Optimization of the synthesis and characterizations of chemical bath deposited Cu2S thin films

Allouche, N. Kamoun; Nasr, Tarak Ben; Guasch, C.; Kamoun‐Turki, Najoua

doi:10.1016/j.crci.2010.04.012

Cited by 18 publications

(8 citation statements)

References 26 publications

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“…The Cu2S thin films deposited at pH = 10.4 had the corresponding optimum crystallinity structure exhibits to the crystalline peaks that reported above . These patterns are in good agreement with earlier reported studies (Allouche et al, 2010). The broad hump in figures (4 and 5) is due to the glass substrate.…”

Section: Structure Properties Of Cu2s Thin Filmssupporting

confidence: 93%

Effects of Deposition Time And PH on The Characterization of Chemically Synthesized Composite Nano-Wires of Cu2S Thin Films

Ahmed

Mohammed

Khalil

2021

SJUOZ

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The chemical bath deposition technique (CBD) had used for depositing Cu2S thin films on the glass substrates. It found that thickness and deposition rate were significantly dependent on deposition parameters (deposition time and pH value). XRD data indicates that at different deposition times and pH values are given amorphous structure except for the deposited thin film of (8hours) and, pH of (10.4) the structure was crystalline. The morphology of the deposited thin films remarkably changed as the deposition time increased. Optical transmittance measurements illustrate that transmission of the thin films decreases from 93.27% for a deposition time of 4 hours to 81.73 for deposition time of 10 hours and, the maximum transmission rate of the films is 95.21 % with pH=8.4 and decreases to 28.39 % with pH=11.4. Also, optical studies revealed that Cu2S thin film with direct energy bandgap decreased from 3.04 to 2.78 eV as deposition time increased and from 3.09 to 2.32 eV as pH increased.

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Section: Structure Properties Of Cu2s Thin Filmssupporting

confidence: 93%

Effects of Deposition Time And PH on The Characterization of Chemically Synthesized Composite Nano-Wires of Cu2S Thin Films

Ahmed

Mohammed

Khalil

2021

SJUOZ

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“…The obtained value of the carrier concentration was ∼10 19 cm −3 , which is comparable with the earlier reports, confirming the thick film to be semiconducting in nature. Mobility and the conductivity of the as‐deposited copper sulfide film were higher as compared to many of the previous reports . This enhanced electron transport may be due to many factors including the crystal structure and the presence of nanostructured channels in the film well connected to each other.…”

Section: Resultsmentioning

confidence: 61%

Facile In Situ Growth of Nanostructured Copper Sulfide Films Directly on FTO Coated Glass Substrates as Efficient Counter Electrodes for Quantum Dot Sensitized Solar Cells

et al. 2017

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We report a facile chemical solution deposition method for fabricating nanostructured copper sulfide film directly on fluorine doped tin oxide (FTO) coated glass substrates and demonstrate its use as efficient counter electrodes in quantum dot based solar cells. A typical quantum dot sensitized solar cell with CdS sensitized photo-anode using this counter electrode shows~25% improvement in the power conversion efficiency when compared to the reference device assembled with conventional thermally evaporated gold/FTO counter electrode. The superior electrocatalytic activity of the copper sulfide electrode is also substantiated by potentiostatic IÀV curves and electrochemical impedance spectroscopy.

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“…Figure 7 shows two linear portions which lead to two band gap values. And related to the XRD analysis, the band gap of 1.62 eV attributes to the CNTS phase and the second band gap of 2.06 eV can be correspond to Na 2 S phase (~ 2 eV) or to Cu 2 S phase (~ 2.37 eV) present in film [21,22]. To conclude, the CNTS band gap energy of 1.62 eV is near with the optimal values for solar cell applications reported by other authors [4,13,23].…”

Section: Optical Analysismentioning

confidence: 99%

One-step spray of Cu2NiSnS4 thin films as absorber materials for photovoltaic applications

Dridi

Bitri

Mahjoubi

et al. 2020

J Mater Sci: Mater Electron

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A simple one-step «Spray Pyrolysis» technique was developed for preparing Cu 2 NiSnS 4 (CNTS) thin film followed by an annealing treatment process. Originally, the spray technique was successfully used to deposit the thin film onto glass substrate at 250 °C for 60 min spray duration. Again, the deposited thin film was annealed in a sulfur atmosphere at a temperature of 500 °C during 30 min. The sulfured thin film exhibits (111), (220) and (311) orientations correspond well to the cubic CNTS structure and other impurity compounds. The SEM data exhibit a uniform, rough and compact topography of CNTS thin films with an average-thickness of 1.36 µm. The absorption coefficient is found to be higher than 10 4 cm −1 in the visible region while the direct band energy of 1.62 eV, which is eminently suitable for use as an absorber in the solar cell. The complex impedance diagrams indicate the decrease of resistance by increasing temperature, which attributes to a semiconductor behavior. The close values of activation energies 0.63 and 0.54 eV determined from both angular frequency and DC conductivity indicate that the carrier transport mechanism is thermally activated.

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Optimization of the synthesis and characterizations of chemical bath deposited Cu2S thin films

Cited by 18 publications

References 26 publications

Effects of Deposition Time And PH on The Characterization of Chemically Synthesized Composite Nano-Wires of Cu2S Thin Films

Effects of Deposition Time And PH on The Characterization of Chemically Synthesized Composite Nano-Wires of Cu2S Thin Films

Facile In Situ Growth of Nanostructured Copper Sulfide Films Directly on FTO Coated Glass Substrates as Efficient Counter Electrodes for Quantum Dot Sensitized Solar Cells

One-step spray of Cu2NiSnS4 thin films as absorber materials for photovoltaic applications

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