Abstract:This paper investigates the simulation, response surface modeling, and optimization of the metalorganic chemical vapor deposition (MOCVD) process for the deposition of gallium nitride (GaN). Trimethylgallium (TMGa) and ammonia (NH 3 ) are the precursors carried by hydrogen into the rotating-disk reactor. The deposition rate of GaN film and its uniformity form the focus of this study. Computational fluid dynamics (CFD) model simulates the deposition of the GaN film. CFD model is employed to identify two design … Show more
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