Optimization of ink-jet printed precursors for Cu2ZnSn(S,Se)4 solar cells

Colina, M.; Bailo, Eduard; Medina-Rodriguez, B.; Kondrotas, Rokas; Sánchez, Yudania; Sylla, Diouldé; Placidi, Marcel; Blanes, Mireia; Ramos, F. Javier; Cirera, A.; Pérez-Rodrı́guez, A.; Saucedo, Edgardo

doi:10.1016/j.jallcom.2017.12.035

Cited by 16 publications

(12 citation statements)

References 23 publications

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“…By using mixed solvents such as 1,2‐ethanedithiol, 1,2‐ethylenediamine, thioglycolic acid, and ethanolamine to dissolve the elemental component, metal oxide, or metal sulfide is also an effective route to CZTSSe solar cells with PCEs of around 10 % . Another common route is to use dimethyl sulfoxide (DMSO) as the solvent for the Cu‐Zn‐Sn‐S ink formulation, which was reported for the first time by the Hillhouse group and has been adopted by many groups . The highest PCE for DMSO‐based CZTSSe devices is 11.8 % as reported by Xin et al.…”

Section: Introductionmentioning

confidence: 99%

Improvement of Cu₂ZnSn(S,Se)₄ Solar Cells by Adding N,N‐Dimethylformamide to the Dimethyl Sulfoxide‐Based Precursor Ink

Gao

Hong

et al. 2019

ChemSusChem

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Cu2ZnSn(S,Se)4 (CZTSSe) solar cells based on dimethyl sulfoxide (DMSO) Cu‐Zn‐Sn‐S precursor ink have seen tremendous progress in recent years. However, the wettability between the ink and Mo substrate is poor, owing to the high viscosity of the highly concentrated Cu‐Zn‐Sn‐S ink. Herein, a solvent engineering process is proposed in which N,N‐dimethylformamide (DMF) is added into the DMSO‐based Cu‐Zn‐Sn‐S ink for the deposition of CZTSSe thin‐film absorbers in air. The addition of DMF significantly improves the wettability between the precursor ink and Mo substrate. The DMF/(DMF+DMSO) ratio also plays a critical role in determining the crystal quality of the resulting CZTSSe absorber and the device performance. The grain size of CZTSSe thin films increases with increasing DMF/(DMF+DMSO) ratio. Particularly, large grains through the whole cross section can be achieved with 20 % DMF addition. Accordingly, the power conversion efficiency of the device increases from 6.5 % to 8.6 % under AM 1.5G illumination. However, the efficiency decreases to 5.4 % when the DMF content is further increased to 30 %. Interface recombination and back contact barrier are found to be the main limitations of these devices.

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Section: Introductionmentioning

confidence: 99%

Improvement of Cu₂ZnSn(S,Se)₄ Solar Cells by Adding N,N‐Dimethylformamide to the Dimethyl Sulfoxide‐Based Precursor Ink

Gao

Hong

et al. 2019

ChemSusChem

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“…Apart from that, kesterite has several advantageous properties to be a very suitable material for photovoltaic applications: kesterite has p‐type conductivity naturally due to intrinsic point defects; it is direct band gap semiconductor with a high absorption coefficient (~10 4 cm −1 ); its band gap can be easily tuned with the ratio S/Se, from 1.0 eV, for the pure selenium Cu 2 ZnSnSe 4 (CZTSe) compound, to 1.5 eV, for the pure sulfur Cu 2 ZnSnS 4 (CZTS); and it is highly compatible with CIGS technology, sharing several processing steps and techniques. Furthermore, the fact that kesterite absorbers can be synthesized with a large variety of techniques is another advantage to consider, especially for future industrial perspectives …”

Section: Introductionmentioning

confidence: 99%

“…Vacuum‐based methods include coevaporation, thermal evaporation, e‐beam evaporation, sputtering, or pulsed laser deposition (PLD), among the most widely used. While nonvacuum techniques include solution processing via spin‐coating/dip‐coating/doctor‐blade‐coating/spray/ink‐jet printing of the precursor, or electrochemical deposition …”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, the fact that kesterite absorbers can be synthesized with a large variety of techniques is another advantage to consider, especially for future industrial perspectives. [8][9][10][11][12][13][14][15][16][17][18] Regarding the deposition techniques, these are usually classified as vacuum (mostly physical vapor deposition [PVD]-based) and nonvacuum techniques.…”

mentioning

confidence: 99%

“…Vacuum-based methods include coevaporation, 8 thermal evaporation, 9 e-beam evaporation, 10 sputtering, 11 or pulsed laser deposition (PLD), 12 among the most widely used. While nonvacuum techniques include solution processing via spin-coating 13 /dip-coating 14 /doctor-blade-coating 15 /spray 16,17 / ink-jet printing of the precursor, 18 or electrochemical deposition. 19 Currently, the certified highest efficiency (12.6%) has been achieved using hydrazine-based solution approach, 20 although the wide variety of deposition techniques, like coevaporation, 8,21 sputtering, 11,[22][23][24][25] spray, 26 spin-coating, 27,28 or doctor-blade coating, 29 have also given efficiencies above 10%.…”

mentioning

confidence: 99%

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Study and optimization of alternative MBE‐deposited metallic precursors for highly efficient kesterite CZTSe:Ge solar cells

