Optimization of wurtzite GaN-based Gunn diode as terahertz source

Lee, Wen Zhao; Ong, Duu Sheng; Choo, Kan Yeep

doi:10.1109/smelec.2018.8481290

Cited by 2 publications

(4 citation statements)

References 12 publications

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Section: Model and Electron Drift Velocitymentioning

confidence: 99%

“…It is well demonstrated that the conventional analytical-band MC method is suitable for modelling of transferred electron devices [30][31][32][33] due to its advantages of taking into account the electron transport dynamics and various scattering mechanisms. An efficient analytical-band MC model [31] has been developed to reproduce the electron drift velocity characteristics of GaN in the basal plane (Γ-M) [24]. In order to evaluate the optimal performance of GaN Gunn diode, in this work, the MC model is used to reproduce the electron drift velocity characteristics of GaN in the c-axis direction (Γ-A) as shown in figure 9 of [24] with a larger peak velocity.…”

Section: Model and Electron Drift Velocitymentioning

confidence: 99%

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Monte Carlo evaluation of GaN THz Gunn diodes

Lee

Ong

Choo

et al. 2021

Semicond. Sci. Technol.

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The performances of GaN-based Gunn diodes have been studied extensively for more than two decades, however, the diverging electron drift velocity characteristics employed in these studies merit a review of the potential of GaN Gunn diodes as THz sources. A self-consistent analytical-band Monte Carlo (MC) model capable of reproducing the electron drift velocity characteristics of GaN predicted theoretically by the first-principles full band MC model is used in this work to evaluate systematically the performance of GaN Gunn diodes in transit time mode. The optimal fundamental frequency of a sustainable current oscillation under a DC bias is determined as a function of the length of its transit region. The MC model predicts a GaN Gunn diode with a transit length of 500 nm capable of operating at frequencies up to 625 GHz with an estimated output power of 3.0 W. An MC model takes into account the effect of defects in order to replicate the much lower electron drift velocity characteristics derived from experimental work and predicts THz signal generation of 2.5 W at highest sustainable operating frequency of 326 GHz in a Gunn diode with a transit length of 700 nm.

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Section: Model and Electron Drift Velocitymentioning

confidence: 99%

Section: Model and Electron Drift Velocitymentioning

confidence: 99%

Monte Carlo evaluation of GaN THz Gunn diodes

Lee

Ong

Choo

et al. 2021

Semicond. Sci. Technol.

Self Cite

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“…Another approach is described in [7] showing the modulation of the domain mode in the two-dimensional electron gas (2DEG) channel of GaN-based high electron mobility transistor (HEMT)-like Gunn diodes by adjustment the electron concentration of the 2DEG near the cathode side and display an explicit numerical study on the GaN-based planar Gunn diode, and demonstrate that the electric field at the cathode side plays an important role on the formation and modulation of the electron domain Gunn diode. In [8], [9], a detailed study about the GaN-based Gunn diode has been presented using an ensemble Monte-Carlo method. The drift velocity, electron density, and electric field distribution as a function of time in the device are illustrated under direct current (DC) and alternating current (AC) bias condition.…”

Section: Introductionmentioning

confidence: 99%

“…W. Z. Lee et al showed in [9] that the Gunn diode with 550 nm transit length is capable to achieve a 500 GHz signal of 2.61 W with 2.27% efficiency under 22 V DC and 5 V RF condition. In [10], an efficient method to improve the crystal quality of GaN Gunn diode with AlGaN hot electron injecting layer on SiC substrate was reported.…”

Section: Introductionmentioning

confidence: 99%

Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies

et al. 2020

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For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and fieldplate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V measurement of the THz diode showed the ohmic and the Gunn effect region with high forward current of 0.65 A and high current drop of approximately 100 mA for a small ring diode width w d of 1.5 µm with 600 nm effective diode height h d at a small threshold voltage of 8.5 V. This THz diode worked stable due to good passivation as protection from electro-migration and ionisation between the electrodes as well as a better heat sink to the GaN substrate and large side-contacts. The diodes can provide for this thickness a fundamental frequency in the range of 0.3 -0.4 THz with reliable characteristics.

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Optimization of wurtzite GaN-based Gunn diode as terahertz source

Cited by 2 publications

References 12 publications

Monte Carlo evaluation of GaN THz Gunn diodes

Monte Carlo evaluation of GaN THz Gunn diodes

Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies

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