Optimization of H2 thermal annealing process for the fabrication of ultra-low loss sub-micron silicon-on-insulator rib waveguides

Bellegarde, Cyril; Pargon, E.; Sciancalepore, Corrado; Petit-Etienne, C.; Hartmann, Jean‐Michel; Lyan, Philippe; Lemonnier, Olivier; Ribaud, Karen; Reed, Graham T.; Knights, Andrew P.

doi:10.1117/12.2289564

Cited by 4 publications

(3 citation statements)

References 9 publications

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“…In previous publications [18], [19], we reported that the introduction of a high-temperature hydrogen annealing (> 800 ° C) after the silicon waveguide etching was particularly effective to decrease the silicon sidewalls roughness and consequently reduce the optical losses. However, this annealing leads also to a pattern deformation which depends on the shape of the guide and the interfaces.…”

Section: Ultra-low Loss Silicon Photonics Circuits For Quantum Applicationsmentioning

confidence: 95%

Technological advances on Si and Si3N4 low-loss waveguide platforms for nonlinear and quantum optics applications

Bellegarde

Dirani

Letartre

et al. 2019

Advances in Photonics of Quantum Computing, Memory, and Communication XII

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In this communication, we report on the design, fabrication, and testing of silicon-on-insulator (SOI) and silicon-nitrideon-insulator (SiNOI) photonic circuits for nonlinear and quantum optics applications. As recently demonstrated, the generation of correlated photons on Si platforms can be used for quantum cryptography and quantum computing. Concerning SiNOI waveguides, Kerr frequency combs have been proposed in many applications, such as atomic clocks, on-chip spectroscopy, and terabit coherent communications. Silicon is an attractive platforms for correlated photons sources because of its high nonlinearity, they can have several modes in telecom band with sharp line widths (tens of µeV) and its inherent complementary metal-oxide-semiconductor (CMOS) compatibility. Moreover, the SiNOI is an attractive platform for Kerr comb generation due to their large bandgap and consequently the low two-photon absorption in the telecommunication band. Furthermore, in all the previous SiNOI-based frequency combs, the silicon nitride film undergoes long and high-temperature annealing to reduce the absorption in the telecommunication band caused by the dangling N-H bonds, thus making such annealed Si 3 N 4 films non-CMOS compatible. However, both in the case of correlated photons pairs generation and Kerr frequency combs, the source efficiency is related to the quality factor (Q), so that a high-Q resonator is required to get highly-efficient sources. Authors report here about the fabrication and the characterization of annealing-free CMOS-compatible SiNOI-and hydrogen-annealed silicon-based waveguides and microresonators featuring ultra-low losses (e.g., 0.6 dB/cm for single-mode Si waveguides) that can be used, respectively, as efficient sources for Kerr combs and correlated photon pairs sources.

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Section: Ultra-low Loss Silicon Photonics Circuits For Quantum Applicationsmentioning

confidence: 95%

Technological advances on Si and Si3N4 low-loss waveguide platforms for nonlinear and quantum optics applications

Bellegarde

Dirani

Letartre

et al. 2019

Advances in Photonics of Quantum Computing, Memory, and Communication XII

Self Cite

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“…Ideally, the electric field should be maintained between 1 × 10 4 and 2 × 10 5 V/cm. If too high, it causes the Ge layer to multiply and produce excess noise; if too low, it affects the drift of photogenerated carriers in silicon at the saturation rate [36,37] . The 0.2 μm wide multiplication region is located between the Pul (P-type ultra-low doping) charge layer and the P-type doped region.…”

Section: Design and Fabricationmentioning

confidence: 99%

A peak enhancement of frequency response of waveguide integrated silicon-based germanium avalanche photodetector

Yi,

Liu,

Cheng

et al. 2024

J. Semicond.

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Avalanche photodetectors (APDs) featuring an avalanche multiplication region are vital for reaching high sensitivity and responsivity in optical transceivers. Waveguide-coupled Ge-on-Si separate absorption, charge, and multiplication (SACM) APDs are popular due to their straightforward fabrication process, low optical propagation loss, and high detection sensitivity in optical communications. This paper introduces a lateral SACM Ge-on-Si APD on a silicon-on-insulator (SOI) wafer, featuring a 10 μm-long, 0.5 μm-wide Ge layer at 1310 nm on a standard 8-inch silicon photonics platform. The dark current measures approximately 38.6 μA at −21 V, indicating a breakdown voltage greater than −21 V for the device. The APDs exhibit a unit-gain responsivity of 0.5 A/W at −10 V. At −15 V, their responsivity reaches 2.98 and 2.91 A/W with input powers of −10 and −25 dBm, respectively. The device's 3-dB bandwidth is 15 GHz with an input power of −15 dBm and a gain is 11.68. Experimental results show a peak in impedance at high bias voltages, attributed to inductor and capacitor (LC) circuit resonance, enhancing frequency response. Furthermore, 20 Gbps eye diagrams at −21 V and −9 dBm input power reveal signal to noise ratio (SNRs) of 5.30. This lateral SACM APD, compatible with the stand complementary metal oxide semiconductor (CMOS) process, shows that utilizing the peaking effect at low optical power increases bandwidth.

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“…The nominal width of the channel waveguide was designed to be 450 nm to support the single mode [17,25]. As shown in Figure 1b, the curved sidewall of the waveguide was caused by high-temperature annealing under hydrogen ambient conditions, which were developed to reduce the scattering loss [26,27]. Then, the grating was formed by a 220 nm-deep dry etching.…”

Section: Design and Fabricationmentioning

confidence: 99%

Waveguide-Integrated Ge/Si Avalanche Photodiode with Vertical Multiplication Region for 1310 nm Detection

Liu

et al. 2023

Photonics

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Ge/Si separate absorption, charge, and multiplication avalanche photodiodes (SACM APDs) coupled with waveguides have shown significant potential as high-sensitivity, low-noise, and high-speed photodetectors for optical communications. In this study, we present a waveguide-integrated Ge/Si SACM APD fabricated on an eight-inch silicon photonics platform. The device exhibits a primary responsivity of 0.68 A/W at the unit gain voltage of 6 V for the O-band (1310 nm) wavelength, with a 10 μm-long and 1 μm-wide Ge layer. Additionally, the device demonstrates a 3 dB bandwidth of 25.7 GHz, with an input optical power of −16.8 dBm. The largest gain bandwidth product (GBP) is 247 GHz at a gain of 9.64 and a bias voltage of 15.7 V. The eye diagram is open at the bias voltage of 16 V, with a capacity to receive 28 Gbps of data. This APD shows potential for application in high-speed data transmission systems.

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Optimization of H2 thermal annealing process for the fabrication of ultra-low loss sub-micron silicon-on-insulator rib waveguides

Cited by 4 publications

References 9 publications

Technological advances on Si and Si3N4 low-loss waveguide platforms for nonlinear and quantum optics applications

Technological advances on Si and Si3N4 low-loss waveguide platforms for nonlinear and quantum optics applications

A peak enhancement of frequency response of waveguide integrated silicon-based germanium avalanche photodetector

Waveguide-Integrated Ge/Si Avalanche Photodiode with Vertical Multiplication Region for 1310 nm Detection

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