Giraldo

Kim

Andrade‐Arvizu

et al. 2019

Progress in Photovoltaics

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Nowadays, most of the best efficiencies of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells are obtained from absorber layers fabricated using sequential processes, including the deposition of metallic stack precursors, typically by sputtering, and followed by reactive annealing under chalcogen atmosphere. The sputtering technique is widely known for the easy growth of metallic layers, although the deposition rates, growth morphology and nucleation, or the roughness can sometimes be an issue leading to inhomogeneities in the final layers. Nevertheless, MBE (molecular beam epitaxy) technique could have some advantages to obtain high‐quality metallic layers, with accurate control of the growth due to ultra‐high vacuum conditions and high purity. In this work, we study the use of advanced MBE systems to grow metallic stack precursors, alternatively to sputtering or thermal evaporation techniques, to obtain high‐quality CZTSe:Ge absorbers. Due to differences in the nature of each type of precursor, thermal annealing optimizations are presented by modifying some critical selenization parameters, such as the temperature or the selenium amount in order to obtain well‐crystallized absorbers. Detailed morphological, compositional, and structural characterizations show relevant features of each precursor, mainly related to the formation of MoSe2 at the back interface, and Se and Sn composition after selenization in different conditions. Regarding the solar cell devices, main efficiency limitations come from VOC and FF, which could be tentatively related to a noncontrolled selenization; different precursor reactivity, porosity, or composition; and different alkali diffusion during the reactive annealing. Finally, in the first optimization, a 9.2% efficiency device has been achieved with promising perspectives for future improvements.

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3D Printing Technology Toward State‐Of‐The‐Art Photoelectric Devices

Zhang

Chang

et al. 2022

Adv Materials Technologies

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Photoelectric devices and components, as indispensable and increasingly significant technologies, are widely applied in energy conversion, electrocommunication, environmental detection, and so on. The rapid and accurate fabrication of optoelectronic devices and components brings severe challenges to the traditional preparation approaches. As a revolutionary emerging technology, 3D printing has unique advantages in geometric shape design and rapid prototyping in comparison with traditional manufacturing methods. Furthermore, it possesses excellent flexibility for fabrication methods and materials. To satisfy the fast‐expanding market of optoelectronic devices, the research in this field is showing an explosion of growth for 3D printing. However, systematic analysis and summary are still bleak about 3D printing in the photoelectric field despite abundant individual reports being presented. In order to point out its development status and forecast the future research direction, the relevant reports are summarized. Four categories of photoelectric devices are chosen as representative, including solar concentrators, solar cells, light emitting diodes, and photodetectors. In this article, the development and latest progress of 3D printing photoelectric devices are summarized as well as critical analyses of the challenges and opportunities are presented.

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Optimization of ink-jet printed precursors for Cu2ZnSn(S,Se)4 solar cells

Cited by 16 publications

References 23 publications

Improvement of Cu₂ZnSn(S,Se)₄ Solar Cells by Adding N,N‐Dimethylformamide to the Dimethyl Sulfoxide‐Based Precursor Ink

Improvement of Cu₂ZnSn(S,Se)₄ Solar Cells by Adding N,N‐Dimethylformamide to the Dimethyl Sulfoxide‐Based Precursor Ink

Study and optimization of alternative MBE‐deposited metallic precursors for highly efficient kesterite CZTSe:Ge solar cells

3D Printing Technology Toward State‐Of‐The‐Art Photoelectric Devices

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Optimization of ink-jet printed precursors for Cu2ZnSn(S,Se)4 solar cells

Cited by 16 publications

References 23 publications

Improvement of Cu2ZnSn(S,Se)4 Solar Cells by Adding N,N‐Dimethylformamide to the Dimethyl Sulfoxide‐Based Precursor Ink

Improvement of Cu2ZnSn(S,Se)4 Solar Cells by Adding N,N‐Dimethylformamide to the Dimethyl Sulfoxide‐Based Precursor Ink

Study and optimization of alternative MBE‐deposited metallic precursors for highly efficient kesterite CZTSe:Ge solar cells

3D Printing Technology Toward State‐Of‐The‐Art Photoelectric Devices

Contact Info

Product

Resources

About

Improvement of Cu₂ZnSn(S,Se)₄ Solar Cells by Adding N,N‐Dimethylformamide to the Dimethyl Sulfoxide‐Based Precursor Ink

Improvement of Cu₂ZnSn(S,Se)₄ Solar Cells by Adding N,N‐Dimethylformamide to the Dimethyl Sulfoxide‐Based Precursor Ink