2022
DOI: 10.1016/j.optlastec.2022.108470
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Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

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Cited by 9 publications
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“…This composite tunneling effect is related to the diffusion and recombination of carriers, which mainly occurs in the diodes of wide forbidden materials. 41 In region III (V 4 2.1 V), the curve presents a power relationship and follows the I-V b equation. Carrier transport is mainly affected by space charge limited current (SCLC) conduction.…”
Section: B-ga 2 O 3 /N-gan Heterojunctionsmentioning
confidence: 99%
“…This composite tunneling effect is related to the diffusion and recombination of carriers, which mainly occurs in the diodes of wide forbidden materials. 41 In region III (V 4 2.1 V), the curve presents a power relationship and follows the I-V b equation. Carrier transport is mainly affected by space charge limited current (SCLC) conduction.…”
Section: B-ga 2 O 3 /N-gan Heterojunctionsmentioning
confidence: 99%