Optimization of Switching Metrics for CMOS Integrated HfO2 based RRAM Devices on 300 mm Wafer Platform

Hazra, Jubin; Liehr, Maximilian; Beckmann, Karsten; Abedin, Minhaz; Rafq, Sarah; Cady, Nathaniel C.

doi:10.1109/imw51353.2021.9439618

Cited by 14 publications

(6 citation statements)

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“…28,29,36 However, inorganic materials require high-vacuum techniques to produce such notable features. The most common methods are atomic layer deposition (ALD), 37 RF sputtering, 38 thermal evaporation, pulsed laser deposition (PLD), and e-beam evaporation. 39,40 In addition, these techniques are only applicable when a compressed target is available, so these are not suitable for solution-based materials, particularly organics and nanoparticles.…”

Section: Introductionmentioning

confidence: 99%

“…; , and (3) organic materials such as PEDOT:PSS, PVK, PANI, and carbon-based materials such as graphene oxide (GO) and reduced graphene oxide (rGO). , Until now, inorganic materials, particularly binary oxides, have shown significant characteristics in terms of stability, reproducibility, and CMOS process flow compatibility. ,, However, inorganic materials require high-vacuum techniques to produce such notable features. The most common methods are atomic layer deposition (ALD), RF sputtering, thermal evaporation, pulsed laser deposition (PLD), and e-beam evaporation. , In addition, these techniques are only applicable when a compressed target is available, so these are not suitable for solution-based materials, particularly organics and nanoparticles. Thus, several solution-based techniques are developed to take advantage of organic materials .…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of Graphene Oxide-Based Resistive Switching Memory by the Spray Pyrolysis Technique for Neuromorphic Computing

Moazzeni

Madvar

Hamedi

et al. 2023

ACS Appl. Nano Mater.

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Recently, resistive switching memory (RRAM) has been attractive for implementing electronic synapses in neural networks and high-density memory technology. In this paper, we report a different technique for fabricating an Al/GO/ITO RRAM device with multilevel storage capability. In this work, graphene oxide (GO) thin films have been deposited by the spray pyrolysis technique (SPT) using GO powder synthesized by chemical oxidation of graphite flakes via the modified Hummers method. The fabricated RRAM shows good switching performance between On and Off states with the best memory window of 20 and presents reliable retention characteristics of 10 4 s and 50 reproducible write−read DC cycles without degradation. The multilevel feature points out five stable multiresistant states obtained with the variation of the compliance current (I cc ) and reset voltage amplitude. The successful longterm potentiation and depression with 10 ms pulse operation allows to apply this memory in neuromorphic computing applications in addition to 11 gradual conductance levels achieved by continuous set and reset cycles. A comparison of the efficiency of SPT with that of the typical spin coating method showed a notable (87%) yield achieved by SPT. The combination of the multilevel capacity of fabricated RRAMs with SPT was exploited to suggest that GO-based RRAMs have the potential to be used as multibit GO memristors and electronic synapse devices for emerging neuromorphic chips. In addition, this work paves the way for the fabrication of solution-based, low-cost, simple and large-scale GO memristors for future electronics.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication of Graphene Oxide-Based Resistive Switching Memory by the Spray Pyrolysis Technique for Neuromorphic Computing

Moazzeni

Madvar

Hamedi

et al. 2023

ACS Appl. Nano Mater.

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“…They are usually based on the valance change mechanism (VCM) [38] or electrochemical metallization (ECM) effect [39]. These devices have been successfully scaled down to sub 10 nm dimensions [40], offer high switching speeds down to some nanoseconds and below [41], [42], and have been fabricated using established and industry-relevant CMOS-or back-end-of-line processes (BEOL) [43]- [46]. Very recently, Li et al suggested a novel memristive FPAA for analog computing [47], which was experimentally implemented with 2 µm feature size technology.…”

