Optimization of the Sensitivity of a Double-Dot Magnetic Detector

Macucci, Massimo; Marconcini, Paolo; Roche, Stephan

doi:10.3390/electronics9071134

Cited by 3 publications

(4 citation statements)

References 30 publications

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“…For the evaluation of the transmission matrix, we use a scattering-matrix approach similar to the method we have previously adopted for the simulation of GaAs/AlGaAs devices [ 47 ]. We partition the ribbon into a collection of slices, each one with a width equal to that of the ribbon and a length along the transport direction x depending on the chosen solution scheme, so that a particle injected from the entrance lead has to pass through all the slices to reach the exit lead (see Figure 1 ).…”

Section: Methodsmentioning

confidence: 99%

Transport Simulation of Graphene Devices with a Generic Potential in the Presence of an Orthogonal Magnetic Field

Marconcini

Macucci

2022

Nanomaterials

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The effect of an orthogonal magnetic field is introduced into a numerical simulator, based on the solution of the Dirac equation in the reciprocal space, for the study of transport in graphene devices consisting of armchair ribbons with a generic potential. Different approaches are proposed to reach this aim. Their efficiency and range of applicability are compared, with particular focus on the requirements in terms of model setup and on the possible numerical issues that may arise. Then, the extended code is successfully validated, simulating several interesting magnetic-related phenomena in graphene devices, including magnetic-field-induced energy-gap modulation, coherent electron focusing, and Aharonov–Bohm interference effects.

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Section: Methodsmentioning

confidence: 99%

Transport Simulation of Graphene Devices with a Generic Potential in the Presence of an Orthogonal Magnetic Field

Marconcini

Macucci

2022

Nanomaterials

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“…Regarding the magnetic field

(orthogonal to the plane

of the ribbon, where x and y are the transport and transverse directions, respectively), its effect on transport was simulated by introducing a vector potential

, such that

, in the Dirac equation. In particular, among the infinite forms of vector potential

corresponding to the magnetic field

, in most of our simulations we used the Landau gauge

[ 66 ].…”

Section: Methodsmentioning

confidence: 99%

Effects of A Magnetic Field on the Transport and Noise Properties of a Graphene Ribbon with Antidots

Marconcini

Macucci

2020

Nanomaterials

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We perform a numerical simulation of the effects of an orthogonal magnetic field on charge transport and shot noise in an armchair graphene ribbon with a lattice of antidots. This study relies on our envelope-function based code, in which the presence of antidots is simulated through a nonzero mass term and the magnetic field is introduced with a proper choice of gauge for the vector potential. We observe that by increasing the magnetic field, the energy gap present with no magnetic field progressively disappears, together with features related to commensurability and quantum effects. In particular, we focus on the behavior for high values of the magnetic field: we notice that when it is sufficiently large, the effect of the antidots vanishes and shot noise disappears, as a consequence of the formation of edge states crawling along the boundaries of the structure without experiencing any interaction with the antidots.

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“…Λ 型 V型 M型 Kaverzin et al [53] √, T=60 K, V b =?, D √, T=40 K, V b =?, D √, T=40 K, V b =?, H 2 O吸附, D Heller et al [41] --√, RT, V b <5 mV, D √, RT, V b <5 mV, D Lin el al. [40] --√, RT, V b =100 mV, Bi , D √, RT, V b =100 mV, D Pal el al.…”

Section: 参考文献特征谱型mentioning

confidence: 99%

“…; 构造交换噪声结合了Mc Whorter 模型以及统一噪声模型, 考虑载流子数涨落及载流子隧穿后散射截面变化引起的迁移率涨落. 但通过计算, Ghosh团队 [52] 认为配置噪声中的载流子数 Kaverzin等 [53] 利用二氧化硅基底石墨烯样品…”

Section: 基于石墨烯平台的1/f噪声模型研究进展unclassified

Review on 1/f noise and its research progress in two-dimensional material graphene

Ying¹,

Si-lin²,

Zhang³

et al. 2023

Acta Phys. Sin.

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The noise is the signal. Low-frequency noise with a 1/f-type spectral density (1/f noise) has been observed in a wide variety of systems. There’s plenty of physical processes under the 1/f noise phenomenon. It is not only a useful tool for scientific research, but also a quantitative probe for the performance of electronic devices. From the general mathematical forms to physical processes, this paper summarizes the 1/f noise models. Based on Markov process and diffusion process, two general mathematical models of 1/f noise are introduced respectively. On this basis, tracing the development history, several typical physical models are described, including Mc Whorter model, Hooge model, Voss-Clarker model, Dutta-horn model, interference model and unified Hung model. The rise of the two-dimensional material graphene offers unique opportunities for the mechanism research on 1/f noise. In the fact of the cloudy and even contradictory conclusions from different reports, this paper combs the consensus accepted widely. An analysis model based on three-level classification for the graphene low-frequency noise study is built, which divides the noise into intrinsic background 1/f noise, 1/f-like noise and Lorentz-like noise. Typical research on the related mechanism at each level are analyzed, and the dominant mechanisms are summarized. Further we focus on the gate-modulated characteristic spectrum shape of 1/f noise from different reported experiments, which may be a key to the material internal scattering mechanism and charge distribution. The experimental measurements show that the characteristic shape is variable, and mainly exists in three forms: V-type, Ʌ-type and M-type. Through the comparative analysis of graphene cleanliness, bias current (voltage) and other experimental parameters, the possible causes of the complexity and variability of the characteristic shape are analyzed. It shows that the main reason may be that the experimental parameters are not strictly controlled, and the selection of measuring point is unreasonable. In order to capture accurate noise characteristics to clearly reveal the noise mechanism, this paper puts forward the standard 1/f noise measurement paradigm to guide the effective research on graphene 1/f noise and distinguishing the intrinsic and extrinsic noise. The standard paradigm includes three processes. Firstly, prepare suspended graphene samples. Then remove the surface contamination by methods such as current annealing, which is followed by the test of the relationship curve between the 1/f noise amplitude and the bias voltage or current. Based on this curve, suitable test point can be selected for different measurement scheme. The proposed standard intrinsic background 1/f noise measurement paradigm may hold the promise to clarify and reveal the characteristics of graphene 1/f noise.

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Optimization of the Sensitivity of a Double-Dot Magnetic Detector

Cited by 3 publications

References 30 publications

Transport Simulation of Graphene Devices with a Generic Potential in the Presence of an Orthogonal Magnetic Field

Transport Simulation of Graphene Devices with a Generic Potential in the Presence of an Orthogonal Magnetic Field

Effects of A Magnetic Field on the Transport and Noise Properties of a Graphene Ribbon with Antidots

Review on 1/<i>f</i> noise and its research progress in two-dimensional material graphene

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