Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation

Hazdra, P.; Popelka, Stanislav; Schöner, Adolf

doi:10.1109/ted.2018.2866763

Cited by 14 publications

(10 citation statements)

References 21 publications

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“…We also performed proton implantation after PiN diode fabrication, and the diodes did not exhibit uniform EL, as shown in Fig. S1 , due to the damage caused by the proton implantation, as reported in previous studies 37 – 39 . Therefore, annealing at 1600 °C after Al ion implantation which is an essential process for device fabrication to activate Al acceptor recovered the damages induced by proton implantation, resulting in similar I-V characteristics between the PiN diodes with and without proton implantation.…”

Section: Resultsmentioning

confidence: 78%

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Kato

Watanabe

Mii

et al. 2022

Sci Rep

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Abstract4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar degradation. This degradation is caused by the expansion of single Shockley stacking-faults (1SSFs) from basal plane dislocations in the 4H-SiC crystal. Here, we present a method for suppressing the 1SSF expansion by proton implantation on a 4H-SiC epitaxial wafer. PiN diodes fabricated on a proton-implanted wafer show current–voltage characteristics similar to those of PiN diodes without proton implantation. In contrast, the expansion of 1SSFs is effectively suppressed in PiN diodes with proton implantation. Therefore, proton implantation into 4H-SiC epitaxial wafers is an effective method for suppressing bipolar degradation in 4H-SiC power-semiconductor devices while maintaining device performance. This result contributes to the development of highly reliable 4H-SiC devices.

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Section: Resultsmentioning

confidence: 78%

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Kato

Watanabe

Mii

et al. 2022

Sci Rep

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show abstract

“…S1, due to the damage caused by the proton implantation, as reported in previous studies. [37][38][39] Therefore, annealing at 1600°C after Al ion implantation which is an essential process for device fabrication to activate Al acceptor recovered the damages induced by proton implantation, resulting in similar I-V characteristics between the PiN diodes with and without proton implantation.…”

Section: Resultsmentioning

confidence: 99%

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Kato

Watanabe

Mii

et al. 2022

Preprint

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4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar degradation. This degradation is caused by the expansion of single Shockley stacking faults (1SSFs) from basal plane dislocations in the 4H-SiC crystal. Here, we present a method for suppressing the 1SSF expansion by proton implantation on a 4H-SiC epitaxial wafer. PiN diodes fabricated on a proton-implanted wafer show current–voltage characteristics similar to those of PiN diodes without proton implantation. In contrast, the expansion of 1SSFs is effectively suppressed in PiN diodes with proton implantation. Therefore, proton implantation into 4H-SiC epitaxial wafers is an effective method for suppressing bipolar degradation in 4H-SiC power-semiconductor devices while maintaining device performance. This result contributes to the development of highly reliable 4H-SiC devices.

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“…Proton irradiation is an excellent tool for local lifetime reduction in SiC since light protons provide long ranges at acceptable acceleration voltages and, in contrast with silicon, produce only pure radiation defects. [ 21 ] An overview of deep levels produced by 800 keV protons in 4 H‐SiC provides Figure , which compares majority carrier DLTS spectra measured prior to and after proton irradiation to fluences of 5 × 10 9 cm −2 and 1 × 10 10 cm −2 , respectively. The spectra were measured under conditions allowing the detection of the entire profile of the introduced damage.…”

Section: Resultsmentioning

confidence: 99%

Radiation Defects and Carrier Lifetime in 4H‐SiC Bipolar Devices

Hazdra

Smrkovský

Popelka

2021

Physica Status Solidi (a)

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The effect of radiation damage on the minority carrier lifetime in the 4 H‐SiC epilayers forming the n‐base of the power p–i–n diodes is presented. Irradiation with fast neutrons and MeV protons is used for uniform and local lifetime reduction. Deep‐level transient spectroscopy in combination with open‐circuit voltage decay measurement shows that the carrier lifetime is reduced by increased carrier recombination on Z1/Z2, EH3, and possibly RD4 levels. The lifetime degrades swiftly and the ON‐state carrier modulation capability of high‐voltage devices can be easily lost already at very low fluences. The results further show that the proton irradiation provides an excellent tool for local lifetime tailoring. The carrier lifetime can be easily set by proton fluence and localized by proton energy. The proper local lifetime reduction speeds up diode recovery without an undesirable increase in the forward voltage drop. However, attention must be taken to properly locate the damage maximum so as not to increase device leakage.

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Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation

Cited by 14 publications

References 21 publications

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Radiation Defects and Carrier Lifetime in 4H‐SiC Bipolar Devices

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