Section: Introductionmentioning

confidence: 99%

Programmable Mixed-Signal Circuits

Tappertzhofen

2023

Preprint

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A novel concept for programmable mixed-signal circuits is presented based on programmable transmission gates. For implementation, memristively switching devices are suggested as the most promising candidates for realization of fast and small-footprint signal routing switches with small resistance and capacity. As a proof-of-concept, LT Spice simulations of digital and analogue example circuits implemented by the new concept are demonstrated. It is discussed how important design parameters can be tuned in the circuity. Compared to competing technologies such as Field Programmable Analogue Arrays or Application-Specific Integrated Circuits, the presented concept allows for development of ultra-flexible, reconfigurable, and cheap embedded mixed-signal circuits for applications where only limited space is available or high bandwidth is required.

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“…[3][4][5] However, for industrial production, researchers have been focusing more on the improvement of RRAM device structure and performance optimization, but the studies on device storage reliability and decay mechanisms are still insufficient. [6][7][8][9] Temperature is an essential thermodynamic parameter in many aerospace and industrial manufacturing areas. Understanding the effects of temperature on memory devices allows the trade-off between performance and reliability to be better controlled when designing devices, which is essential for preparing memory devices with good performance and high reliability.…”

Section: Introductionmentioning

confidence: 99%

“…[ 3–5 ] However, for industrial production, researchers have been focusing more on the improvement of RRAM device structure and performance optimization, but the studies on device storage reliability and decay mechanisms are still insufficient. [ 6–9 ]…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Electrical Properties and Conduction Mechanism of SiN_x‐Based Resistive Random Access Memory

Bai,

Duan,

Qian

et al. 2023

Physica Status Solidi (a)

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In this letter, the effect of temperature on the switching characteristics and the conduction mechanism of the Ti/SiNx/Pt resistive random access memory device is investigated. The switching behavior of the device is investigated by comparing the I‐V curves of the device in the temperature range of RT‐653 K. The temperature dependence of the current and the conduction mechanism of the device within RT‐463 K is investigated. It is found that the device exhibits good bipolar switching behavior in the temperature range of RT‐463 K, and the LRS current and HRS current show an increasing and then decreasing trend with increasing temperature. There is a stronger temperature dependence of the LRS current and the conduction mechanism from ohmic conduction to Schottky emission under LRS, which is attributed to the involvement of the reactive electrode Ti in the reaction at a certain temperature and the generation of a TiNx layer. Based on the above phenomenon, it is believed that not only the temperature affects the reliability of the device, but also the influence of reactive electrodes cannot be ignored. This paper provides a reference for further preparation of SiNx‐based RRAM devices with higher reliability and wider temperature usage range.This article is protected by copyright. All rights reserved.

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Optimization of Switching Metrics for CMOS Integrated HfO2 based RRAM Devices on 300 mm Wafer Platform

Cited by 14 publications

References 6 publications

Fabrication of Graphene Oxide-Based Resistive Switching Memory by the Spray Pyrolysis Technique for Neuromorphic Computing

Fabrication of Graphene Oxide-Based Resistive Switching Memory by the Spray Pyrolysis Technique for Neuromorphic Computing

Programmable Mixed-Signal Circuits

Temperature Dependence of Electrical Properties and Conduction Mechanism of SiN_x‐Based Resistive Random Access Memory

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Optimization of Switching Metrics for CMOS Integrated HfO2 based RRAM Devices on 300 mm Wafer Platform

Cited by 14 publications

References 6 publications

Fabrication of Graphene Oxide-Based Resistive Switching Memory by the Spray Pyrolysis Technique for Neuromorphic Computing

Fabrication of Graphene Oxide-Based Resistive Switching Memory by the Spray Pyrolysis Technique for Neuromorphic Computing

Programmable Mixed-Signal Circuits

Temperature Dependence of Electrical Properties and Conduction Mechanism of SiNx‐Based Resistive Random Access Memory

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Product

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Temperature Dependence of Electrical Properties and Conduction Mechanism of SiN_x‐Based Resistive Random Access Memory