Optimization of top coupling grating for very long wavelength QWIP based on surface plasmon

The grating coupled GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) are integrated onto Si substrates using metal wafer bonding and epitaxial lift-off process. The 1 μm depth of hexagonal hole structure of grating was formed. The energy-dispersive x-ray spectroscopy results confirmed that the grating coupled QWIP is successfully mounted on an Si substrate. By evaluating the Raman spectra, PL, and surface roughness of bonded QWIP samples, the authors found that the grating does not induce any change in the optical or structural characteristics of actual QWIP layers. The dark current–voltage characteristics show a nearly identical dark current level between grating coupled QWIP and nongrating QWIP. The photocurrent spectrum shows that the peak photocurrent intensity of grating coupled QWIP is about 16 times higher than that of nongrating QWIP. This indicates that the grating effectively contributes to an increase in the light absorption of QWIP, showing large room for improvement of QWIP performance by further optimization of a grating structure.

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Fabrication of grating coupled GaAs/AlGaAs quantum well infrared photodetector on an Si substrate

Kim

Ahn

Wasilewski

2019

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Two-dimensional plasmonic grating for increased quantum efficiency in midwave infrared nBn detectors with thin absorbers

Jackson¹,

Nolde²,

Kim³

et al. 2018

Opt. Express

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We demonstrate a strategy for increasing the operating temperatures of nBn midwave infrared (MWIR) focal plane arrays, based on the use of two-dimensional plasmonic gratings to enhance the quantum efficiency (QE) of structures with very thin absorbers. Reducing the absorber volume correspondingly reduces the dark current in a diffusion-limited photodiode, while light trapping mediated by the plasmonic grating increases the net absorbance to maintain high QE. The plasmonically enhanced nBn MWIR sensors with absorber thicknesses of only 0.5 μm exhibit peak internal QEs as high as 57%, which enables a 5-fold reduction in dark current. Numerical simulations indicate the potential for further improvement.

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Optimization of top coupling grating for very long wavelength QWIP based on surface plasmon

Cited by 2 publications

References 12 publications

Fabrication of grating coupled GaAs/AlGaAs quantum well infrared photodetector on an Si substrate

Fabrication of grating coupled GaAs/AlGaAs quantum well infrared photodetector on an Si substrate

Two-dimensional plasmonic grating for increased quantum efficiency in midwave infrared nBn detectors with thin absorbers

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