Optimization of mica surface hydroxylation in water vapor plasma monitored by optical emission spectroscopy

Rupper, Patrick; Amberg, Michel; Hegemann, Dirk; Heuberger, Manfred

doi:10.1016/j.apsusc.2020.145362

Cited by 21 publications

(6 citation statements)

References 81 publications

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“…In contrast, during the PEALD process, these gases can be ionized leading to other complex reactions. All the oxidant agents, except for water in TALD, feature the same background signal increase; their particular peaksthe masses 28 and 44correspond to CO and CO 2 , which is expected for combustion-like reactions. ,, In the PEALD process, overlap of different byproduct masses is observed, complicating the understanding of the reaction mechanism involved. , The QMS revealed that water plasma is the highest reactive oxidant since the masses 1, 2, 16, 17, 18, and 32 are corresponding to the radicals H + , H 2 + , O + , OH + , H 2 O + , and O 2 + , , supporting the hypothesis about simultaneous thermal and plasma contributions during the film growth. In the case of TALD, atomic hydrogen, oxygen, and molecular oxygen peaks are of low intensity; if oxygen and ozone are used as oxidation agents, the contributions of O, O 2 , and O 3 can be clearly distinguished.…”

Section: Resultsmentioning

confidence: 93%

Unintentional Hydrogen Incorporation into the SnO₂ Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

Martínez-Puente

Tirado

Jaramillo

et al. 2021

ACS Appl. Energy Mater.

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This work reports the influence of atomic layer deposition (ALD) using its variants as thermal ALD, remote plasma ALD (RPALD), and direct plasma ALD on the physical parameters of the as-deposited SnO x films. The deposition process and chemical composition are related to their electronic band structure such as valence band maximum, conduction band minimum, band gap, and work function. Oxidant agents such as H 2 O, O 2 , and O 3 were evaluated with deposition temperatures of 80 and 200 °C. Each of the SnO x films were integrated into a solar cell prototype as an electron transport layer, yielding the maximum photovoltaic efficiency of 15.15% for the cell using the SnO x film obtained with oxygen-assisted RPALD at 80 °C. Tin oxides deposited at 200 °C using ozone and oxygen, respectively, feature surface plasmon resonance (SPR) under near-infrared irradiation (0.5 eV), which was detected by reflection electron energy loss and X-ray photoelectron spectroscopies. The unintentionally incorporated substitutional hydrogen acting as a shallow donor is responsible for the SPR effect, defect states in the band gap, and considerably reducing photovoltaic efficiency of the solar cells studied. This doping can be detected by in situ quadrupole mass spectroscopy characterization in the absence of CH 2 among reaction byproducts at the ALD oxidation step.

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Section: Resultsmentioning

confidence: 93%

Unintentional Hydrogen Incorporation into the SnO₂ Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

Martínez-Puente

Tirado

Jaramillo

et al. 2021

ACS Appl. Energy Mater.

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“…Figure 4 A,B depict the corresponding high-resolution scans for Al 2p and Ag 3d. Aluminum bonds involving oxygen (oxides Al 2 O 3 ; hydroxides AlOOH, Al(OH) 3 ) and aluminum ions present in alumino-silicate minerals all possess similar binding energies for Al 2p between 74.5 eV and 76 eV [ 24 , 25 , 26 , 27 ]. Therefore, they cannot be clearly resolved and have been fitted together as one component.…”

Section: Resultsmentioning

confidence: 99%

Metal-Modified Montmorillonite as Plasmonic Microstructure for Direct Protein Detection

Giovannini

Garoli

Rupper

et al. 2021

Sensors

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Thanks to its negative surface charge and high swelling behavior, montmorillonite (MMT) has been widely used to design hybrid materials for applications in metal ion adsorption, drug delivery, or antibacterial substrates. The changes in photophysical and photochemical properties observed when fluorophores interact with MMT make these hybrid materials attractive for designing novel optical sensors. Sensor technology is making huge strides forward, achieving high sensitivity and selectivity, but the fabrication of the sensing platform is often time-consuming and requires expensive chemicals and facilities. Here, we synthesized metal-modified MMT particles suitable for the bio-sensing of self-fluorescent biomolecules. The fluorescent enhancement achieved by combining clay minerals and plasmonic effect was exploited to improve the sensitivity of the fluorescence-based detection mechanism. As proof of concept, we showed that the signal of fluorescein isothiocyanate can be harvested by a factor of 60 using silver-modified MMT, while bovine serum albumin was successfully detected at 1.9 µg/mL. Furthermore, we demonstrated the versatility of the proposed hybrid materials by exploiting their plasmonic properties to develop liquid label-free detection systems. Our results on the signal enhancement achieved using metal-modified MMT will allow the development of highly sensitive, easily fabricated, and cost-efficient fluorescent- and plasmonic-based detection methods for biomolecules.

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“…UV‐ozone 24 and H 2 O plasma 25 are well known to remove organic contamination adsorbed on the material surface. H 2 O plasma is also known to increase Si–OH 26–28 . UV‐ozone treatment was performed for 10 min by a commercially available equipment (PL17‐110, SEN LIGHTS CORP.).…”

Section: Methodsmentioning

confidence: 99%

Low‐temperature bonding of glasses: The role of plasma‐engrafted surface amino groups

Nagai,

Nakao,

Hayashi

et al. 2024

J Am Ceram Soc.

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Low‐temperature (<∼200°C) bonding of glasses is a key technology for utilizing them for microfluidics, optical applications, and microelectromechanical systems. In the present study, bonding strength of SiO2 glasses was examined for those after several surface treatment methods. As a result, it was found that two‐step (H2O→ NH3) plasma treatment remarkably strengthened the bonding strength (>1 J/m2) at the annealing temperature of 150°C. The improvement was achieved even when only one side of the bonded surfaces was plasma‐treated. X‐ray photoelectron spectroscopy revealed that the two‐step plasma treatment generated Si–NH2 groups on the topmost surface. Upon the annealing (<200°C), the engrafted Si–NH2 was desorbed from the bonded interface, indicating that the Si–NH2 effectively reacted with Si–OH on the other side to form Si–O–Si covalent bonds. This study contributes to understanding of the role of surface functional groups for bonding reaction. Furthermore, the method proposed here would be promising as a production technology because it enables glass bonding at lower temperatures with a simple plasma system.

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Optimization of mica surface hydroxylation in water vapor plasma monitored by optical emission spectroscopy

Cited by 21 publications

References 81 publications

Unintentional Hydrogen Incorporation into the SnO₂ Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

Unintentional Hydrogen Incorporation into the SnO₂ Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

Metal-Modified Montmorillonite as Plasmonic Microstructure for Direct Protein Detection

Low‐temperature bonding of glasses: The role of plasma‐engrafted surface amino groups

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Optimization of mica surface hydroxylation in water vapor plasma monitored by optical emission spectroscopy

Cited by 21 publications

References 81 publications

Unintentional Hydrogen Incorporation into the SnO2 Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

Unintentional Hydrogen Incorporation into the SnO2 Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

Metal-Modified Montmorillonite as Plasmonic Microstructure for Direct Protein Detection

Low‐temperature bonding of glasses: The role of plasma‐engrafted surface amino groups

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Product

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Unintentional Hydrogen Incorporation into the SnO₂ Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

Unintentional Hydrogen Incorporation into the SnO₂ Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure