Optimization of the coherence properties of diamond samples with an intermediate concentration of NV centers

Rubinas, Olga R.; Soshenko, Vladimir V.; Bolshedvorskii, Stepan V.; Zeleneev, Anton I.; Galkin, A.S.; Тарелкин, С. А.; Troschiev, S. Yu.; Vorobyov, Vadim; Сорокин, В. Н.; Суханов, А. А.; Vins, Victor G.; Smolyaninov, Andrey N.; Акимов, А. В.

doi:10.1016/j.rinp.2021.103845

Cited by 13 publications

(22 citation statements)

References 22 publications

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“…In previous studies, limited ranges of nitrogen concentrations for specific interests have been mostly discussed, for example recently Edmonds et al [37] have investigated CVD diamonds containing ∼10-15 ppm P1 centers and shown the reproducibility of their growth method by studying a large amount of samples; Rubinas et al [38] have studied HPHT diamonds with over ∼0.5-3 ppm P1 concentration range; and earlier Nöbauer et al [39] have presented a study of HPHT diamonds with P1 densities of 200 ppm and CVD diamonds with P1 densities of 1 ppm. In this work, we have grown CVD diamond series with a varying nitrogen flow over four orders of magnitude, leading to a broad range of P1 densities from 0.2 to 20 ppm.…”

Section: Introductionmentioning

confidence: 99%

Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications

et al. 2022

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The nitrogen-vacancy (NV) center in diamond is a promising quantum system for magnetometry applications exhibiting optical readout of minute energy shifts in its spin sub-levels. Key material requirements for NV ensembles are a high NV- concentration, a long spin coherence time and a stable charge state. However, these are interdependent and can be difficult to optimize during diamond growth and subsequent NV creation. In this work, we systematically investigate the NV center formation and properties in bulk chemical vapor deposition (CVD) diamond. The nitrogen flow during growth is varied by over 4 orders of magnitude, resulting in a broad range of single substitutional nitrogen concentrations of 0.2-20~parts per million. For a fixed nitrogen concentration, we optimize electron-irradiation fluences with two different accelerated electron energies, and we study defect formation via optical characterizations. We discuss a general approach to determine the optimal irradiation conditions, for which an enhanced NV concentration and an optimum of NV charge states can both be satisfied. We achieve spin-spin coherence times T2 ranging from 45.5 to 549 μs for CVD diamonds containing 168 to 1~parts per billion NV- centers, respectively. This study shows a pathway to engineer properties of NV-doped CVD diamonds for improved sensitivity.

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Section: Introductionmentioning

confidence: 99%

Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications

et al. 2022

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“…Monocrystalline samples of IIa-type diamond with NV color centers created by means of high pressure and high temperature synthesis (HPHT) are currently available on the market [28][29][30] . Spectroscopic characteristics of NV − centers in diamond were investigated in 26 ; however, stimulated emission or lasing at NV centers in diamond have not been achieved in that work.…”

Section: Introductionmentioning

confidence: 99%

NV– diamond laser

et al. 2021

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For the first time, lasing at NV− centers in an optically pumped diamond sample is achieved. A nanosecond train of 150-ps 532-nm laser pulses was used to pump the sample. The lasing pulses have central wavelength at 720 nm with a spectrum width of 20 nm, 1-ns duration and total energy around 10 nJ. In a pump-probe scheme, we investigate lasing conditions and gain saturation due to NV− ionization and NV0 concentration growth under high-power laser pulse pumping of diamond crystal.

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“…To efficiently enhance the NV concentration in the diamond, subsequent irradiation and annealing treatments are commonly conducted, which have been discussed in previous works [31,32]. Multiple irradiation types are commonly applied for vacancy creation in diamonds, including irradiation with electrons, ions, high-energy photons or neutrons [45][46][47].…”

Section: Nv-ensembles After E-beam Irradiationmentioning

confidence: 99%

“…PL measurements are often applied with different calibration methods, for example comparing the NV-PL intensity with a single NV center [29,57], or calibrating the NV-PL with the absorption cross-section (as applied in this work) [30]. The UV-Vis absorption spectrum at cryogenic temperature has also been used to determine NV − and NV 0 concentrations respectively [31,32]. EPR methods have been also applied in a few cases [58,59], but often requires complementary methods for low NV concentrations.…”

Section: Optimizing Irradiation Fluence For Nv Creationmentioning

confidence: 99%

“…In previous studies, limited ranges of nitrogen concentrations for specific interests have been mostly discussed, for example recently Edmonds et al [31] have investigated CVD diamonds containing ∼10-15 ppm P1 centers and shown the reproducibility of their growth method by studying a large amount of samples; Rubinas et al [32] have studied HPHT diamonds with over ∼0.5-3 ppm P1 concentration range; and earlier Nöbauer et al [33] have presented a study of HPHT diamonds with P1 densities of 200 ppm and CVD diamonds with P1 densities of 1 ppm. In this work, we have grown CVD diamond series with a varying nitrogen flow over 4 orders of magnitude, leading to a broad range of P1 densities from 0.2 to 20 ppm.…”

Section: Introductionmentioning

confidence: 99%

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Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications

Luo,

Lindner,

Langer

et al. 2021

Preprint

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The nitrogen-vacancy (NV) center in diamond is a promising quantum system for magnetometry applications exhibiting optical readout of minute energy shifts in its spin sub-levels. Key material requirements for NV ensembles are a high NV − concentration, a long spin coherence time and a stable charge state. However, these are interdependent and can be difficult to optimize during diamond growth and subsequent NV creation. In this work, we systematically investigate the NV center formation and properties in chemical vapor deposition (CVD) diamond. The nitrogen flow during growth is varied by over 4 orders of magnitude, resulting in a broad range of single substitutional nitrogen concentrations of 0.2-20 parts per million. For a fixed nitrogen concentration, we optimize electron-irradiation fluences with two different accelerated electron energies, and we study defect formation via optical characterizations. We discuss a general approach to determine the optimal irradiation conditions, for which an enhanced NV concentration and an optimum of NV charge states can both be satisfied. We achieve spin-spin coherence times T 2 ranging from 45.5 to 549 µs for CVD diamonds containing 168 to 1 parts per billion NV − centers, respectively. This study shows a pathway to engineer properties of NV-doped CVD diamonds for improved sensitivity.

show abstract

Optimization of the coherence properties of diamond samples with an intermediate concentration of NV centers

Cited by 13 publications

References 22 publications

Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications

Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications

NV– diamond laser

Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications

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