Optimization of Sidewall Spacer Engineering at Sub-5 nm Technology Node For JL-Nanowire FET: Digital/Analog/RF/Circuit Perspective
Chandana Anguru,
Vamsi Krishna Aryasomayajula,
Venkata Ramakrishna Kotha
et al.
Abstract:This paper presents a performance analysis of 3-stack JL-NWFETs with different spacer materials and spacer lengths. The DC and analog/RF performance is analysed at the device level, and circuit level. In single-k spacer analysis, TiO2 exhibits lowest IOFF of ~89.28%, and largest ION/IOFF ratio with better subthreshold performance of ~42.51% as compared to Air spacer at Lext= 7nm. In addition, TiO2 spacer is suitable for analog applications while Air spacer for RF applications. The dual-k spacer analysis is als… Show more
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