Optimization of ZnSe growth on miscut GaAs substrates by molecular beam epitaxy

Song, J. S.; Chang, Jae-Soo; Oh, D. C.; Kim, J.J.; Cho, M.W.; Makino, Hisao; Hanada, Takashi; Yao, Takafumi

doi:10.1016/s0022-0248(02)02129-2

Cited by 25 publications

(8 citation statements)

References 26 publications

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“…Because of these good and unique properties, there are many different growth techniques used to prepare Zn-Se films, for example atomic layer epitaxy (ALE), molecular beam epitaxy (MBE), organo-metallic chemical vapor deposition (OMCVD), thermal evaporation under vacuum, solution growth spray pyrolysis etc. [18][19][20][21][22]. In this study, the vacuum evaporation technique was used to prepare ZnSe thin films due to its simplicity; low cost reproducibility, and this technique is suitable for producing high-quality films [23,24].…”

Section: Introductionmentioning

confidence: 99%

Structural, Swanepoel’s method, optical and electrical parameters of vacuum evaporated Zn50Se50 thin films

Alwany¹,

Youssef²,

Algradee³

et al. 2023

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Thin films of Zn50Se50 were prepared by the vacuum evaporation technique on glass substrates. The influence of annealing temperature (Tann.) on the structural and optical properties of ZnSe polycrystalline films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical transmittance T (λ). The crystalline phases that were found in the Zn50Se50 thin films are ZnSe, Se and Zn. The refractive index (n) and the thickness of the films (d) were calculated using Swanepoel’s method for the films annealed at (423 K). The mechanism of optical absorption follows the rule of direct transition. The values of band gap (EG) were found to decrease from about 2.933 to 2.635 eV with the increasin of the Tann. from 300 to 423 K. Urbach energy (EU) was calculated and found to the increase by increasing Tann. The dispersion of the n was discussed in terms of the single-oscillator Wemple and DiDomenico model. The Arrhenius formula was used to discuss the electrical conductivity (σDC), activation energy (ΔE) and preexponential factor (σo).

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Section: Introductionmentioning

confidence: 99%

Structural, Swanepoel’s method, optical and electrical parameters of vacuum evaporated Zn50Se50 thin films

Alwany¹,

Youssef²,

Algradee³

et al. 2023

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“…The advantages of using ZnSe over CdS include its non-toxicity, its wider energy band gap than CdS, and its ability to provide a better lattice matching with CIGS absorber layer. ZnSe film has been prepared by various growth techniques, such as molecular beam epitaxy (MBE) [6], metalorganic chemical vapour deposition (MOCVD) [7], atomic layer epitaxy (ALE) [8], electro-deposition [9], chemical bath deposition [10], photochemical [11], spray pyrolysis [12], and thermal evaporation [13]. In addition, advances in low temperature epitaxial growth techniques such as MBE and MOCVD have been used to obtain high quality II-VI compound semiconductor films.…”

Section: Introductionmentioning

confidence: 99%

Influence of thickness on the microstructural, optoelectronic and morphological properties of nanocrystalline ZnSe thin films

Balu¹,

Nagarethinam²,

Ahamed³

et al. 2010

Materials Science and Engineering: B

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“…It was found that we could only observe an extremely strong ZnSe (004) peak with a full-width-half-maximum (FWHM) of 21.5 arcsec. Such a value is much smaller than the 92.7 arcsec FWHM observed from the ZnSe heteroepitaxial layer grown on GaAs substrates [9]. This extremely small FWHM indicates that crystal quality of the ZnSe epitaxial layers could indeed be improved significantly by using ZnSe substrates.…”

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confidence: 72%

ZnSe homoepitaxial MSM photodetectors with transparent ITO contact electrodes

Lin

Chang

et al. 2005

IEEE Trans. Electron Devices

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Determination of deep ultrathin equivalent oxide thickness (EOT) from measuring flat-band C-V curve," IEEE Trans. Electron Devices, vol. 49, no. 4, pp. 695-698, Apr. 2002. [6] M.-J. Jeng and J.-G. Hwu, "Thin-gate oxides prepared by pure water anodization followed by rapid thermal densification," IEEE Electron DeAbstract-We report the homoepitaxial growth of ZnSe layers on ZnSe substrates by molecular beam epitaxy (MBE). It was found that we can only observe an extremely strong ZnSe (004) x-ray peak with a full-width-athalf-maximum of 21.5 arcsec, which is much smaller than that observed from ZnSe grown on GaAs substrates. Photoluminescence and Hall measurement also indicate that the quality of our homoepitaxial ZnSe layers is good. ZnSe-based homoepitaxial metal-semiconductor-metal photodetectors with transparent indium-tin-oxide (ITO) contact electrodes were also fabricated. It was found that although ITO transparent contact electrodes can result in large photon absorption and large photocurrents, the low Schottky barrier height between ITO and homoepitaxial ZnSe would also result in relatively large dark currents. With an incident wavelength of 450 nm and a 1-V applied bias, it was found that the maximum responsivity is about 0.13 A/W, which corresponds to a quantum efficiency of 35%. Furthermore, it was found that the detector responsivity drops by more than two orders of magnitude across the cutoff region. Index Terms-Homoepitaxy, ITO, metal-semiconductor-metal (MSM) photodetector, molecular beam epitaxy (MBE), ZnSe.Short-wavelength blue and ultraviolet (UV) photodetectors are important devices that can be used in various commercial and military applications [1], [2]. For example, these blue/UV photodetectors can be used in space communications, ozone layer monitoring and flame detection. Currently, light detection in the blue/UV region still uses Si photodiodes. However, the most sensitive wavelength of Si photodiodes is not located in the blue/UV region, since room-temperature bandgap energy of Si is only 1.2 eV. Thus, the responsivity of Si photodiodes is low in the blue/UV region. With the advent of optoelectronic devices fabricated on wide direct bandgap materials, it becomes possible to produce high-performance solid-state photodetector arrays sensitive in the blue/UV region. For example, GaN-based photodetectors are already commercially available [3]. ZnSe is another wide direct bandgap material that is sensitive in the blue/UV region [4], [5]. Although various ZnSe-based blue/UV photodetectors were already been demonstrated, these ZnSe-based photodetectors were all grown on top of the closely lattice matched GaAs substrates. It is known that the slight lattice mismatch (0.27% at room temperature) between ZnSe and GaAs will still generate a huge amount of defects when we grow a very thick ZnSe epitaxial layer on top of the GaAs substrate [6]. The defects generated at the ZnSe-GaAs interface will significantly reduce the efficiency of the ZnSe-based photodetectors. One possible way to solve such a pr...

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Optimization of ZnSe growth on miscut GaAs substrates by molecular beam epitaxy

Cited by 25 publications

References 26 publications

Structural, Swanepoel’s method, optical and electrical parameters of vacuum evaporated Zn50Se50 thin films

Structural, Swanepoel’s method, optical and electrical parameters of vacuum evaporated Zn50Se50 thin films

Influence of thickness on the microstructural, optoelectronic and morphological properties of nanocrystalline ZnSe thin films

ZnSe homoepitaxial MSM photodetectors with transparent ITO contact electrodes

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