of TiO2 and Al0.74Ti0.26O3 Thin Films by Mist Chemical Vapor Deposition and Applications as Gate Dielectric Layers for Field-Effect Transistors

“…The capacitance of the Al/a-TiO 2 /n-Si capacitors increased markedly with increasing V m , accompanied by a small shift to the negative bias region, suggesting that the positive fixed charge is stored at the TiO 2 /n-Si interface. 37 Conversely, compared to the a-Al 0.74 Ti 0.26 O 3 /n-Si interface at V m = 0 kV, the rise of capacitance is steep and shift to small biases when V m = 3 and 9 kV, suggesting that the interface trap density (D it ) was suppressed efficiently.…”

Enhanced Electrical Properties of an Al-Doped TiO2 Dielectric Film on a TiN Electrode by Adopting an Atomic Layer Deposited Ru Interlayer

“…In this regard, Al-doped TiO 2 (ATO) dielectric films with a rutile phase and a Ru electrode have attracted a great deal of attention . TiO 2 , which is a representative high- k material, is undergoing extensive research in the microelectronics field for various applications such as a high- k dielectric gate, a resistance-switching material, and a capacitor dielectric material. − The rutile-structured TiO 2 thin film grown by atomic layer deposition (ALD) could have a dielectric constant ( k ) as high as ∼110, which is more than 3 times higher than that of the currently used ZrO 2 films. However, its lower band gap (∼3.1 eV) poses concerns about the leakage current.…”