Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation

Knauer, A.; Bugge, F.; Erbert, G.; Wenzel, H.; Vogel, Klaus; Zeimer, U.; Meyers, Mark M.

doi:10.1007/s11664-000-0094-4

Cited by 18 publications

(9 citation statements)

References 7 publications

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“…Increasing the wavelength further leads to values around 120 K. The active region of the lasers emitting near 630 nm consists of a tensile-strained SQW. As it is known, a careful optimization of the thickness and the strain of tensilestrained active regions can lead to a significant reduction of the threshold current [14,15]. A comparison of the laser data for QWs emitting near 630 nm having thicknesses d between 8 and 15 nm is given in Table 1.…”

Section: Resultsmentioning

confidence: 99%

High-power red laser diodes grown by MOVPE

Zorn

Wenzel

Zeimer

et al. 2007

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

High-power red laser diodes grown by MOVPE

Zorn

Wenzel

Zeimer

et al. 2007

Journal of Crystal Growth

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“…For the analysis of the system the PL signal intensity per pixel at the CCD camera must be found by considering each component of the system in turn. The number of electrons per pixel at the CCD camera is given by (1) where is the quantum efficiency of the CCD detector chip, is the area of the CCD imaging array, is the area of one CCD pixel, is the sample area imaged onto the CCD array, is the transmission efficiency of the optical system, is the exposure time, is the horizontal binning factor of the CCD pixels, is the vertical binning factor of the CCD pixels, is the total photon density collected by a lens with a given numerical aperture (NA), and the final factor in (1) represents the maximum PL efficiency taking into account the width of the tunable filter.…”

Section: System Designmentioning

confidence: 99%

“…Equations (5) and (7) give the two main terms required for the calculation of the number of electrons per pixel on the CCD camera as given by (1). Using these expressions, calculations were carried out to determine the expected signal strengths with the various filter designs available.…”

Section: System Designmentioning

confidence: 99%

A Spectroscopically Resolved Photo- and Electroluminescence Microscopy Technique for the Study of High-Power and High-Brightness Laser Diodes

Bull

Andrianov

Harrison

et al. 2005

IEEE Trans. Instrum. Meas.

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Abstract-A novel and advanced characterization technique is described for performing optical studies of the luminescence properties of materials. It was developed for the investigation of semiconductor materials, including semiconductor laser diodes and photonic integrated circuits. A quantitatively calibrated, spatially and spectrally resolved imaging technique is described, which is based upon the technologies of photoluminescence microscopy and photoluminescence spectroscopy. The principles of the spectroscopically resolved photo-and electroluminescence microscopy techniques are outlined in this paper, and the developed instrument is described in detail. Design calculations used to select and set up the experimental apparatus are presented, and results are found to compare well with this analysis. Various experimental measurements are used to demonstrate the performance of the new instrument. The study of strain and defects in high-power laser diodes is presented as one of the more challenging applications of the new technique. The results presented demonstrate the ability of this technique to image photoluminescence shifts occurring in the substrate of packaged laser bars, enabling the investigation of strain, defects and their evolution with aging. Other applications of the technique include the spectroscopic measurement of near-and far-field patterns and virtual sources of laser diodes, investigations of spectral hole burning and optical scattering processes in lasers and photonic integrated circuits, and studies of organic LEDs. In the future, applications are also envisaged in medicine and the biological sciences.Index Terms-Electroluminescence microscopy, high-brightness laser diodes, high-power laser diodes, photoluminescence microscopy, quantitative imaging, spectroscopic imaging.

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“…A very important parameter influencing COD behavior is the status of the facet surface 11,12,15 , since surface carrier recombination is one of the major sources for facet heating 16 . Consequently there have been made various attempts at decreasing either the recombination velocity 17,18 or the carrier density close to the laser facets [18][19][20][21] . The other main effect responsible for triggering COD is reabsorption of stimulated emission.…”

Section: Introductionmentioning

confidence: 99%

High power DFB laser diodes

2010

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We present a new design that reduces the far field angles and increases the threshold for catastrophic optical damage of distributed feedback lasers with lateral gratings. The layer structure consists of an asymmetric large optical cavity where the active region is located very close to the upper cladding layer. The position and large refractive index of the active region results in a mode profile that is suitable for good coupling to the lateral grating. A large mode diameter on the facets is achieved by tapering the ridge from its original width to sub-micron dimensions close to the facets. This taper pushes the optical mode down into the core of the large optical cavity, leading to an increase of the mode diameter. The concept is fully compatible with standard facet coating and passivation processes. We present 980 nm laser diodes based on this concept with 5.2° and 13° full-width half-maximum of the farfield and catastrophic optical damage thresholds of 1.6 W.

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Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation

Cited by 18 publications

References 7 publications

High-power red laser diodes grown by MOVPE

High-power red laser diodes grown by MOVPE

A Spectroscopically Resolved Photo- and Electroluminescence Microscopy Technique for the Study of High-Power and High-Brightness Laser Diodes

High power DFB laser diodes

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