Optimization of the Normal Mode Spectrum of Linear Ion Crystals in Paul Traps for EIT Cooling Using an Optical Lattice

Akopyan, L. A.; Zalivako, I. V.; Lakhmanskiy, Kirill; Khabarova, K. Yu.; Kolachevsky, Nikolai N.

doi:10.1134/s0021364020210043

Cited by 9 publications

(2 citation statements)

References 31 publications

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“…cooling can be ensured by standard methods, e.g., by Doppler or sympathetic laser cooling [21,22]. For cooling to the ground vibrational state, side-band cooling method [23] and the electromagnetic-induced transparency method [24][25][26][27] are successfully used. The condition (1) imposed on the detection time and the second pulse duration complicates the experimental implementation of the ion memristor.…”

Section: Three-level Schemes In the 171 Yb + Ionmentioning

confidence: 99%

Model of Coupled Quantum Memristors Based on a Single Trapped 171Yb+ Ion

Stremoukhov,

Forsh,

Khabarova

et al. 2024

Jetp Lett.

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Section: Three-level Schemes In the 171 Yb + Ionmentioning

confidence: 99%

Model of Coupled Quantum Memristors Based on a Single Trapped 171Yb+ Ion

Stremoukhov,

Forsh,

Khabarova

et al. 2024

Jetp Lett.

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“…For example, Doppler or sympathetic laser cooling [30,31] allows for the achievement of ion temperatures on the order of several mK or even lower. For cooling down to the ground vibrational state, side-band cooling [32] and EIT cooling [33][34][35][36] are successfully used. The most difficult requirement in the experimental implementation of an ion-based memristor is the condition (13).…”

Section: Three-level Scheme For the Case Of 171 Yb + Ionmentioning

confidence: 99%

Proposal for Trapped-Ion Quantum Memristor

Stremoukhov

Форш

Khabarova

et al. 2023

Entropy

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A quantum memristor combines the memristive dynamics with the quantum behavior of the system. We analyze the idea of a quantum memristor based on ultracold ions trapped in a Paul trap. Corresponding input and output memristor signals are the ion electronic levels populations. We show that under certain conditions the output/input dependence is a hysteresis curve similar to classical memristive devices. This behavior becomes possible due to the partial decoherence provided by the feedback loop, which action depends on previous state of the system (memory). The feedback loop also introduces nonlinearity in the system. Ion-based quantum memristor possesses several advantages comparing to other platforms—photonic and superconducting circuits—due to the presence of a large number of electronic levels with different lifetimes as well as strong Coulomb coupling between ions in the trap. The implementation of the proposed ion-based quantum memristor will be a significant contribution to the novel direction of “quantum neural networks”.

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